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Source author record

QingYi Shao

QingYi Shao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.ins-det

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Published work

4 published item(s)

preprint2016arXiv

Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation

The influences of work function of transparent conducting oxides (TCO) on the per-formance of organic solar cells, including open circuit voltage, conversion efficiency and fill factor, has been simulated. It is obtained that for non-Ohmic contact the open circuit voltage and conversion efficiency increase monotonically with the TCO work function but keep constant for Ohmic contact. Fill factor decreases and increases with the electrode work function when the electrode work function is below and above a critical value (4.2 eV for TCO and 4.5 eV for back-contact), respectively. The results of this simulation are significant in the choice of TCO contacts to optimize organic planar heterojunction solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Effects of phosphorus-doping upon the electronic structures of single wall carbon nanotubes

The phosphorus-doped single wall carbon nanotube (PSWCNT) is studied by using First-Principle methods based on Density Function Theory (DFT). The formation energy, total energy, band structure, geometry structure and density of states are calculated. It is found that the formation energy of the P-doped single carbon nanotubes increases with diameters; the total energy of carbon nanotubes with the same diameter decreases as the doping rate increases. The effects of impurity position on the im-purity level are discussed. It illustrates that the position of the impurity level may depend on the C-P-C bond angle. According to the above results, it is feasible to substitute a carbon atom with a phosphorus atom in SWCNT. It is also found that P-doped carbon nanotubes are N type semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell

The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Special electronic structures and quantum conduction of B/P co-doping carbon nanotubes under electric field using the first principle

Boron (B)/phosphorus (P) doped single wall carbon nanotubes (B-PSWNTs) are studied by using the First- Principle method based on density function theory (DFT). Mayer bond order, band structure, electrons density and density of states are calculated. It concludes that the B-PSWNTs have special band structure which is quite different from BN nanotubes, and that metallic carbon nanotubes will be converted to semiconductor due to boron/phosphorus co-doping which breaks the symmetrical structure. The bonding forms in B-PSWNTs are investigated in detail. Besides, Mulliken charge population and the quantum conductance are also calculated to study the quantum transport characteristics of B-PSWNT hetero-junction. It is found that the position of p-n junction in this hetero-junction will be changed as the applied electric field increase and it performs the characteristics of diode.

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