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Vadim Putrolaynen

Vadim Putrolaynen contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2020arXiv

Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method

Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be due to the semiconductor-to-metal phase transition (SMPT) in vanadium dioxide. The shift of the switching threshold voltage, accompanied by the memory effect, in forward bias of the p-Si-VO2 anisotype heterojunction is observed. To explain this effect, a model is proposed which suggests the existence of an additional series resistance associated with a channel at the VO2/Si interface, where a SiOx layer forms during the VO2 deposition process. This resistance is responsible for both threshold switching characteristics, and the memory effect, and the oxygen ion electromigration process is shown to underlie this effect. Potential applications of the observed phenomena, combining the effects of ReRAM and SMPT, in oxide electronics are discussed.

preprint2020arXiv

Electrical and optical properties of hydrated amorphous vanadium oxide

Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte occurs. Metal-insulator transition in amorphous HxVO2 is found to be preserved up to high concentration (x ~ 1.5) of hydrogen. Memory switching with the N-type negative differential resistance, associated with the H+ ionic transfer, is observed in "V/hydrated amorphous vanadium oxide/Au" sandwich structures.

preprint2020arXiv

Electrical switching and oscillations in vanadium dioxide

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10*10 nm, Fmax can reach the value of 300 MHz at a film thickness of ~20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts ~13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns ~ 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1 to 5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

preprint2020arXiv

Higher Order and Long-Range Synchronization Effects for Classification and Computing in Oscillator-Based Spiking Neural Networks

In the circuit of two thermally coupled VO2 oscillators, we studied a higher order synchronization effect, which can be used in object classification techniques to increase the number of possible synchronous states of the oscillator system. We developed the phase-locking estimation method to determine the values of subharmonic ratio and synchronization effectiveness. In our experiment, the number of possible synchronous states of the oscillator system was twelve, and subharmonic ratio distributions were shaped as Arnold's tongues. In the model, the number of states may reach the maximum value of 150 at certain levels of coupling strength and noise. The long-range synchronization effect in a one-dimensional chain of oscillators occurs even at low values of synchronization effectiveness for intermediate links. We demonstrate a technique for storing and recognizing vector images, which can used for reservoir computing. In addition, we present the implementation of analog operation of multiplication, the synchronization based logic for binary computations, and the possibility to develop the interface between spike neural network and a computer. Based on the universal physical effects, the high order synchronization can be applied to any spiking oscillators with any coupling type, enhancing the practical value of the presented results to expand spike neural network capabilities.

preprint2020arXiv

Switching dynamics of single and coupled VO2-based oscillators as elements of neural networks

In the present paper, we report on the switching dynamics of both single and coupled VO2-based oscillators, with resistive and capacitive coupling, and explore the capability of their application in oscillatory neural networks. Based on these results, we further select an adequate SPICE model to describe the modes of operation of coupled oscillator circuits. Physical mechanisms influencing the time of forward and reverse electrical switching, that determine the applicability limits of the proposed model, are identified. For the resistive coupling, it is shown that synchronization takes place at a certain value of the coupling resistance, though it is unstable and a synchronization failure occurs periodically. For the capacitive coupling, two synchronization modes, with weak and strong coupling, are found. The transition between these modes is accompanied by chaotic oscillations. A decrease in the width of the spectrum harmonics in the weak-coupling mode, and its increase in the strong-coupling one, is detected. The dependences of frequencies and phase differences of the coupled oscillatory circuits on the coupling capacitance are found. Examples of operation of coupled VO2 oscillators as a central pattern generator are demonstrated.

preprint2020arXiv

Thermal coupling and effect of subharmonic synchronization in a system of two VO2 based oscillators

We explore a prototype of an oscillatory neural network (ONN) based on vanadium dioxide switching devices. The model system under study represents two oscillators based on thermally coupled VO2 switches. Numerical simulation shows that the effective action radius RTC of coupling depends both on the total energy released during switching and on the average power. It is experimentally and numerically proved that the temperature change dT commences almost synchronously with the released power peak and T-coupling reveals itself up to a frequency of about 10 kHz. For the studied switching structure configuration, the RTC value varies over a wide range from 4 to 45 mkm, depending on the external circuit capacitance C and resistance Ri, but the variation of Ri is more promising from the practical viewpoint. In the case of a "weak" coupling, synchronization is accompanied by attraction effect and decrease of the main spectra harmonics width. In the case of a "strong" coupling, the number of effects increases, synchronization can occur on subharmonics resulting in multilevel stable synchronization of two oscillators. An advanced algorithm for synchronization efficiency and subharmonic ratio calculation is proposed. It is shown that of the two oscillators the leading one is that with a higher main frequency, and, in addition, the frequency stabilization effect is observed. Also, in the case of a strong thermal coupling, the limit of the supply current parameters, for which the oscillations exist, expands by ~ 10 %. The obtained results have a universal character and open up a new kind of coupling in ONNs, namely, T-coupling, which allows for easy transition from 2D to 3D integration. The effect of subharmonic synchronization hold promise for application in classification and pattern recognition.

preprint2020arXiv

UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films

We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy