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Ichiro Tsukada

Ichiro Tsukada contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2013arXiv

Enhancement of the Superconducting Transition Temperature in FeSe Epitaxial Thin Films by Anisotropic Compression

In order to investigate the effects of in-plane strain on the superconductivity of FeSe, epitaxial thin films of FeSe were fabricated on CaF$_2$ substrates. The films are compressed along the a-axis and their superconducting transition temperatures $T_{\mathrm c}^{\mathrm {zero}}$ reach 11.4 K, which is approximately 1.5 times higher than that of bulk crystals. The $T_{\mathrm c}$ values are weakly dependent on the ratio of the lattice constants, $c$ / $a$, compared to that of Fe(Se,Te). Our results indicate that even a binary system FeSe has room for improvement, and will open a new route for the application of Fe-based superconductors.

preprint2013arXiv

Intrinsic pinning and the critical current scaling of clean epitaxial Fe(Se,Te) thin films

We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was observed (74.1 T/K), leading to a very short out-of-plane coherence length, ξc, of 0.2 nm, yielding 2ξc(0) approximately 0.4 nm. This value is shorter than the interlayer distance (0.605 nm) between Fe-Se(Te) planes, indicative of modulation of the superconducting order parameter along the c-axis. An inverse correlation between the power law exponent N of the electric field-current density (E-J) curve and the critical current density, Jc, has been observed at 4 K, when the orientation of H was close to the ab-plane. These results prove the presence of intrinsic pinning in Fe(Se,Te). A successful scaling of the angular dependent Jc and the corresponding exponent N can be realized by the anisotropic Ginzburg Landau approach with appropriate Γvalues 2~3.5. The temperature dependence of Γbehaves almost identically to that of the penetration depth anisotropy.

preprint2012arXiv

Superconducting Fluctuation investigated by THz Conductivity of La$_{2-x}$Sr$_x$CuO$_4$ Thin Films

Frequency-dependent terahertz conductivities of La$_{2-x}$Sr$_x$CuO$_4$ thin films with various carrier concentrations were investigated. The imaginary part of the complex conductivity considerably increased from far above a zero-resistance superconducting transition temperature, $T_\text{c}^\text{zero}$, because of the existence of the fluctuating superfluid density with a short lifetime. The onset temperature of the superconducting fluctuation is at most $\sim 2T_\text{c}^\text{zero}$ for underdoped samples, which is consistent with the previously reported analysis of microwave conductivity. The superconducting fluctuation was not enhanced under a 0.5 T magnetic field. We also found that the temperature dependence of the superconducting fluctuation was sensitive to the carrier concentration of La$_{2-x}$Sr$_x$CuO$_4$, which reflects the difference in the nature of the critical dynamics near the superconducting transition temperature. Our results suggest that the onset temperature of the Nernst signal is not related to the superconducting fluctuation we argued in this paper.

preprint2012arXiv

Superconductivity at 5.4 K in $β$-Bi$_2$Pd

We investigate bulk superconductivity in a high-quality single crystal of Bi$_2$Pd ($β$-Bi$_2$Pd, space group; I4/mmm) at temperatures less than 5.4 K by exploring its electrical resistivity, magnetic susceptibility, and specific heat. The temperature dependence of the electrical resistivity shows convex-upward behaviors at temperatures greater than 40-50 K, which can be explained by a parallel-resistor model. In addition, we demonstrate that this material is a multiple-band/multiple-gap superconductor based on the temperature dependences of the specific heat and the upper critical field.

preprint2011arXiv

Anomalous Temperature Dependence of the Superfluid Density Caused by Dirty-to-Clean Crossover in FeSe$_{0.4}$Te$_{0.6}$ Single Crystals

We report microwave surface impedances of FeSe$_{0.4}$Te$_{0.6}$ single crystals measured at 12, 19, and 44 GHz. The penetration depth exhibits a power law behavior, $δλ_L=λ_L (T)-λ_L (0) \propto CT^n$ with an exponent $n\simeq 2$, which is considered to result from impurity scattering. This behavior is consistent with $s\pm$-wave pairing symmetry. The temperature dependence of the superfluid density largely deviates from the behavior expected in the BCS theory. We believe that this deviation is caused by the crossover from the dirty regime near $T_c$ to the clean regime at low temperatures, which is supported by the rapid increase of the quasiparticle scattering time obtained from the microwave conductivity. We also believe that the previously published data of the superfluid density can be interpreted in this scenario.

preprint2010arXiv

Systematic Comparison of Eight Substrates in the Growth of FeSe$_{0.5}$Te$_{0.5}$ Superconducting Thin Films

We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the degree of in-plane orientation and with the lattice parameter ratio $c/a$. The best superconducting properties were observed in films on MgO and LaAlO$_3$ ($T_\mathrm{c}^\mathrm{zero}$ of 9.5 K). TEM observation showed that the presence or absence of an amorphous-like layer at the substrate surface plays a key role in determining the structural and superconducting properties of the grown films.

preprint2009arXiv

Superconductivity of FeSe0.5Te0.5 Thin Films Grown by Pulsed Laser Deposition

FeSe0.5Te0.5 thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO4(001) substrates from FeSe0.5Te0.5 or FeSe0.5Te0.75 polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO substrate (film thickness ~ 55 nm) shows superconductivity at 10.6 K (onset) and 9.2 K (zero resistivity). On the other hand, the film deposited on the LaSrAlO4 substrate (film thickness ~ 250 nm) exhibits superconductivity at 5.4 K (onset) and 2.7 K (zero resistivity). This suggests the strong influence of substrate materials and/or the c-axis length to superconducting properties of FeSe0.5Te0.5 thin films.