BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Arindam Ghosh

Arindam Ghosh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.othereess.ASgr-qcMachine Learningmath.RANetworking and Internet Architecturephysics.app-phphysics.opticsquant-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
16works
0followers
12topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

16 published item(s)

preprint2023arXiv

Some generalized Jordan maps on triangular rings force additivity

In this paper, we show that a map $δ$ over a triangular ring $\mathcal{T}$ satisfying $δ(ab+ba)=δ(a)b+a τ(b)+δ(b)a+bτ(a)$, for all $a,b\in \mathcal{T}$ and for some maps $τ$ over $\mathcal{T}$ satisfying $τ(ab+ba)=τ(a)b+a τ(b)+τ(b)a+bτ(a)$, is additive. Also, it is shown that a map $T$ on $\mathcal{T}$ satisfying $T(ab)=T(a)b=aT(b)$, for all $a,b\in \mathcal{T}$, is additive. Further, we establish that if a map $D$ over $\mathcal{T}$ satisfies $(m+n)D(ab)=2mD(a)b+2naD(b)$, for all $a,b\in \mathcal{T}$ and integers $m,n\geq 1$, then $D$ is additive.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Low-resource Low-footprint Wake-word Detection using Knowledge Distillation

As virtual assistants have become more diverse and specialized, so has the demand for application or brand-specific wake words. However, the wake-word-specific datasets typically used to train wake-word detectors are costly to create. In this paper, we explore two techniques to leverage acoustic modeling data for large-vocabulary speech recognition to improve a purpose-built wake-word detector: transfer learning and knowledge distillation. We also explore how these techniques interact with time-synchronous training targets to improve detection latency. Experiments are presented on the open-source "Hey Snips" dataset and a more challenging in-house far-field dataset. Using phone-synchronous targets and knowledge distillation from a large acoustic model, we are able to improve accuracy across dataset sizes for both datasets while reducing latency.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Non-uniform magnetic field as a booster for quantum speed limit: faster quantum information processing

We probe the quantum speed limit (QSL) of an electron when it is trapped in a non-uniform magnetic field. We show that the QSL increases to a large value, but within the regime of causality, by choosing a proper variation in magnetic fields. We also probe the dependence of QSL on spin of electron and find that it is higher for spin-down electron in the relativistic regime. This can be useful in achieving a faster speed of transmission of quantum information. Further, we use the Bremermann--Bekenstein bound to find a critical magnetic field that bridges the gap between non-relativistic and relativistic treatments and relates to the stability of matter. An analytical framework is developed. We also provide a plausible experimental design to supplement our theory.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards 6G Communications: Architecture, Challenges, and Future Directions

The cellular network standard is gradually stepping towards the 6th Generation (6G). In 6G, the pioneering and exclusive features, such as creating connectivity even in space and under water, are attracting Governments, organizations and researchers to spend time, money, effort extensively in this area. In the direction of intelligent network management and distributed secured systems, Artificial Intelligence (AI) and blockchain are going to form the backbone of 6G, respectively. However, there is a need for the study of the 6g architecture and technology, such that researchers can identify the scopes of improvement in 6G. Therefore, in this survey, we discuss the primary requirements of 6G along with its overall architecture and technological aspects. We also highlight crucial challenges and future research directions in 6G networks, which can lead to the successful practical implementation of 6G, as per the objective of its introduction in next generation cellular networks.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation

Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL WSe2. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton are robust to thermal dissociation and are controllable by electrostatic doping. Vanishing of momentum-indirect IL excitons with increasing electron doping is demonstrated in tBL, resulting from the near alignment of Q-K and K-K valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities for studying exciton-phonon coupling, band alignment, and screening.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Emergence of broken-symmetry states at half-integer band fillings in twisted bilayer graphene

The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moiré bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, orbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moiré unit cell. Experimental demonstration of ordered states at fractional moiré band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states near half-integer band-fillings of $ν\approx 0.5$ and $\pm3.5$ at $B\approx 0$ in TBG proximitized by tungsten diselenide (WSe$_2$) through magnetotransport and thermoelectricity measurements. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHSs) of the diverging density of states (DOS) at a discrete set of partial fillings of flat bands. Furthermore, at a band filling of $ν\approx-0.5$, a symmetry-broken Chern insulator emerges at high $B$, compatible with the band structure calculations within a translational symmetry-broken supercell with twice the area of the original TBG moiré cell. Our results are consistent with a spin/charge density wave ground state in TBG in the zero $B$-field limit.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Hall interferometry in triangular domains of marginally twisted bilayer graphene

Quantum Hall (QH) interferometry provides an archetypal platform for the experimental realization of braiding statistics of fractional QH states. However, the complexity of observing fractional statistics requires phase coherence over the length of the interferometer, as well as suppression of Coulomb charging energy. Here, we demonstrate a new type of QH interferometer based on marginally twisted bilayer graphene (mtBLG), with a twist angle $θ$ $\approx$ $0.16$ $^{\circ}$. With the device operating in the QH regime, we observe distinct signatures of electronic Fabry-Pérot (FP) and Aharonov-Bohm (AhB)-oscillations of the magneto-thermopower in the density-magnetic field phase-space, at Landau level filling factors $ν=4$,$8$. We find that QH interference effects are intrinsic to the triangular AB/BA domains in mtBLG that show diminished Coulomb charging effects. Our results demonstrate phase-coherent interference of QH edge modes without any additional gate-defined complex architecture, which may be beneficial in experimental realizations of non-Abelian braiding statistics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Evidence of Lifshitz transition in thermoelectric power of ultrahigh mobility bilayer graphene

Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on the transport properties has been challenging because of its relatively low energy scale ($\sim 1$ meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observe additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of Mott formula can be explained quantitatively by considering the effects of trigonal warping, thereby serving as a possible evidence of a Lifshitz transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Excess entropy and breakdown of semiclassical description of thermoelectricity in twisted bilayer graphene close to half filling

In moiré systems with twisted bilayer graphene (tBLG), the amplification of Coulomb correlation effects at low twist angles ($θ$) is a result of nearly flat low-energy electronic bands and divergent density of states (DOS) at van Hove singularities (vHS). This not only causes superconductivity, Mott insulating states, and quantum anomalous Hall effect close to the critical (or magic) angle $θ= θ_{c} \approx 1.1^\circ$, but also unconventional metallic states that are claimed to exhibit non-Fermi liquid (NFL) excitations. However, unlike superconductivity and the correlation-induced gap in the DOS, unambiguous signatures of NFL effects in the metallic state remain experimentally elusive. Here we report simultaneous measurement of electrical resistivity ($ρ$) and thermoelectric power ($S$) in tBLG at $θ\approx 1.6^\circ$. We observe an emergent violation of the semiclassical Mott relation in the form of excess $S$ close to half-filling. The excess $S$ ($\approx 2$ $μ$V/K at low temperature $T \sim 10$ K) persists up to $\approx 40$ K, and is accompanied by metallic $T$-linear $ρ$ with transport scattering rate ($τ^{-1}$) of near-Planckian magnitude $τ^{-1} \sim k_{B}T/\hbar$. The combination of non-trivial electrical transport and violation of Mott relation provides compelling evidence of NFL physics intrinsic to tBLG, at small twist angle and half-filling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-controllable electronic trap detection in dielectrics

Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than 10 micro-seconds due to injection or ejection of electrons through the metal gate. Using this method, an electronic trap energy distribution was measured in the HfO2 dielectric film and it confirms a maximum number of traps (Delta_NT) of 1.7x1012 cm-2 corresponding to an energy level (Delta_EIL) of 0.45 eV above silicon conduction band (Si-ECB). In comparison, ZrO2-based MIS devices showed a broader distribution of electronic traps throughout the band gap. However, HfO2 contained more than 60% traps in deep level compared to 50% in ZrO2, which establishes the effects of material variation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions

Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on rutile TiO$_2$ (101) substrates. We show that optimal substrate preparation procedure followed by the deposition of VO$_2$ films at a temperature conducive for step-flow growth mode is essential for achieving atomically-smooth VO$_2$ films. The films deposited at optimal substrate temperatures show a step and terrace structure of the underlying TiO$_2$ substrate. At lower deposition temperatures, there is a transition to a mixed growth mode comprising of island growth and layer-by-layer growth modes. VO$_2$ films deposited at optimal substrate temperatures undergo a metal to insulator transition at a transition temperature of $\sim$325 K with $\sim$10$^3$ times increase in resistance, akin to MIT in bulk VO$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Signature of pseudo-diffusive transport in mesoscopic topological insulators

One of the unique features of Dirac Fermions is pseudo-diffusive transport by evanescent modes at low Fermi energies when the disorder is low. At higher Fermi energies i.e. carrier densities, the electrical transport is diffusive in nature and the propagation occurs via plane-waves. In this study, we report the detection of such evanescent modes in the surface states of topological insulator through 1/f noise. While signatures of pseudo-diffusive transport have been seen experimentally in graphene, such behavior is yet to be observed explicitly in any other system with a Dirac dispersion. To probe this, we have studied 1/f noise in topological insulators as a function of gate-voltage, and temperature. Our results show a non-monotonic behavior in 1=f noise as the Fermi energy is varied, suggesting a crossover from pseudo-diffusive to diffusive transport regime in mesoscopic topological insulators. The temperature dependence of noise points towards conductance fluctuations from quantum interference as the dominant source of the noise in these samples.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

1/f noise as a probe for investigating band structure in graphene

A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron transport. Carrier mobility of graphene has been scrutinized, but many parallel scattering mechanisms often obscure its sensitivity to band structure. The flicker noise in graphene depends explicitly on its ability to screen local potential fluctuations. Here we show that the flicker noise is a sensitive probe to the band structure of graphene that vary differently with the carrier density for the linear and parabolic bands. Using devices of different genre, we find this difference to be robust against disorder in the presence or absence of substrate. Our results reveal the microscopic mechanism of noise in Graphene Field Effect Transistors (GraFET), and outline a simple portable method to separate the single from multi layered devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Large low-frequency resistance noise in chemical vapor deposited graphene

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1 - 0.5$. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Ultra-low noise field-effect transistor from multilayer graphene

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Resistance noise in electrically biased bilayer graphene

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.

0 citations0 reviewsNo code linkedOpen access