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Steve M. Young

Steve M. Young appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallphysics.ins-detphysics.opticsquant-ph

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Published work

9 published item(s)

preprint2020arXiv

Design of High-Performance Photon Number Resolving Photodetectors Based on Coherently Interacting Nanoscale Elements

A number of applications in basic science and technology would benefit from high fidelity photon number resolving photodetectors. While some recent experimental progress has been made in this direction, the requirements for true photon number resolution are stringent, and no design currently exists that achieves this goal. Here we employ techniques from fundamental quantum optics to demonstrate that detectors composed of subwavelength elements interacting collectively with the photon field can achieve high-performance photon number resolution. We propose a new design that simultaneously achieves photon number resolution, high efficiency, low jitter, low dark counts, and high count rate. We discuss specific systems that satisfy the design requirements, pointing to the important role of nanoscale device elements.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Bulk photovoltaic effect enhancement via electrostatic control in layered ferroelectrics

The correlation between the shift current mechanism for the bulk photovoltaic effect (BPVE) and the structural and electronic properties of ferroelectric perovskite oxides is not well understood. Here, we study and engineer the shift current photovoltaic effect using a visible-light-absorbing ferroelectric Pb(Ni$_{x}$Ti$_{1-x}$)O$_{3-x}$ solid solution from first principles. We show that the covalent orbital character dicates the direction, magnitude, and onset energy of shift current in a predictable fashion. In particular, we find that the shift current response can be enhanced via electrostatic control in layered ferroelectrics, as bound charges face a stronger impetus to screen the electric field in a thicker material, delocalizing electron densities. This heterogeneous layered structure with alternative photocurrent generating and insulating layers is ideal for BPVE applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dirac Semimetals in Two Dimensions

Graphene is famous for being a host of 2D Dirac fermions. However, spin-orbit coupling introduces a small gap, so that graphene is formally a quantum spin hall insulator. Here we present symmetry-protected 2D Dirac semimetals, which feature Dirac cones at high-symmetry points that are \emph{not} gapped by spin-orbit interactions, and exhibit behavior distinct from both graphene and 3D Dirac semimetals. Using a two-site tight-binding model, we construct representatives of three possible distinct Dirac semimetal phases, and show that single symmetry-protected Dirac points are impossible in two dimensions. An essential role is played by the presence of non-symmorphic space group symmetries. We argue that these symmetries tune the system to the boundary between a 2D topological and trivial insulator. By breaking the symmetries we are able to access trivial and topological insulators as well as Weyl semimetal phases.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

First-principles materials design of high-performing bulk photovoltaics with the LiNbO$_3$ structure

The bulk photovoltaic effect is a long-known but poorly understood phenomenon. Recently, however, the multiferroic bismuth ferrite has been observed to produce strong photovoltaic response to visible light, suggesting that the effect has been underexploited as well. Here we present three polar oxides in the LiNbO$_3$ structure that we predict to have band gaps in the 1-2 eV range and very high bulk photovoltaic response: PbNiO$_3$, Mg$_{1/2}$Zn$_{1/2}$PbO$_3$, and LiBiO$_3$. All three have band gaps determined by cations with $d^{10}s^0$ electronic configurations, leading to conduction bands composed of cation $s$-orbitals and O $p$-orbitals. This both dramatically lowers the band gap and increases the bulk photovoltaic response by as much as an order of magnitude over previous materials, demonstrating the potential for high-performing bulk photovoltaics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Substantial optical dielectric enhancement by volume compression in LiAsSe$_2$

Based on first-principles calculations, we predict a substantial increase in the optical dielectric function of LiAsSe$_2$ under pressure. We find that the optical dielectric constant is enhanced threefold under volume compression. This enhancement is mainly due to the dimerization strength reduction of the one-dimensional (1D) As--Se chains in LiAsSe$_2$, which significantly alters the wavefunction phase mismatch between two neighboring chains and changes the transition intensity. By developing a tight-binding model of the interacting 1D chains, the essential features of the low-energy electronic structure of LiAsSe$_2$ are captured. Our findings are important for understanding the fundamental physics of LiAsSe$_2$ and provide a feasible way to enhance the material optical response that can be applied to light harvesting for energy applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-Principles Calculation of the Bulk Photovoltaic Effect in the Polar Compounds LiAsS$_\text{2}$, LiAsSe$_\text{2}$, and NaAsSe$_\text{2}$

We calculate the shift current response, which has been identified as the dominant mechanism for the bulk photovoltaic effect, for the polar compounds LiAsS$_\text{2}$, LiAsSe$_\text{2}$, and NaAsSe$_\text{2}$. We find that the magnitudes of the photovoltaic responses in the visible range for these compounds exceed the maximum response obtained for BiFeO$_\text{3}$ by 10 - 20 times. We correlate the high shift current response with the existence of $p$ states at both the valence and conduction band edges, as well as the dispersion of these bands, while also showing that high polarization is not a requirement. With low experimental band gaps of less than 2 eV and high shift current response, these materials have potential for use as bulk photovoltaics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Bulk Dirac points in distorted spinels

We report on a Dirac-like Fermi surface in three-dimensional bulk materials in a distorted spinel structure on the basis of density functional theory (DFT) as well as tight-binding theory. The four examples we provide in this paper are BiZnSiO4, BiCaSiO4, BiMgSiO4, and BiAlInO4. A necessary characteristic of these structures is that they contain a Bi lattice which forms a hierarchy of chain-like substructures, with consequences for both fundamental understanding and materials design.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

First principles calculations of the Shift Current Bulk Photovoltaic Effect in Ferroelectrics

We calculate the bulk photovoltaic response of the ferroelectrics BaTiO$_3$ and PbTiO$_3$ from first principles by applying "shift current" theory to the electronic structure from density functional theory. The first principles results for BaTiO$_3$ reproduce eperimental photocurrent direction and magnitude as a function of light frequency, as well as the dependence of current on light polarization, demonstrating that shift current is the dominant mechanism of the bulk photovoltaic effect in BaTiO$_3$. Additionally, we analyze the relationship between response and material properties in detail. The photocurrent does not depend simply or strongly on the magnitude of material polarization, as has been previously assumed; instead, electronic states with delocalized, covalent bonding that is highly asymmetric along the current direction are required for strong shift current enhancements. The complexity of the response dependence on both external and material parameters suggests applications not only in solar energy conversion, but to photocatalysis and sensor and switch type devices as well.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theoretical investigation of the evolution of the topological phase of Bi$_{2}$Se$_{3}$ under mechanical strain

The topological insulating phase results from inversion of the band gap due to spin-orbit coupling at an odd number of time-reversal symmetric points. In Bi$_2$Se$_3$, this inversion occurs at the $Γ$ point. For bulk Bi$_2$Se$_3$, we have analyzed the effect of arbitrary strain on the $Γ$ point band gap using Density Functional Theory. By computing the band structure both with and without spin-orbit interactions, we consider the effects of strain on the gap via Coulombic interaction and spin-orbit interaction separately. While compressive strain acts to decrease the Coulombic gap, it also increases the strength of the spin-orbit interaction, increasing the inverted gap. Comparison with Bi$_2$Te$_3$ supports the conclusion that effects on both Coulombic and spin-orbit interactions are critical to understanding the behavior of topological insulators under strain, and we propose that the topological insulating phase can be effectively manipulated by inducing strain through chemical substitution.

0 citations0 reviewsNo code linkedOpen access