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Shi Liu

Shi Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-phcond-mat.str-eleess.SPInformation Theorymath.ITphysics.app-ph

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Published work

18 published item(s)

preprint2026arXiv

Electrical Regulation of Transverse Spin Currents in Unconventional Magnetic Ferroeletrics

We identify hexagonal YMnO$_3$ as a material realization of the elusive $β$-phase of unconventional magnetism, a noncollinear, noncoplanar antiferromagnetic state defined by intrinsic spin-momentum locking and a topological spin texture. First-principle calculations reveal that this unique electronic structure enables a perpendicular electric field to generate a transverse pure spin current, a response that occurs without requiring relativistic spin-orbit coupling. Symmetry analysis demonstrates that this spin current is intimately related to the material's ferroelectric polarization that breaks the inversion symmetry and is rigorously forbidden at domain walls where electrical polarization vanishes. This provides a blueprint for a non-volatile transistor where a gate voltage switches the spin current conductivity by controlling domain wall density, enabling all-electrical control for energy-efficient antiferromagnetic spintronics.

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preprint2026arXiv

Origin of Reverse Size Effect in Ferroelectric Hafnia Thin Films

The persistence of ferroelectricity in ultrathin HfO$_2$ films challenges conventional theories, particularly given the paradoxical observation that the out-of-plane lattice spacing increases as the film thickness decreases, a reverse size effect absent in perovskite ferroelectrics. Here, we resolve this puzzle by revealing that this anomalous lattice expansion is counterintuitively coupled to a suppressed out-of-plane polarization. First-principles calculations combined with analytical modeling identify two mechanisms behind this expansion: a negative longitudinal piezoelectric response to the residual depolarization field and a positive surface stress that becomes significant at reduced thickness. Their interplay quantitatively reproduces the experimentally observed lattice expansion. Furthermore, (111)-oriented HfO$_2$ films can support out-of-plane polarization even under open-circuit conditions, in contrast to (001) films that stabilize a nonpolar ground state. This behavior points to the emergence of orientation-induced hyperferroelectricity, an unrecognized mechanism that enables polarization persistence through orientation engineering without electrode screening. We further demonstrate that this principle generalizes to conventional perovskites such as PbTiO$_3$, offering a strategy to eliminate the critical thickness limit by choosing the appropriate film orientation. As a practical pathway to device integration, we also identify the two-dimensional electride Ca$_2$N as a near-ideal electrode that fully restores the ferroelectric properties of HfO$_2$ in ultrathin capacitors.

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preprint2025arXiv

A DFT+$U$+$V$ study of pristine and oxygen-deficient HfO$_2$ with self-consistent Hubbard parameters

HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies, particularly in positively charged states, are suggested to profoundly impact the polymorphism kinetics and phase stability of hafnia, thereby affecting its ferroelectric behavior. The electronic structures of pristine and oxygen-deficient hafnia polymorph have been extensively studied using density functional theory, primarily employing (semi-)local exchange-correlation functionals. However, these methods often underestimate band gaps and may not accurately capture the localized nature of $d$-electrons. In this work, we investigate hafnia in various phases using DFT + $U$ + $V$, with onsite $U$ and intersite $V$ Hubbard parameters computed self-consistently via the pseudohybrid Hubbard density functional, ACBN0, and its extended version eACBN0. We find that the self-consistent DFT + $U$ method provides comparable accuracy to the computationally more expensive Heyd-Scuseria-Ernzerhof (HSE) hybrid density functional in predicting relative thermodynamic stability, band gaps, and density of states. Furthermore, it is a cost-effective approach for estimating the formation energies of oxygen vacancies. Additionally, we demonstrate that environmentally dependent Hubbard parameters serve as useful indicators for analyzing bond strengths and electronic structures in real space.

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preprint2023arXiv

Depolarization Induced III-V Triatomic Layers with Tristable Polarization States

The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few silicon-compatible ferroelectrics suitable for device downscaling. We demonstrate with first-principles calculations that the enhanced depolarization field at the nanoscale can be utilized to soften unswitchable wurtzite III-V semiconductors, resulting in ultrathin two-dimensional (2D) sheets possessing reversible polarization states. A 2D sheet of AlSb consisting of three atomic planes is identified to host both ferroelectricity and antiferroelectricity, and the tristate switching is accompanied by a metal-semiconductor transition. The thermodynamics stability and potential synthesizability of the triatomic layer are corroborated with phonon spectrum calculations, ab initio molecular dynamics, and variable-composition evolutionary structure search. We propose a 2D AlSb-based homojunction field effect transistor that supports three distinct and nonvolatile resistance states. This new class of III-V semiconductor-derived 2D materials with dual ferroelectricity and antiferroelectricity opens up the possibility for nonvolatile multibit-based integrated nanoelectronics.

