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Source author record

Arindam Ghosh

Arindam Ghosh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.opticsquant-phastro-ph.HEcond-mat.dis-nncond-mat.othercond-mat.stat-mechcond-mat.supr-coneess.ASgr-qcMachine Learningmath.RANetworking and Internet Architecturephysics.app-phphysics.atom-ph

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Published work

42 published item(s)

preprint2023arXiv

Some generalized Jordan maps on triangular rings force additivity

In this paper, we show that a map $δ$ over a triangular ring $\mathcal{T}$ satisfying $δ(ab+ba)=δ(a)b+a τ(b)+δ(b)a+bτ(a)$, for all $a,b\in \mathcal{T}$ and for some maps $τ$ over $\mathcal{T}$ satisfying $τ(ab+ba)=τ(a)b+a τ(b)+τ(b)a+bτ(a)$, is additive. Also, it is shown that a map $T$ on $\mathcal{T}$ satisfying $T(ab)=T(a)b=aT(b)$, for all $a,b\in \mathcal{T}$, is additive. Further, we establish that if a map $D$ over $\mathcal{T}$ satisfies $(m+n)D(ab)=2mD(a)b+2naD(b)$, for all $a,b\in \mathcal{T}$ and integers $m,n\geq 1$, then $D$ is additive.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Low-resource Low-footprint Wake-word Detection using Knowledge Distillation

As virtual assistants have become more diverse and specialized, so has the demand for application or brand-specific wake words. However, the wake-word-specific datasets typically used to train wake-word detectors are costly to create. In this paper, we explore two techniques to leverage acoustic modeling data for large-vocabulary speech recognition to improve a purpose-built wake-word detector: transfer learning and knowledge distillation. We also explore how these techniques interact with time-synchronous training targets to improve detection latency. Experiments are presented on the open-source "Hey Snips" dataset and a more challenging in-house far-field dataset. Using phone-synchronous targets and knowledge distillation from a large acoustic model, we are able to improve accuracy across dataset sizes for both datasets while reducing latency.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Non-uniform magnetic field as a booster for quantum speed limit: faster quantum information processing

We probe the quantum speed limit (QSL) of an electron when it is trapped in a non-uniform magnetic field. We show that the QSL increases to a large value, but within the regime of causality, by choosing a proper variation in magnetic fields. We also probe the dependence of QSL on spin of electron and find that it is higher for spin-down electron in the relativistic regime. This can be useful in achieving a faster speed of transmission of quantum information. Further, we use the Bremermann--Bekenstein bound to find a critical magnetic field that bridges the gap between non-relativistic and relativistic treatments and relates to the stability of matter. An analytical framework is developed. We also provide a plausible experimental design to supplement our theory.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards 6G Communications: Architecture, Challenges, and Future Directions

The cellular network standard is gradually stepping towards the 6th Generation (6G). In 6G, the pioneering and exclusive features, such as creating connectivity even in space and under water, are attracting Governments, organizations and researchers to spend time, money, effort extensively in this area. In the direction of intelligent network management and distributed secured systems, Artificial Intelligence (AI) and blockchain are going to form the backbone of 6G, respectively. However, there is a need for the study of the 6g architecture and technology, such that researchers can identify the scopes of improvement in 6G. Therefore, in this survey, we discuss the primary requirements of 6G along with its overall architecture and technological aspects. We also highlight crucial challenges and future research directions in 6G networks, which can lead to the successful practical implementation of 6G, as per the objective of its introduction in next generation cellular networks.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation

Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL WSe2. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton are robust to thermal dissociation and are controllable by electrostatic doping. Vanishing of momentum-indirect IL excitons with increasing electron doping is demonstrated in tBL, resulting from the near alignment of Q-K and K-K valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities for studying exciton-phonon coupling, band alignment, and screening.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Emergence of broken-symmetry states at half-integer band fillings in twisted bilayer graphene

The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moiré bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, orbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moiré unit cell. Experimental demonstration of ordered states at fractional moiré band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states near half-integer band-fillings of $ν\approx 0.5$ and $\pm3.5$ at $B\approx 0$ in TBG proximitized by tungsten diselenide (WSe$_2$) through magnetotransport and thermoelectricity measurements. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHSs) of the diverging density of states (DOS) at a discrete set of partial fillings of flat bands. Furthermore, at a band filling of $ν\approx-0.5$, a symmetry-broken Chern insulator emerges at high $B$, compatible with the band structure calculations within a translational symmetry-broken supercell with twice the area of the original TBG moiré cell. Our results are consistent with a spin/charge density wave ground state in TBG in the zero $B$-field limit.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Hall interferometry in triangular domains of marginally twisted bilayer graphene

