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Andrei Velichko

Andrei Velichko contributes to research discovery and scholarly infrastructure.

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Published work

17 published item(s)

preprint2026arXiv

FEG-Pro: Forecast-Error Growth Profiling for Finite-Horizon Instability Analysis of Nonlinear Time Series

Estimating the largest Lyapunov exponent from a scalar time series is difficult when the governing equations, tangent dynamics, and full state vector are unavailable. We propose FEG-Pro, a forecast-error growth profiling framework for nonlinear scalar time series. The method constructs autocorrelation-guided sparse histories, performs distance-weighted k-nearest-neighbor multi-horizon forecasting, and analyzes the logarithmic growth of geometrically averaged forecast errors. Its primary output is the finite-horizon forecast-error growth slope, lambda_FEG. When the error-growth curve supports a quasi-linear regime, this slope can be compared with reference largest Lyapunov exponents as an estimate of the dominant instability rate. The same pipeline also extracts the formal fit-selection regime, curvature, residual roughness after quadratic detrending, monotonicity, and forecast-error distribution entropy (FEDE) from signed multi-horizon errors. These secondary descriptors are intended not only as diagnostic controls for the slope, but also as candidate machine-learning features for nonlinear signal analysis, because they encode profile geometry and distributional uncertainty not captured by lambda_FEG alone. We evaluate the method on chaotic maps, Mackey-Glass delay dynamics, and scalar Lorenz-63 observables with known or reference exponents. Full-record experiments show good agreement in quasi-linear cases and meaningful curve-shape information in curved or weak profiles. A dyadic length-halving experiment on representative logistic, Mackey-Glass, and Lorenz records shows that residual roughness and mean FEDE often change monotonically and remain interpretable as record length decreases, even when the slope becomes biased or highly variable. The results support treating forecast-error growth as a structured profile and feature-generation framework rather than a single-number estimator.

preprint2022arXiv

A Method for Estimating the Entropy of Time Series Using Artificial Neural Networks

Measuring the predictability and complexity of time series using entropy is essential tool de-signing and controlling a nonlinear system. However, the existing methods have some drawbacks related to the strong dependence of entropy on the parameters of the methods. To overcome these difficulties, this study proposes a new method for estimating the entropy of a time series using the LogNNet neural network model. The LogNNet reservoir matrix is filled with time series elements according to our algorithm. The accuracy of the classification of images from the MNIST-10 database is considered as the entropy measure and denoted by NNetEn. The novelty of entropy calculation is that the time series is involved in mixing the input information in the res-ervoir. Greater complexity in the time series leads to a higher classification accuracy and higher NNetEn values. We introduce a new time series characteristic called time series learning inertia that determines the learning rate of the neural network. The robustness and efficiency of the method is verified on chaotic, periodic, random, binary, and constant time series. The comparison of NNetEn with other methods of entropy estimation demonstrates that our method is more robust and accurate and can be widely used in practice.

preprint2022arXiv

An improved LogNNet classifier for IoT application

In the age of neural networks and Internet of Things (IoT), the search for new neural network architectures capable of operating on devices with limited computing power and small memory size is becoming an urgent agenda. Designing suitable algorithms for IoT applications is an important task. The paper proposes a feed forward LogNNet neural network, which uses a semi-linear Henon type discrete chaotic map to classify MNIST-10 dataset. The model is composed of reservoir part and trainable classifier. The aim of the reservoir part is transforming the inputs to maximize the classification accuracy using a special matrix filing method and a time series generated by the chaotic map. The parameters of the chaotic map are optimized using particle swarm optimization with random immigrants. As a result, the proposed LogNNet/Henon classifier has higher accuracy and the same RAM usage, compared to the original version of LogNNet, and offers promising opportunities for implementation in IoT devices. In addition, a direct relation between the value of entropy and accuracy of the classification is demonstrated.

preprint2022arXiv

Diagnosis and Prognosis of COVID-19 Disease Using Routine Blood Values and LogNNet Neural Network

Since February 2020, the world has been engaged in an intense struggle with the COVID-19 dis-ease, and health systems have come under tragic pressure as the disease turned into a pandemic. The aim of this study is to obtain the most effective routine blood values (RBV) in the diagnosis and prognosis of COVID-19 using a backward feature elimination algorithm for the LogNNet reservoir neural network. The first dataset in the study consists of a total of 5296 patients with the same number of negative and positive COVID-19 tests. The LogNNet-model achieved the accuracy rate of 99.5% in the diagnosis of the disease with 46 features and the accuracy of 99.17% with only mean corpuscular hemoglobin concentration, mean corpuscular hemoglobin, and activated partial prothrombin time. The second dataset consists of a total of 3899 patients with a diagnosis of COVID-19 who were treated in hospital, of which 203 were severe patients and 3696 were mild patients. The model reached the accuracy rate of 94.4% in determining the prognosis of the disease with 48 features and the accuracy of 82.7% with only erythrocyte sedimentation rate, neutrophil count, and C reactive protein features. Our method will reduce the negative pressures on the health sector and help doctors to understand the pathogenesis of COVID-19 using the key features. The method is promising to create mobile health monitoring systems in the Internet of Things.

preprint2020arXiv

Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method

Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be due to the semiconductor-to-metal phase transition (SMPT) in vanadium dioxide. The shift of the switching threshold voltage, accompanied by the memory effect, in forward bias of the p-Si-VO2 anisotype heterojunction is observed. To explain this effect, a model is proposed which suggests the existence of an additional series resistance associated with a channel at the VO2/Si interface, where a SiOx layer forms during the VO2 deposition process. This resistance is responsible for both threshold switching characteristics, and the memory effect, and the oxygen ion electromigration process is shown to underlie this effect. Potential applications of the observed phenomena, combining the effects of ReRAM and SMPT, in oxide electronics are discussed.

preprint2020arXiv

Electrical and optical properties of hydrated amorphous vanadium oxide

Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte occurs. Metal-insulator transition in amorphous HxVO2 is found to be preserved up to high concentration (x ~ 1.5) of hydrogen. Memory switching with the N-type negative differential resistance, associated with the H+ ionic transfer, is observed in "V/hydrated amorphous vanadium oxide/Au" sandwich structures.

preprint2020arXiv

Electrical conductivity of vanadium dioxide switching channel

The electrical conductivity of the switching channel of vanadium dioxide thin-film sandwich structures is studied over a wide temperature range (15-300 K). It is shown that the electrical resistance of the channel varies with temperature as R~exp(aT-b/T) in the high-temperature region (above 70 K). The experimental results are discussed from the viewpoint of the small polaron hopping conduction theory which takes into account the influence of thermal lattice vibrations onto the resonance integral.

preprint2020arXiv

Electrical switching and oscillations in vanadium dioxide

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10*10 nm, Fmax can reach the value of 300 MHz at a film thickness of ~20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts ~13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns ~ 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1 to 5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

preprint2020arXiv

Higher Order and Long-Range Synchronization Effects for Classification and Computing in Oscillator-Based Spiking Neural Networks

In the circuit of two thermally coupled VO2 oscillators, we studied a higher order synchronization effect, which can be used in object classification techniques to increase the number of possible synchronous states of the oscillator system. We developed the phase-locking estimation method to determine the values of subharmonic ratio and synchronization effectiveness. In our experiment, the number of possible synchronous states of the oscillator system was twelve, and subharmonic ratio distributions were shaped as Arnold's tongues. In the model, the number of states may reach the maximum value of 150 at certain levels of coupling strength and noise. The long-range synchronization effect in a one-dimensional chain of oscillators occurs even at low values of synchronization effectiveness for intermediate links. We demonstrate a technique for storing and recognizing vector images, which can used for reservoir computing. In addition, we present the implementation of analog operation of multiplication, the synchronization based logic for binary computations, and the possibility to develop the interface between spike neural network and a computer. Based on the universal physical effects, the high order synchronization can be applied to any spiking oscillators with any coupling type, enhancing the practical value of the presented results to expand spike neural network capabilities.

preprint2020arXiv

Influence of doping on the properties of vanadium oxide gel films

Effect of doping with H and W on the properties of V2O5 and VO2 derived from V2O5 gel has been studied. It is shown that the treatment of V2O5 in low-temperature RF hydrogen plasma for 1 to 10 min. leads to either hydration of vanadium pentoxide or its reduction (depending on the treatment conditions) to lower vanadium oxides. For some samples, which are subject to plasma treatment in the discharge active zone, a non-ordinary temperature dependence of resistance, with a maxi-mum at T ~ 100 K, is observed. For W-doped VO2 films, it is shown that substitution of V4+ with W6+ results in a decrease of the temperature of metal-insulator transition. Also, it has been shown that the doping of the initial films with ~3 at.% of W reduces the statistical scatter in the thresh-old parameters of the switching devices with S-shaped I-V characteristics on the basis of V2O5 gel films.

preprint2020arXiv

Neural Network for Low-Memory IoT Devices and MNIST Image Recognition Using Kernels Based on Logistic Map

This study presents a neural network which uses filters based on logistic mapping (LogNNet). LogNNet has a feedforward network structure, but possesses the properties of reservoir neural networks. The input weight matrix, set by a recurrent logistic mapping, forms the kernels that transform the input space to the higher-dimensional feature space. The most effective recognition of a handwritten digit from MNIST-10 occurs under chaotic behavior of the logistic map. The correlation of classification accuracy with the value of the Lyapunov exponent was obtained. An advantage of LogNNet implementation on IoT devices is the significant savings in memory used. At the same time, LogNNet has a simple algorithm and performance indicators comparable to those of the best resource-efficient algorithms available at the moment. The presented network architecture uses an array of weights with a total memory size from 1 to 29 kB and achieves a classification accuracy of 80.3-96.3%. Memory is saved due to the processor, which sequentially calculates the required weight coefficients during the network operation using the analytical equation of the logistic mapping. The proposed neural network can be used in implementations of artificial intelligence based on constrained devices with limited memory, which are integral blocks for creating ambient intelligence in modern IoT environments. From a research perspective, LogNNet can contribute to the understanding of the fundamental issues of the influence of chaos on the behavior of reservoir-type neural networks.