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preprint2022arXiv

Structural Phase Transitions in SrTiO3 from Deep Potential Molecular Dynamics

Strontium titanate (SrTiO3) is regarded as an essential material for oxide electronics. One of its many remarkable features is subtle structural phase transition, driven by antiferrodistortive lattice mode, from a high-temperature cubic phase to a low-temperature tetragonal phase. Classical molecular dynamics (MD) simulation is an efficient technique to reveal atomistic features of phase transition, but its application is often limited by the accuracy of empirical interatomic potentials. Here, we develop an accurate deep potential (DP) model of SrTiO3 based on a machine learning method using data from first-principles density functional theory (DFT) calculations. The DP model has DFT-level accuracy, capable of performing efficient MD simulations and accurate property predictions. Using the DP model, we investigate the temperature-driven cubic-to-tetragonal phase transition and construct the in-plane biaxial strain-temperature phase diagram of SrTiO3. The simulations demonstrate that strain-induced ferroelectric phase is characterized by two order parameters, ferroelectric distortion and antiferrodistortion, and the ferroelectric phase transition has both displacive and order-disorder characters. This works lays the foundation for the development of accurate DP models of other complex perovskite materials.

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preprint2020arXiv

Deep Learning of Accurate Force Field of Ferroelectric HfO$_2$

The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances of ferroelectrics are intimately related to their dynamic responses to external stimuli such as electric fields at finite temperatures. Molecular dynamics is an ideal technique for investigating dynamical processes on large length and time scales, though its applications to new materials is often hindered by the limited availability and accuracy of classical force fields. Here we present a deep neural network-based interatomic force field of HfO$_2$ learned from {\em ab initio} data using a concurrent learning procedure. The model potential is able to predict structural properties such as elastic constants, equation of states, phonon dispersion relationships, and phase transition barriers of various hafnia polymorphs with accuracy comparable with density functional theory calculations. The validity of this model potential is further confirmed by the reproduction of experimental sequences of temperature-driven ferroelectric-paraelectric phase transitions of HfO$_2$ with isobaric-isothermal ensemble molecular dynamics simulations. We suggest a general approach to extend the model potential of HfO$_2$ to related material systems including dopants and defects.

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preprint2020arXiv

Designing Xenes with Two-Dimensional Triangular Lattice

Xenes, graphene-like two-dimensional (2D) monoelemental crystals with a honeycomb symmetry, have been the focus of numerous experimental and theoretical studies. In comparison, single-element 2D materials with a triangular lattice symmetry have not received due attention. Here, taking Pb as an example, we investigate the triangular-lattice monolayer made of group-IV atoms employing first-principles density functional theory calculations. The flat Pb monolayer supports a mirror-symmetry-protected spinless nodal line in the absence spin-orbit coupling (SOC). The introduction of an out-of-plane buckling creates a glide mirror, protecting an anisotropic Dirac nodal loop. Both flat and buckled Pb monolayers become topologically trivial after including SOC. A large buckling will make the Pb sheet a 2D semiconductor with symmetry-protected Dirac points below the Fermi level. The electronic structures of other group-IV triangular lattices such as Ge and Sn demonstrate strong similarity to Pb. We further design a quasi-3D crystal PbHfO$_2$ by alternately stacking Pb and 1T-HfO$_2$ monolayers. The new compound PbHfO$_2$ is dynamically stable and retains the properties of Pb monolayer. By applying epitaxial strains to PbHfO$_2$, it is possible to drive an insulator-to-metal transition coupled with an anti-ferroelectric-to-paraelectric phase transition. Our results suggest the potential of the 2D triangular lattice as a complimentary platform to design new type of broadly-defined Xenes.

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preprint2020arXiv

MMSE Based Greedy Antenna Selection Scheme for AF MIMO Relay Systems

We propose a greedy minimum mean squared error (MMSE)-based antenna selection algorithm for amplify-and-forward (AF) multiple-input multiple-output (MIMO) relay systems. Assuming equal-power allocation across the multi-stream data, we derive a closed form expression for the mean squared error (MSE) resulted from adding each additional antenna pair. Based on this result, we iteratively select the antenna-pairs at the relay nodes to minimize the MSE. Simulation results show that our algorithm greatly outperforms the existing schemes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-Induced Room-Temperature Ferroelectricity in SrTiO$_3$ Membranes

Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO$_3$ by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy, optical second harmonic generation measurements, and atomistic modeling, we demonstrate robust room-temperature ferroelectricity in SrTiO$_3$ with 2.0% uniaxial tensile strain, corroborated by the notable features of 180° ferroelectric domains and an extrapolated transition temperature of 400 K. Our work reveals the enormous potential of employing oxide membranes to create and enhance ferroelectricity in environmentally benign lead-free oxides, which hold great promise for applications ranging from non-volatile memories and microwave electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

T-square resistivity without Umklapp scattering in dilute metallic Bi$_2$O$_2$Se

The electrical resistivity of Fermi liquids (FLs) displays a quadratic temperature ($T$) dependence because of electron-electron (e-e) scattering. For such collisions to decay the charge current, there are two known mechanisms: inter-band scattering (identified by Baber) and Umklapp events. However, dilute metallic strontium titanate (STO) was found to display $T^2$ resistivity in absence of either of these two mechanisms. The presence of soft phonons and their possible role as scattering centers raised the suspicion that $T$-square resistivity in STO is not due to e-e scattering. Here, we present the case of Bi$_2$O$_2$Se, a layered semiconductor with hard phonons, which becomes a dilute metal with a small single-component Fermi surface upon doping. It displays $T$-square resistivity well below the degeneracy temperature where neither Umklapp nor interband scattering is conceivable. We observe a universal scaling between the prefactor of $T^2$ resistivity and the Fermi energy, which is an extension of the Kadowaki-Woods plot to dilute metals. Our results imply the absence of a satisfactory theoretical basis for the ubiquity of e-e driven $T$-square resistivity in Fermi liquids.

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preprint2016arXiv

Atomistic Description for Temperature-Driven Phase Transitions in BaTiO$_3$

Barium titanate (BaTiO$_3$) is a prototypical ferroelectric perovskite that undergoes the rhombohedral-orthorhombic-tetragonal-cubic phase transitions as the temperature increases. In this work, we develop a classical interatomic potential for BaTiO$_3$ within the framework of the bond-valence theory. The force field is parameterized from first-principles results, enabling accurate large-scale molecular dynamics (MD) simulations at finite temperatures. Our model potential for BaTiO$_3$ reproduces the temperature-driven phase transitions in isobaric-isothermal ensemble (NPT) MD simulations. This potential allows the analysis of BaTiO$_3$ structures with atomic resolution. By analyzing the local displacements of Ti atoms, we demonstrate that the phase transitions of BaTiO$_3$ exhibit a mix of order-disorder and displacive characters. Besides, from detailed observation of structural dynamics during phase transition, we discover that the global phase transition is associated with changes in the equilibrium value and fluctuations of each polarization component, including the ones already averaging to zero, Contrary to the conventional understanding that temperature increase generally causes bond-softening transition, the x polarization component exhibits a bond-hardening character during the orthorhombic to tetragonal transition. These results provide further insights about the temperature-driven phase transitions in BaTiO$_3$.

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preprint2016arXiv

Caloric Effects in Methylammonium Lead Iodide from Molecular Dynamics Simulations

Organic-inorganic hybrid perovskite architecture could serve as a robust platform for materials design to realize functionalities beyond photovoltaic applications. We explore caloric effects in organometal halide perovskites, taking methylammonium lead iodide (MAPbI$_3$) as an example, using all-atom molecular dynamics simulations with a first-principles based interatomic potential. The adiabatic thermal change is estimated directly by introducing different driving fields in the simulations. We find that MAPbI$_3$ exhibits both electrocaloric and mechanocaloric effects at room temperature. Local structural analysis reveals that the rearrangement of molecular cations in response to electric and stress fields is responsible for the caloric effects. The enhancement of caloric response could be realized through strain engineering and chemical doping.

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preprint2015arXiv

Photoferroelectric and Photopiezoelectric Properties of Organometal Halide Perovskites

Piezoelectrics play a critical role in various applications. The permanent dipole associated with the molecular cations in organometal-halide perovskites (OMHPs) may lead to spontaneous polarization and thus piezoelectricity. Here, we explore the piezoelectric properties of OMHPs with density functional theory. We find that the piezoelectric coefficient depends sensitively on the molecular ordering, and that the experimentally observed light-enhanced piezoelectricity is due to to a non-polar to polar structural transition. By comparing OMHPs with different atomic substitutions in the $ABX_3$ architecture, we find that the displacement of the $B$-site cation contributes to nearly all the piezoelectric response, and that the competition between $A$-$X$ hydrogen bond and $B$-$X$ metal-halide bond in OMHPs controls the piezoelectric properties. These results highlight the potential of the OMHP architecture for designing new functional photoferroelectrics and photopiezoelectrics.