Quantum Hall (QH) interferometry provides an archetypal platform for the experimental realization of braiding statistics of fractional QH states. However, the complexity of observing fractional statistics requires phase coherence over the length of the interferometer, as well as suppression of Coulomb charging energy. Here, we demonstrate a new type of QH interferometer based on marginally twisted bilayer graphene (mtBLG), with a twist angle $θ$ $\approx$ $0.16$ $^{\circ}$. With the device operating in the QH regime, we observe distinct signatures of electronic Fabry-Pérot (FP) and Aharonov-Bohm (AhB)-oscillations of the magneto-thermopower in the density-magnetic field phase-space, at Landau level filling factors $ν=4$,$8$. We find that QH interference effects are intrinsic to the triangular AB/BA domains in mtBLG that show diminished Coulomb charging effects. Our results demonstrate phase-coherent interference of QH edge modes without any additional gate-defined complex architecture, which may be beneficial in experimental realizations of non-Abelian braiding statistics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Evidence of Lifshitz transition in thermoelectric power of ultrahigh mobility bilayer graphene

Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on the transport properties has been challenging because of its relatively low energy scale ($\sim 1$ meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observe additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of Mott formula can be explained quantitatively by considering the effects of trigonal warping, thereby serving as a possible evidence of a Lifshitz transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Excess entropy and breakdown of semiclassical description of thermoelectricity in twisted bilayer graphene close to half filling

In moiré systems with twisted bilayer graphene (tBLG), the amplification of Coulomb correlation effects at low twist angles ($θ$) is a result of nearly flat low-energy electronic bands and divergent density of states (DOS) at van Hove singularities (vHS). This not only causes superconductivity, Mott insulating states, and quantum anomalous Hall effect close to the critical (or magic) angle $θ= θ_{c} \approx 1.1^\circ$, but also unconventional metallic states that are claimed to exhibit non-Fermi liquid (NFL) excitations. However, unlike superconductivity and the correlation-induced gap in the DOS, unambiguous signatures of NFL effects in the metallic state remain experimentally elusive. Here we report simultaneous measurement of electrical resistivity ($ρ$) and thermoelectric power ($S$) in tBLG at $θ\approx 1.6^\circ$. We observe an emergent violation of the semiclassical Mott relation in the form of excess $S$ close to half-filling. The excess $S$ ($\approx 2$ $μ$V/K at low temperature $T \sim 10$ K) persists up to $\approx 40$ K, and is accompanied by metallic $T$-linear $ρ$ with transport scattering rate ($τ^{-1}$) of near-Planckian magnitude $τ^{-1} \sim k_{B}T/\hbar$. The combination of non-trivial electrical transport and violation of Mott relation provides compelling evidence of NFL physics intrinsic to tBLG, at small twist angle and half-filling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-controllable electronic trap detection in dielectrics

Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than 10 micro-seconds due to injection or ejection of electrons through the metal gate. Using this method, an electronic trap energy distribution was measured in the HfO2 dielectric film and it confirms a maximum number of traps (Delta_NT) of 1.7x1012 cm-2 corresponding to an energy level (Delta_EIL) of 0.45 eV above silicon conduction band (Si-ECB). In comparison, ZrO2-based MIS devices showed a broader distribution of electronic traps throughout the band gap. However, HfO2 contained more than 60% traps in deep level compared to 50% in ZrO2, which establishes the effects of material variation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions

Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on rutile TiO$_2$ (101) substrates. We show that optimal substrate preparation procedure followed by the deposition of VO$_2$ films at a temperature conducive for step-flow growth mode is essential for achieving atomically-smooth VO$_2$ films. The films deposited at optimal substrate temperatures show a step and terrace structure of the underlying TiO$_2$ substrate. At lower deposition temperatures, there is a transition to a mixed growth mode comprising of island growth and layer-by-layer growth modes. VO$_2$ films deposited at optimal substrate temperatures undergo a metal to insulator transition at a transition temperature of $\sim$325 K with $\sim$10$^3$ times increase in resistance, akin to MIT in bulk VO$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Signature of pseudo-diffusive transport in mesoscopic topological insulators

