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Researcher profile

Shi Liu

Shi Liu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phcond-mat.str-eleess.SPInformation Theorymath.ITphysics.app-ph

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Published work

10 published item(s)

preprint2026arXiv

Electrical Regulation of Transverse Spin Currents in Unconventional Magnetic Ferroeletrics

We identify hexagonal YMnO$_3$ as a material realization of the elusive $β$-phase of unconventional magnetism, a noncollinear, noncoplanar antiferromagnetic state defined by intrinsic spin-momentum locking and a topological spin texture. First-principle calculations reveal that this unique electronic structure enables a perpendicular electric field to generate a transverse pure spin current, a response that occurs without requiring relativistic spin-orbit coupling. Symmetry analysis demonstrates that this spin current is intimately related to the material's ferroelectric polarization that breaks the inversion symmetry and is rigorously forbidden at domain walls where electrical polarization vanishes. This provides a blueprint for a non-volatile transistor where a gate voltage switches the spin current conductivity by controlling domain wall density, enabling all-electrical control for energy-efficient antiferromagnetic spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Origin of Reverse Size Effect in Ferroelectric Hafnia Thin Films

The persistence of ferroelectricity in ultrathin HfO$_2$ films challenges conventional theories, particularly given the paradoxical observation that the out-of-plane lattice spacing increases as the film thickness decreases, a reverse size effect absent in perovskite ferroelectrics. Here, we resolve this puzzle by revealing that this anomalous lattice expansion is counterintuitively coupled to a suppressed out-of-plane polarization. First-principles calculations combined with analytical modeling identify two mechanisms behind this expansion: a negative longitudinal piezoelectric response to the residual depolarization field and a positive surface stress that becomes significant at reduced thickness. Their interplay quantitatively reproduces the experimentally observed lattice expansion. Furthermore, (111)-oriented HfO$_2$ films can support out-of-plane polarization even under open-circuit conditions, in contrast to (001) films that stabilize a nonpolar ground state. This behavior points to the emergence of orientation-induced hyperferroelectricity, an unrecognized mechanism that enables polarization persistence through orientation engineering without electrode screening. We further demonstrate that this principle generalizes to conventional perovskites such as PbTiO$_3$, offering a strategy to eliminate the critical thickness limit by choosing the appropriate film orientation. As a practical pathway to device integration, we also identify the two-dimensional electride Ca$_2$N as a near-ideal electrode that fully restores the ferroelectric properties of HfO$_2$ in ultrathin capacitors.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

A DFT+$U$+$V$ study of pristine and oxygen-deficient HfO$_2$ with self-consistent Hubbard parameters

HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies, particularly in positively charged states, are suggested to profoundly impact the polymorphism kinetics and phase stability of hafnia, thereby affecting its ferroelectric behavior. The electronic structures of pristine and oxygen-deficient hafnia polymorph have been extensively studied using density functional theory, primarily employing (semi-)local exchange-correlation functionals. However, these methods often underestimate band gaps and may not accurately capture the localized nature of $d$-electrons. In this work, we investigate hafnia in various phases using DFT + $U$ + $V$, with onsite $U$ and intersite $V$ Hubbard parameters computed self-consistently via the pseudohybrid Hubbard density functional, ACBN0, and its extended version eACBN0. We find that the self-consistent DFT + $U$ method provides comparable accuracy to the computationally more expensive Heyd-Scuseria-Ernzerhof (HSE) hybrid density functional in predicting relative thermodynamic stability, band gaps, and density of states. Furthermore, it is a cost-effective approach for estimating the formation energies of oxygen vacancies. Additionally, we demonstrate that environmentally dependent Hubbard parameters serve as useful indicators for analyzing bond strengths and electronic structures in real space.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Depolarization Induced III-V Triatomic Layers with Tristable Polarization States

The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few silicon-compatible ferroelectrics suitable for device downscaling. We demonstrate with first-principles calculations that the enhanced depolarization field at the nanoscale can be utilized to soften unswitchable wurtzite III-V semiconductors, resulting in ultrathin two-dimensional (2D) sheets possessing reversible polarization states. A 2D sheet of AlSb consisting of three atomic planes is identified to host both ferroelectricity and antiferroelectricity, and the tristate switching is accompanied by a metal-semiconductor transition. The thermodynamics stability and potential synthesizability of the triatomic layer are corroborated with phonon spectrum calculations, ab initio molecular dynamics, and variable-composition evolutionary structure search. We propose a 2D AlSb-based homojunction field effect transistor that supports three distinct and nonvolatile resistance states. This new class of III-V semiconductor-derived 2D materials with dual ferroelectricity and antiferroelectricity opens up the possibility for nonvolatile multibit-based integrated nanoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Structural Phase Transitions in SrTiO3 from Deep Potential Molecular Dynamics

Strontium titanate (SrTiO3) is regarded as an essential material for oxide electronics. One of its many remarkable features is subtle structural phase transition, driven by antiferrodistortive lattice mode, from a high-temperature cubic phase to a low-temperature tetragonal phase. Classical molecular dynamics (MD) simulation is an efficient technique to reveal atomistic features of phase transition, but its application is often limited by the accuracy of empirical interatomic potentials. Here, we develop an accurate deep potential (DP) model of SrTiO3 based on a machine learning method using data from first-principles density functional theory (DFT) calculations. The DP model has DFT-level accuracy, capable of performing efficient MD simulations and accurate property predictions. Using the DP model, we investigate the temperature-driven cubic-to-tetragonal phase transition and construct the in-plane biaxial strain-temperature phase diagram of SrTiO3. The simulations demonstrate that strain-induced ferroelectric phase is characterized by two order parameters, ferroelectric distortion and antiferrodistortion, and the ferroelectric phase transition has both displacive and order-disorder characters. This works lays the foundation for the development of accurate DP models of other complex perovskite materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Deep Learning of Accurate Force Field of Ferroelectric HfO$_2$

The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances of ferroelectrics are intimately related to their dynamic responses to external stimuli such as electric fields at finite temperatures. Molecular dynamics is an ideal technique for investigating dynamical processes on large length and time scales, though its applications to new materials is often hindered by the limited availability and accuracy of classical force fields. Here we present a deep neural network-based interatomic force field of HfO$_2$ learned from {\em ab initio} data using a concurrent learning procedure. The model potential is able to predict structural properties such as elastic constants, equation of states, phonon dispersion relationships, and phase transition barriers of various hafnia polymorphs with accuracy comparable with density functional theory calculations. The validity of this model potential is further confirmed by the reproduction of experimental sequences of temperature-driven ferroelectric-paraelectric phase transitions of HfO$_2$ with isobaric-isothermal ensemble molecular dynamics simulations. We suggest a general approach to extend the model potential of HfO$_2$ to related material systems including dopants and defects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Designing Xenes with Two-Dimensional Triangular Lattice

Xenes, graphene-like two-dimensional (2D) monoelemental crystals with a honeycomb symmetry, have been the focus of numerous experimental and theoretical studies. In comparison, single-element 2D materials with a triangular lattice symmetry have not received due attention. Here, taking Pb as an example, we investigate the triangular-lattice monolayer made of group-IV atoms employing first-principles density functional theory calculations. The flat Pb monolayer supports a mirror-symmetry-protected spinless nodal line in the absence spin-orbit coupling (SOC). The introduction of an out-of-plane buckling creates a glide mirror, protecting an anisotropic Dirac nodal loop. Both flat and buckled Pb monolayers become topologically trivial after including SOC. A large buckling will make the Pb sheet a 2D semiconductor with symmetry-protected Dirac points below the Fermi level. The electronic structures of other group-IV triangular lattices such as Ge and Sn demonstrate strong similarity to Pb. We further design a quasi-3D crystal PbHfO$_2$ by alternately stacking Pb and 1T-HfO$_2$ monolayers. The new compound PbHfO$_2$ is dynamically stable and retains the properties of Pb monolayer. By applying epitaxial strains to PbHfO$_2$, it is possible to drive an insulator-to-metal transition coupled with an anti-ferroelectric-to-paraelectric phase transition. Our results suggest the potential of the 2D triangular lattice as a complimentary platform to design new type of broadly-defined Xenes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

MMSE Based Greedy Antenna Selection Scheme for AF MIMO Relay Systems

We propose a greedy minimum mean squared error (MMSE)-based antenna selection algorithm for amplify-and-forward (AF) multiple-input multiple-output (MIMO) relay systems. Assuming equal-power allocation across the multi-stream data, we derive a closed form expression for the mean squared error (MSE) resulted from adding each additional antenna pair. Based on this result, we iteratively select the antenna-pairs at the relay nodes to minimize the MSE. Simulation results show that our algorithm greatly outperforms the existing schemes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-Induced Room-Temperature Ferroelectricity in SrTiO$_3$ Membranes

Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO$_3$ by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy, optical second harmonic generation measurements, and atomistic modeling, we demonstrate robust room-temperature ferroelectricity in SrTiO$_3$ with 2.0% uniaxial tensile strain, corroborated by the notable features of 180° ferroelectric domains and an extrapolated transition temperature of 400 K. Our work reveals the enormous potential of employing oxide membranes to create and enhance ferroelectricity in environmentally benign lead-free oxides, which hold great promise for applications ranging from non-volatile memories and microwave electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

T-square resistivity without Umklapp scattering in dilute metallic Bi$_2$O$_2$Se

The electrical resistivity of Fermi liquids (FLs) displays a quadratic temperature ($T$) dependence because of electron-electron (e-e) scattering. For such collisions to decay the charge current, there are two known mechanisms: inter-band scattering (identified by Baber) and Umklapp events. However, dilute metallic strontium titanate (STO) was found to display $T^2$ resistivity in absence of either of these two mechanisms. The presence of soft phonons and their possible role as scattering centers raised the suspicion that $T$-square resistivity in STO is not due to e-e scattering. Here, we present the case of Bi$_2$O$_2$Se, a layered semiconductor with hard phonons, which becomes a dilute metal with a small single-component Fermi surface upon doping. It displays $T$-square resistivity well below the degeneracy temperature where neither Umklapp nor interband scattering is conceivable. We observe a universal scaling between the prefactor of $T^2$ resistivity and the Fermi energy, which is an extension of the Kadowaki-Woods plot to dilute metals. Our results imply the absence of a satisfactory theoretical basis for the ubiquity of e-e driven $T$-square resistivity in Fermi liquids.

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