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Srijit Goswami

Srijit Goswami appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

14 published item(s)

preprint2019arXiv

Stable quantum dots in an InSb two-dimensional electron gas

Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the $δ$-doping layer from the heterostructure, and induce carriers electrostatically. This allows us to perform the first detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field we determine the ground state spin configuration and show that the large g-factor ($\sim$30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum interference in an interfacial superconductor

The two-dimensional superconductor formed at the interface between the complex oxides, lanthanum aluminate (LAO) and strontium titanate (STO) has several intriguing properties that set it apart from conventional superconductors. Most notably, an electric field can be used to tune its critical temperature (T$_c$), revealing a dome-shaped phase diagram reminiscent of high T$_c$ superconductors. So far, experiments with oxide interfaces have measured quantities which probe only the magnitude of the superconducting order parameter and are not sensitive to its phase. Here, we perform phase-sensitive measurements by realizing the first superconducting quantum interference devices (SQUIDs) at the LAO/STO interface. Furthermore, we develop a new paradigm for the creation of superconducting circuit elements, where local gates enable in-situ creation and control of Josephson junctions. These gate-defined SQUIDs are unique in that the entire device is made from a single superconductor with purely electrostatic interfaces between the superconducting reservoir and the weak link. We complement our experiments with numerical simulations and show that the low superfluid density of this interfacial superconductor results in a large, gate-controllable kinetic inductance of the SQUID. Our observation of robust quantum interference opens up a new pathway to understand the nature of superconductivity at oxide interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ballistic Josephson junctions in edge-contacted graphene

Hybrid graphene-superconductor devices have attracted much attention since the early days of graphene research. So far, these studies have been limited to the case of diffusive transport through graphene with poorly defined and modest quality graphene-superconductor interfaces, usually combined with small critical magnetic fields of the superconducting electrodes. Here we report graphene based Josephson junctions with one-dimensional edge contacts of Molybdenum Rhenium. The contacts exhibit a well defined, transparent interface to the graphene, have a critical magnetic field of 8 Tesla at 4 Kelvin and the graphene has a high quality due to its encapsulation in hexagonal boron nitride. This allows us to study and exploit graphene Josephson junctions in a new regime, characterized by ballistic transport. We find that the critical current oscillates with the carrier density due to phase coherent interference of the electrons and holes that carry the supercurrent caused by the formation of a Fabry-Pérot cavity. Furthermore, relatively large supercurrents are observed over unprecedented long distances of up to 1.5 $μ$m. Finally, in the quantum Hall regime we observe broken symmetry states while the contacts remain superconducting. These achievements open up new avenues to exploit the Dirac nature of graphene in interaction with the superconducting state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale Electrostatic Control of Oxide Interfaces

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity

The interaction between the Fermi sea of conduction electrons and a non-adiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac Fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude $\approx e^{2}/h$ at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities, and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS$_2$ binary hybrids

Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sensitive to photo illumination due to the optical bandgap in MoS$_2$. Despite significant advances in device architectures with both graphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized so far, and the promising opto-electronic properties of such structures remain elusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binary heterostructures display an unexpected and remarkable persistent photoconductivity under illumination of white light. The photoconductivity can not only be tuned independently with both light intensity and back gate voltage, but in response to a suitable combination of light and gate voltage pulses the device functions as a re-writable optoelectronic switch or memory. The persistent, or `ON', state shows virtually no relaxation or decay within the the experimental time scales for low and moderate photoexcitation intensity, indicating a near-perfect charge retention. A microscopic model associates the persistence with strong localization of carriers in MoS$_2$. These effects are also observable at room temperature, and with chemical vapour deposited graphene, and hence are naturally scalable for large area applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field reaching nearly 10,000% at 8 Tesla, thus surpassing many known non-magnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems a new and attractive candidate for on-chip magnetic field sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Unconventional Metallicity and Giant Thermopower in a Strongly Interacting Two Dimensional Electron System

We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localised regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance $h/e^2$, the thermopower decreases linearly with temperature indicating metallicity. Remarkably, the magnitude of the thermopower exceeds the predicted value in non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude. Our results indicate a new quantum state and possibly a novel class of itinerant quasiparticles in dilute 2DESs at low temperatures where the Coulomb interaction plays a pivotal role.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Signatures of an Anomalous Nernst Effect in a Mesoscopic Two-Dimensional Electron System

We investigate the Nernst effect in a mesoscopic two-dimensional electron system (2DES) at low magnetic fields, before the onset of Landau level quantization. The overall magnitude of the Nernst signal agrees well with semi-classical predictions. We observe reproducible mesoscopic fluctuations in the signal which diminish significantly with an increase in temperature. We also show that the Nernst effect exhibits an anomalous component which is correlated with an oscillatory Hall effect. This behavior may be able to distinguish between different spin-correlated states in the 2DES.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermoelectric Properties of Electrostatically Tunable Antidot Lattices

We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned independently. Well defined commensurability features in magnetoresistance as well as magnetothermopower are obsereved. We show that the thermopower can be used to efficiently map out the potential landscape of the ADL.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Highly enhanced thermopower in two-dimensional electron systems at milliKelvin temperatures

We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems on GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional non-magnetic high-mobility 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 $μ$V/K, thus exceeding the free electron estimate by more than two orders of magnitude. With support from a parallel independent study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Controllable valley splitting in silicon quantum devices

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG

The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication.

0 citations0 reviewsNo code linkedOpen access