One of the unique features of Dirac Fermions is pseudo-diffusive transport by evanescent modes at low Fermi energies when the disorder is low. At higher Fermi energies i.e. carrier densities, the electrical transport is diffusive in nature and the propagation occurs via plane-waves. In this study, we report the detection of such evanescent modes in the surface states of topological insulator through 1/f noise. While signatures of pseudo-diffusive transport have been seen experimentally in graphene, such behavior is yet to be observed explicitly in any other system with a Dirac dispersion. To probe this, we have studied 1/f noise in topological insulators as a function of gate-voltage, and temperature. Our results show a non-monotonic behavior in 1=f noise as the Fermi energy is varied, suggesting a crossover from pseudo-diffusive to diffusive transport regime in mesoscopic topological insulators. The temperature dependence of noise points towards conductance fluctuations from quantum interference as the dominant source of the noise in these samples.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Formation of field induced absorption in the probe response signal of a four-level V type atomic system a theoretical study

A density matrix based analytical model is developed to study the coherent probe field propagation through a four-level V type system in presence of a coherent control field. The model allows coupling of the probe field from the upper ground level to both of the excited levels keeping the control field locked to a particular transition. The addition of an extra ground level to a conventional three-level V type system creates extra decay paths to the ground levels for the upper level population. A set of sixteen density matrix based equations are formed and then solved analytically under rotating wave approximation to study the probe response under steady state condition. The simulated probe absorption spectra shows absorption dip at the centre of a transparency window only under Doppler broadened condition although the conventional EIT window appears under Doppler free condition. The dependence of the field induced absorption signal on the Rabi frequency of the control field, population transfer rate among the ground levels and temperature of the vapour medium has been studied in details.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Periods of two enigmatic black hole candidates GRS 1915+105 and IGR J17091-3624

Galactic black hole candidates GRS 1915+105 and IGR J17091-3624 have many similarities in their light curves and spectral properties. However, very little is known about the orbital elements of their companions. In case the orbits are eccentric, tidal forces by the black hole on the companion can cause modulations of accretion rates in orbital time scale. We look for these modulations in the light curves of these two objects and find that their periodicities are around 28.3 d (29.0 d) and 32.2 d respectively. Eccentricities are at the most 0.071 and 0.46 respectively. We conclude that both these objects have long orbital periods and are eccentric. This could be a reason why light curves have several similar variability class transitions as reported in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature

We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in random resistor network, particularly in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry or carrier mobility, which can be extended to other classes of 2D material-based devices as well.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Conductivity noise study of the insulator-metal transition and phase co-existence in epitaxial samarium nickelate thin films

Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to co-existence of the metallic and insulating phases. Our experiment offers a new insight on the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity

The interaction between the Fermi sea of conduction electrons and a non-adiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac Fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude $\approx e^{2}/h$ at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities, and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Microscopic Origin of Charged Impurity Scattering and Flicker Noise in MoS2 field-effect Transistors

Scattering of charge carriers and flicker noise in electrical transport are the central performance limiting factors in electronic devices, but their microscopic origin in molybdenum disulphide~(MoS$_2$)-based field effect transistors remains poorly understood. Here, we show that both carrier scattering and low-frequency $1/f$ noise in mechanically exfoliated ultra-thin MoS$_2$ layers are determined by the localized trap states located within the MoS$_2$ channel itself. The trap states not only act as Coulomb scattering centers that determine transport in both equilibrium ($eV< k_BT$) and non-equilibrium ($eV>k_BT$) regimes, where $V$ and $T$ are the source drain bias and temperature respectively, but also exchange carriers with the channel to produce the conductivity noise. The internal origin of the trap states was further confirmed by studying noise in MoS$_2$ films deposited on crystalline boron nitride substrates. Possible origin and nature of the trap states is also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS$_2$ binary hybrids

Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sensitive to photo illumination due to the optical bandgap in MoS$_2$. Despite significant advances in device architectures with both graphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized so far, and the promising opto-electronic properties of such structures remain elusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binary heterostructures display an unexpected and remarkable persistent photoconductivity under illumination of white light. The photoconductivity can not only be tuned independently with both light intensity and back gate voltage, but in response to a suitable combination of light and gate voltage pulses the device functions as a re-writable optoelectronic switch or memory. The persistent, or `ON', state shows virtually no relaxation or decay within the the experimental time scales for low and moderate photoexcitation intensity, indicating a near-perfect charge retention. A microscopic model associates the persistence with strong localization of carriers in MoS$_2$. These effects are also observable at room temperature, and with chemical vapour deposited graphene, and hence are naturally scalable for large area applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing long-range correlations in the Berezinskii-Kosterlitz-Thouless fluctuation regime of ultra-thin NbN superconducting films using transport noise measurements