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preprint2015arXiv

Polarization Dependence of Water Adsorption to CH$_3$NH$_3$PbI$_3$ (001) Surfaces

The instability of organometal halide perovskites when in contact with water is a serious challenge to their feasibility as solar cell materials. Although studies of moisture exposure have been conducted, an atomistic understanding of the degradation mechanism is required. Toward this goal, we study the interaction of water with the (001) surfaces of CH$_3$NH$_3$PbI$_3$ under both low and high water concentrations using density functional theory. We find that water adsorption is heavily influenced by the orientation of the methylammonium cations close to the surface. It is demonstrated that, depending on methylammonium orientation, the water molecule can infiltrate into the hollow site of the surface and get trapped. Controlling dipole orientation via poling or interfacial engineering could thus enhance its moisture stability. We do not see a direct reaction between the water and methylammonium molecules. Furthermore, calculations with an implicit solvation model indicate that a higher water concentration may facilitate degradation.

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preprint2015arXiv

Rashba Spin-Orbit Coupling Enhanced Carrier Lifetime in Organometal Halide Perovskites

Organometal halide perovskites are promising solar-cell materials for next-generation photovoltaic applications. The long carrier lifetime and diffusion length of these materials make them very attractive for use in light absorbers and carrier transporters. While these aspects of organometal halide perovskites have attracted the most attention, the consequences of the Rashba effect, driven by strong spin-orbit coupling, on the photovoltaic properties of these materials are largely unexplored. In this work, taking the electronic structure of methylammonium lead iodide as an example, we propose an intrinsic mechanism for enhanced carrier lifetime in 3D Rashba materials. Based on first-principles calculations and a Rashba spin-orbit model, we demonstrate that the recombination rate is reduced due to the spin-forbidden transition. These results are important for understanding the fundamental physics of organometal halide perovskites and for optimizing and designing the materials with better performance. The proposed mechanism including spin degrees of freedom offers a new paradigm of using 3D Rashba materials for photovoltaic applications.

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preprint2015arXiv

Strain Induced Ferroelectric Topological Insulator

The simultaneous presence of seemingly incompatible properties of solids often provides a unique opportunity to address questions of fundamental and practical importance. The coexistence of ferroelectric and topological orders is one such example. Ferroelectrics, which have a spontaneous macroscopic polarization switchable by an applied electric field, usually are semiconductors with a well-developed wide band gap with a few exceptions. On the other hand, time-reversal symmetric $Z_2$ topological insulators (TI), characterized by robust metallic surface states protected by the topology of the bulk, usually are narrow-gap semiconductors ($< 0.7$ eV) which allow band inversion induced by the spin-orbit interaction. To date, a ferroelectric topological insulator (FETI) has remained elusive, owing to the seemingly contradictory characters of the ferroelectric and topological orders. Here, we report that the FETI can be realized in halide perovskite CsPbI$_3$ under strain. Our first-principles study reveals that a non-centrosymmetric ferroelectric structure of CsPbI$_3$ is energetically favored under a wide range of pressures, while maintaining its topological order. The proposed FETI is characterized by switchable polar surfaces with spin-momentum locked Dirac cones, which allows for electric-field control of topological surface states (TSSs) and the surface spin current. Our demonstration of a FETI in a feasible material opens doors for future studies combining ferroelectric and topological orders, and offers a new paradigm for diverse applications in electronics, spintronics, and quantum information.

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preprint2013arXiv

Exploration of the momentum of ferroelectric domain walls via molecular dynamics simulations

The motion of ferroelectric domain walls (DW) is critical for various technological applications of ferroelectric materials. One important question that is of interest both scientifically and technologically is whether the ferroelectric DW has momentum. To address this problem, we performed canonical ensemble molecular dynamics simulations of 180$^\circ$ and 90$^\circ$ DWs under applied electric field. Examination of the evolution of the polarization and local structure of DWs reveals that they stop moving after the removal of electric field. Thus, our computational study shows that ferroelectric domain walls do not have momentum.

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preprint2013arXiv

Reinterpretation of bond-valence model with bond-order formalism: an improved bond-valence based interatomic potential for PbTiO$_3$

We present a modified bond-valence model of PbTiO$_3$ based on the principles of bond-valence and bond-valence vector conservation. The relationship between the bond-valence model and the bond-order potential is derived analytically in the framework of a tight-binding model. A new energy term, bond-valence vector energy, is introduced into the atomistic model and the potential parameters are re-optimized. The new model potential can be applied both to canonical ensemble ($NVT$) and isobaric-isothermal ensemble ($NPT$) molecular dynamics (MD) simulations. This model reproduces the experimental phase transition in $NVT$ MD simulations and also exhibits the experimental sequence of temperature-driven and pressure-driven phase transitions in $NPT$ simulations. We expect that this improved bond-valence model can be applied to a broad range of inorganic materials.

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