preprint2020arXiv

Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications

Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental results on threshold switching in a number of various transition metal (V, Ti, Fe, Nb, Mo, W, Hf, Zr, Mn, Y, and Ta) oxide films obtained by anodic oxidation. Then, the results concerning the effects of bistable resistive switching in MOM and MOS structures on the basis of such oxides as V2O5, Nb2O5, and NiO are presented. It is shown that sandwich structures on the basis of the Au/V2O5/SiO2/Si, Nb/Nb2O5/Au, and Pt/NiO/Pt can be used as memory elements for ReRAM applications. Finally, model approximations are developed in order to describe theoretically the effect of nonvolatile unipolar switching in Pt NiO-Pt structures.

preprint2020arXiv

Switching dynamics of single and coupled VO2-based oscillators as elements of neural networks

In the present paper, we report on the switching dynamics of both single and coupled VO2-based oscillators, with resistive and capacitive coupling, and explore the capability of their application in oscillatory neural networks. Based on these results, we further select an adequate SPICE model to describe the modes of operation of coupled oscillator circuits. Physical mechanisms influencing the time of forward and reverse electrical switching, that determine the applicability limits of the proposed model, are identified. For the resistive coupling, it is shown that synchronization takes place at a certain value of the coupling resistance, though it is unstable and a synchronization failure occurs periodically. For the capacitive coupling, two synchronization modes, with weak and strong coupling, are found. The transition between these modes is accompanied by chaotic oscillations. A decrease in the width of the spectrum harmonics in the weak-coupling mode, and its increase in the strong-coupling one, is detected. The dependences of frequencies and phase differences of the coupled oscillatory circuits on the coupling capacitance are found. Examples of operation of coupled VO2 oscillators as a central pattern generator are demonstrated.

preprint2020arXiv

Thermal coupling and effect of subharmonic synchronization in a system of two VO2 based oscillators

We explore a prototype of an oscillatory neural network (ONN) based on vanadium dioxide switching devices. The model system under study represents two oscillators based on thermally coupled VO2 switches. Numerical simulation shows that the effective action radius RTC of coupling depends both on the total energy released during switching and on the average power. It is experimentally and numerically proved that the temperature change dT commences almost synchronously with the released power peak and T-coupling reveals itself up to a frequency of about 10 kHz. For the studied switching structure configuration, the RTC value varies over a wide range from 4 to 45 mkm, depending on the external circuit capacitance C and resistance Ri, but the variation of Ri is more promising from the practical viewpoint. In the case of a "weak" coupling, synchronization is accompanied by attraction effect and decrease of the main spectra harmonics width. In the case of a "strong" coupling, the number of effects increases, synchronization can occur on subharmonics resulting in multilevel stable synchronization of two oscillators. An advanced algorithm for synchronization efficiency and subharmonic ratio calculation is proposed. It is shown that of the two oscillators the leading one is that with a higher main frequency, and, in addition, the frequency stabilization effect is observed. Also, in the case of a strong thermal coupling, the limit of the supply current parameters, for which the oscillations exist, expands by ~ 10 %. The obtained results have a universal character and open up a new kind of coupling in ONNs, namely, T-coupling, which allows for easy transition from 2D to 3D integration. The effect of subharmonic synchronization hold promise for application in classification and pattern recognition.

preprint2020arXiv

UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films

We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy

preprint2020arXiv

Vanadium oxide thin films and fibers obtained by acetylacetonate sol-gel method

Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol-gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO2 phase is chosen: 1) 25-550 C and 2) 550-600 C. The obtained films demonstrate the metal-insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied.

preprint2019arXiv

Oscillator Circuit for Spike Neural Network with Sigmoid Like Activation Function and Firing Rate Coding

The study presents an oscillator circuit for a spike neural network with the possibility of firing rate coding and sigmoid-like activation function. The circuit contains a switching element with an S-shaped current-voltage characteristic and two capacitors; one of the capacitors is shunted by a control resistor. The circuit is characterised by a strong dependence of the frequency of relaxation oscillations on the magnitude of the control resistor. The dependence has a sigmoid-like form and we present an analytical method for dependence calculation. Finally, we describe the concept of the spike neural network architecture with firing rate coding based on the presented circuit for creating neuromorphic devices and artificial intelligence.