We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depend strongly on the roughness and structural inhomogeneity of the superconducting films. Our experiment outlines a novel fluctuation-based kinetic probe in detecting the nature of superconductivity in disordered low-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Trap-assisted space charge limited transport in short channel MoS2 transistor

We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited at high $V_{DS}$ and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage ($V_c$) was also determined. The density of trap states was quantitatively calculated from $V_c$. The possible origin of exponential trap distribution in these devices is also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field reaching nearly 10,000% at 8 Tesla, thus surpassing many known non-magnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems a new and attractive candidate for on-chip magnetic field sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct observation of valley-hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations

In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of four when valley triplet states are gapped in the presence of short range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry class which outlines a fundamental feature arising from graphene's unique crystal structure.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrochemical integration of graphene with light absorbing copper-based thin films

We present an electrochemical route for the integration of graphene with light sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive Cu_{x}S films of 1-2 um thickness can be deposited. The effect of growth parameters on the morphology and photoconductivity of Cu_{x}S films is presented. Current-voltage characterization and photoconductivity decay experiments are performed with graphene as one contact and silver epoxy as the other.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy

We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons emitted from the substrate with an in-column low-energy electron detector, we have achieved very high thickness-dependent contrast that allows quantitative estimation of thickness up to several graphene layers. The nanometer scale spatial resolution of the electron micrographs also allows a simple structural characterization scheme for graphene, which has been applied to identify faults, wrinkles, voids, and patches of multilayer growth in large-area chemical vapor deposited graphene. We have discussed the factors, such as differential surface charging and electron beam induced current, that affect the contrast of graphene images in detail.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ-layers

We report low-frequency 1/f noise measurements of degenerately doped Si:P δ-layers at 4.2K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was found to be nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Unconventional Metallicity and Giant Thermopower in a Strongly Interacting Two Dimensional Electron System

We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localised regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance $h/e^2$, the thermopower decreases linearly with temperature indicating metallicity. Remarkably, the magnitude of the thermopower exceeds the predicted value in non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude. Our results indicate a new quantum state and possibly a novel class of itinerant quasiparticles in dilute 2DESs at low temperatures where the Coulomb interaction plays a pivotal role.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

1/f noise as a probe for investigating band structure in graphene

A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron transport. Carrier mobility of graphene has been scrutinized, but many parallel scattering mechanisms often obscure its sensitivity to band structure. The flicker noise in graphene depends explicitly on its ability to screen local potential fluctuations. Here we show that the flicker noise is a sensitive probe to the band structure of graphene that vary differently with the carrier density for the linear and parabolic bands. Using devices of different genre, we find this difference to be robust against disorder in the presence or absence of substrate. Our results reveal the microscopic mechanism of noise in Graphene Field Effect Transistors (GraFET), and outline a simple portable method to separate the single from multi layered devices.

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preprint2010arXiv

A simple kinetic sensor to structural transitions

Driven non-equilibrium structural phase transformation has been probed using time varying resistance fluctuations or noise. We demonstrate that the non-Gaussian component (NGC) of noise obtained by evaluating the higher order statistics of fluctuations, serves as a simple kinetic detector of these phase transitions. Using the martensite transformation in free-standing wires of nickel-titanium binary alloys as a prototype, we observe clear deviations from the Gaussian background in the transformation zone, indicative of the long range correlations in the system as the phase transforms. The viability of non- Gaussian statistics as a robust probe to structural phase transition was also confirmed by comparing the results from differential scanning calorimetry measurements. We further studied the response of the NGC to the modifications in the microstructure on repeated thermal cycling, as well as the variations in the temperature drive rate, and explained the results using established simplistic models based on the different competing time scales. Our experiments (i) suggest an alternative method to estimate the transformation temperature scales with high accuracy, and (ii) establish a connection between the material-specific evolution of microstructure to the statistics of its linear response. Since the method depends on an in-built long-range correlation during transformation, it could be portable to other structural transitions, as well as to materials of different physical origin and size.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Evidence of gate-tunable topological excitations in two-dimensional electron systems

