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AQing Chen

AQing Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallphysics.ins-detphysics.optics

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Published work

8 published item(s)

preprint2016arXiv

Effects of nickel doping on the preferred orientation and oxidation potential of Ti/Sb-SnO2 anodes prepared by spray pyrolysis

Nickel and antimony co-doped Ti/SnO2 (Ti/Ni-Sb-SnO2) anodes were prepared by spray pyrolysis. Effects of nickel concentration on the structure and onset potential for oxygen evolution of Ti/Ni-Sb-SnO2 anodes have been systematically investigated. XRD analyses suggest that SnO2 thin films grow in preferential orientation along (101) plane as the nickel concentration increases. The enhanced onset potential of oxygen is above 2.4 V vs NHE due to the introduction of nickel doping, and increases slightly with the nickel concentration. The calculated results show that work function of Ni/Sb co-doped SnO2 also increases with the Ni doping level, which contributes to the enhancement of onset potential for oxygen evolution.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ultra-high oxidation potential of Ti/Cu-SnO2 anodes fabricated by spray pyrolysis for wastewater treatment

High oxidation potential indicates anodes have high oxidation power and high current efficiency for organics oxidation. In this paper, we prepared Ti/Cu-SnO2 anodes using spray pyrolysis method. The Ti/Cu-SnO2 anodes have an ultra-high oxidation potential of about 2.7 V vs NHE, suitable for use in wastewater treatment. The Ti/Cu-SnO2 anodes exhibit the preferred orientation along (110) plane at high Cu doped concentration. First-principles calculations suggest that work function of Cu-SnO2 increases with the Cu doping concentration. It is obtained that the preferred (110) plane and the high work function are responsible for the enhanced oxidation potential of Ti/Cu-SnO2 anodes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation

The influences of work function of transparent conducting oxides (TCO) on the per-formance of organic solar cells, including open circuit voltage, conversion efficiency and fill factor, has been simulated. It is obtained that for non-Ohmic contact the open circuit voltage and conversion efficiency increase monotonically with the TCO work function but keep constant for Ohmic contact. Fill factor decreases and increases with the electrode work function when the electrode work function is below and above a critical value (4.2 eV for TCO and 4.5 eV for back-contact), respectively. The results of this simulation are significant in the choice of TCO contacts to optimize organic planar heterojunction solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

ZnO/a-Si Distributed Bragg Reflectors for Light Trapping in Thin Film Solar Cells from Visible to Infrared Range

Distributed bragg reflectors (DBRs) consisting of ZnO and amorphous silicon (a-Si) were prepared by magnetron sputtering method for selective light trapping. The quarter-wavelength ZnO/a-Si DBRs with only 6 periods exhibit a peak reflectance of above 99% and have a full width at half maximum that is greater than 347 nm in the range of visible to infrared. The 6-pair reversed quarter-wavelength ZnO/a-Si DBRs also have a peak reflectance of 98%. Combination of the two ZnO/a-Si DBRs leads to a broader stopband from 686 nm to 1354 nm. Using the ZnO/a-Si DBRs as the rear reflector of a-Si thin film solar cells significantly increases the photocurrent in the spectrum range of 400 nm to 1000 nm, in comparison with that of the cells with Al reflector. The obtained results suggest that ZnO/a-Si DBRs are promising reflectors of a-Si thin-film solar cells for light trapping.

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preprint2013arXiv

A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering

ITO thin films were deposited on glass substrates by d.c. magnetron sputtering with varied oxygen flow rates. It was found that the optical absorption decreases and optical absorption edge has blue shifts with the increasing oxygen flow rate. Oxygen vacancy concentration was characterized and analyzed by XPS. It is shown that the oxygen vacancy concentration increases with oxygen flow rates, which is a different observation from the current understanding. The energy band structures associated with different vacancy concentrations of ITO were calculated using the first-principle based on density functional theory. The calculation results show that the increase of oxygen vacancies induces the increase of bands below Fermi level as well as the presence of a second band gap, which accounts for effects of the oxygen vacancies on the blue shifts.

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preprint2011arXiv

Effects of phosphorus-doping upon the electronic structures of single wall carbon nanotubes

The phosphorus-doped single wall carbon nanotube (PSWCNT) is studied by using First-Principle methods based on Density Function Theory (DFT). The formation energy, total energy, band structure, geometry structure and density of states are calculated. It is found that the formation energy of the P-doped single carbon nanotubes increases with diameters; the total energy of carbon nanotubes with the same diameter decreases as the doping rate increases. The effects of impurity position on the im-purity level are discussed. It illustrates that the position of the impurity level may depend on the C-P-C bond angle. According to the above results, it is feasible to substitute a carbon atom with a phosphorus atom in SWCNT. It is also found that P-doped carbon nanotubes are N type semiconductor.

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preprint2011arXiv

Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell

The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.

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preprint2011arXiv

Special electronic structures and quantum conduction of B/P co-doping carbon nanotubes under electric field using the first principle

Boron (B)/phosphorus (P) doped single wall carbon nanotubes (B-PSWNTs) are studied by using the First- Principle method based on density function theory (DFT). Mayer bond order, band structure, electrons density and density of states are calculated. It concludes that the B-PSWNTs have special band structure which is quite different from BN nanotubes, and that metallic carbon nanotubes will be converted to semiconductor due to boron/phosphorus co-doping which breaks the symmetrical structure. The bonding forms in B-PSWNTs are investigated in detail. Besides, Mulliken charge population and the quantum conductance are also calculated to study the quantum transport characteristics of B-PSWNT hetero-junction. It is found that the position of p-n junction in this hetero-junction will be changed as the applied electric field increase and it performs the characteristics of diode.

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