Topological defects are ubiquitous from solid state physics to cosmology, where they drive phase transitions by proliferating as domain walls, monopoles or vortices. As quantum excitations, they often display fractional charge and anyonic statistics, making them relevant to topologically protected quantum computation, but realizing a controlled physical resource for topological excitations has been difficult. Here we report evidence of topological excitations during the localization transition in strongly interacting two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures. We find the electrical conductivity at low electron densities to follow a Berezinskii-Kosterlitz Thouless (BKT)-like order-disorder transition implying a gate-tunable proliferation of charged topological defects. At low temperatures, a weakening in the temperature dependence of conductivity was observed, and linked to the zero point fluctuations and delocalization of the defects. Our experiments also cast crucial insight on the nature of the ground state in strongly interacting 2DESs in presence of disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Field-tunable stochasticity in the magnetization reversal of a cylindrical nanomagnet

The nature of magnetization reversal in an isolated cylindrical nanomagnet has been studied employing time-resolved magnetoresistance measurement. We find that the reversal mode is highly stochastic, occurring either by multimode or single-step switching. Intriguingly, the stochasticity was found to depend on the alignment of the driving magnetic field to the long axis of the nanowires, where predominantly multimode switching gives way to single-step switching behavior as the field direction is rotated from parallel to transverse with respect to the nanowire axis.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Large low-frequency resistance noise in chemical vapor deposited graphene

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1 - 0.5$. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.

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preprint2010arXiv

Signatures of an Anomalous Nernst Effect in a Mesoscopic Two-Dimensional Electron System

We investigate the Nernst effect in a mesoscopic two-dimensional electron system (2DES) at low magnetic fields, before the onset of Landau level quantization. The overall magnitude of the Nernst signal agrees well with semi-classical predictions. We observe reproducible mesoscopic fluctuations in the signal which diminish significantly with an increase in temperature. We also show that the Nernst effect exhibits an anomalous component which is correlated with an oscillatory Hall effect. This behavior may be able to distinguish between different spin-correlated states in the 2DES.

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preprint2010arXiv

Thermoelectric Properties of Electrostatically Tunable Antidot Lattices

We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned independently. Well defined commensurability features in magnetoresistance as well as magnetothermopower are obsereved. We show that the thermopower can be used to efficiently map out the potential landscape of the ADL.

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preprint2010arXiv

Tracking random walk of individual domain walls in cylindrical nanomagnets with resistance noise

The stochasticity of domain wall (DW) motion in magnetic nanowires has been probed by measuring slow fluctuations, or noise, in electrical resistance at small magnetic fields. By controlled injection of DWs into isolated cylindrical nanowires of nickel, we have been able to track the motion of the DWs between the electrical leads by discrete steps in the resistance. Closer inspection of the time-dependence of noise reveals a diffusive random walk of the DWs with an universal kinetic exponent. Our experiments outline a method with which electrical resistance is able to detect the kinetic state of the DWs inside the nanowires, which can be useful in DW-based memory designs.

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preprint2009arXiv

Highly enhanced thermopower in two-dimensional electron systems at milliKelvin temperatures

We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems on GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional non-magnetic high-mobility 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 $μ$V/K, thus exceeding the free electron estimate by more than two orders of magnitude. With support from a parallel independent study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.

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preprint2009arXiv

Resistivity noise in crystalline magnetic nanowires and its implications to domain formation and kinetics

We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel-Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well as a strong collective depinning, which need to be considered when implementing these nanowires in magnetoelectronic devices.

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preprint2009arXiv

Ultra-low noise field-effect transistor from multilayer graphene

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.

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preprint2008arXiv

Resistance noise in electrically biased bilayer graphene

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.

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preprint2005arXiv

Experimental implementation of local adiabatic evolution algorithms by an NMR quantum information processor

Quantum adiabatic algorithm is a method of solving computational problems by evolving the ground state of a slowly varying Hamiltonian. The technique uses evolution of the ground state of a slowly varying Hamiltonian to reach the required output state. In some cases, such as the adiabatic versions of Grover's search algorithm and Deutsch-Jozsa algorithm, applying the global adiabatic evolution yields a complexity similar to their classical algorithms. However, using the local adiabatic evolution, the algorithms given by J. Roland and N. J. Cerf for Grover's search [ Phys. Rev. A. {\bf 65} 042308(2002)] and by Saurya Das, Randy Kobes and Gabor Kunstatter for the Deutsch-Jozsa algorithm [Phys. Rev. A. {\bf 65}, 062301 (2002)], yield a complexity of order $\sqrt{N}$ (where N=2$^{\rm n}$ and n is the number of qubits). In this paper we report the experimental implementation of these local adiabatic evolution algorithms on a two qubit quantum information processor, by Nuclear Magnetic Resonance.

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