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Source author record

Ali Javey

Ali Javey appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.opticscond-matphysics.app-phphysics.ins-detquant-ph

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Published work

18 published item(s)

preprint2026arXiv

Forbidden second harmonics in centrosymmetric bilayer crystals

Optical spectroscopy based on second-order nonlinearity is a critical technique for characterizing two-dimensional (2D) crystals as well as bioimaging and quantum optics. It is generally believed that second-harmonic generation (SHG) in centrosymmetric crystals, such as graphene and other bilayer 2D crystals, is negligible without externally breaking the inversion symmetry. Here, we show that with a new homodyne detection technique, we can apparently circumvent this symmetry-imposed constraint and observe robust SHG in pristine centrosymmetric crystals, without any symmetry-breaking field. With its exceptional sensitivity, we resolve polarization-resolved SHG in bilayer hexagonal boron nitride (h-BN), bilayer 2H-WSe$_2$, and remarkably, Bernal-stacked bilayer graphene, allowing us to unambiguously identify the crystallographic orientation in these crystals via SHG for the first time. We also demonstrate that the new technique can be used to non-invasively detect uniaxial strain and optical geometric phase in these crystals. The observed SHG in our experiments is attributed to second-order nonlinearity in the quadrupole channel, which is controlled by the presence of the $C_2$ symmetry instead of the inversion symmetry. Our new technique expands the capability of nonlinear optical spectroscopy to encompass a large class of centrosymmetric materials that could never be measured before, and can be used for quantum sensing of moiré materials and twisted epitaxial films.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Platform-agnostic waveguide integration of high-speed photodetectors with evaporated tellurium thin films

Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here we address the problem of scalably integrating photodetectors in a photonic platform-independent manner. Using a thermal evaporation and deposition technique developed for nanoelectronics, we show that tellurium (Te), a quasi-2D semi-conductive element, can be evaporated at low temperature directly onto photonic chips to form air-stable, high-responsivity, high-speed, ultrawide-band photodetectors. We demonstrate detection at visible, telecom, and mid-infrared wavelengths, a bandwidth of more than 40 GHz, and platform-independent scalable integration with photonic structures in silicon, silicon nitride and lithium niobate.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Compliant substrate epitaxy: Au on MoS$_2$

The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to the energy, and the compliance of the first layer of the MoS$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ~250 cm2/Vs, perfect subthreshold swing of ~60 mV/dec, and ION/IOFF of >10^6 at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work function Pd contacts along with degenerate surface doping of the contacts by patterned NO2 chemisorption on WSe2. The results here present a promising material system and device architecture for p-type monolayer transistors with excellent characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires

Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude,[9] often resulting in the low efficiency (a few percent or less) of nanowire-based solar cells. [7, 8, 10, 11] Reducing the recombination by surface passivation is crucial for the realization of high performance nanosized optoelectronic devices, but remains largely unexplored. [7, 12-14] Here we show that a thin layer of amorphous silicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW), forming a core-shell structure in-situ in the vapor-liquid-solid (VLS) process, reduces the surface recombination nearly two orders of magnitude. Under illumination of modulated light, we measure a greater than 90-fold improvement in the photosensitivity of individual core-shell nanowires, compared to regular nanowires without shell. Simulations of the optical absorption of the nanowires indicate that the strong absorption of the a-Si shell contributes to this effect, but we conclude that the effect is mainly due to the enhanced carrier lifetime by surface passivation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Highly Quantum-Confined InAs Nanoscale Membranes

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μm.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer doping of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and non-contact sheet resistance measurements. It is found that the majority (~70%) of the incorporated dopants are electrically active, therefore, enabling a low sheet resistance for a given dopant areal dose. The wafer-scale uniformity is investigated and found to be limited by the temperature homogeneity of the spike anneal tool used in the experiments. Notably, minimal junction leakage currents (<1 uA/cm2) are observed which highlights the quality of the junctions formed by this process. The results clearly demonstrate the versatility and potency of the monolayer doping approach for enabling controlled, molecular-scale ultrashallow junction formation without introducing defects in the semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Diameter-Dependent Electron Mobility of InAs Nanowires

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters < ~ 1.0 nm possibly due to tunnel barriers.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm and bandgap ~ 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70mV/decade, negligible ambipolar conduction and high on/off ratios up to 10^6 at a bias voltage of 0.5V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Ballistic Transport in Metallic Nanotubes With Reliable Pd Ohmic Contacts

Contacting metallic single-walled carbon nanotubes by palladium (Pd) affords highly reproducible ohmic contacts and allows for detailed elucidation of ballistic transport in metallic nanotubes. The Pd ohmic contacts are more reliable than titanium (Ti) previously used for ballistic nanotube devices. In contrast, Pt contacts appear to give non-ohmic contacts to metallic nanotubes. For both ohmic and non-ohmic contacts, the length of the nanotube under the metal contact area is electrically turned off. Transport occurs from metal to nanotube at the edges of the contacts. Measurements with large numbers of Pd contacted nanotube samples reveal that the mean free path for defect scattering in SWNTs grown by chemical vapor deposition can be up to 4 microns. The mean free paths for acoustic phonon scattering are on the order of 500 nm at room temperature and >> 4 microns at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with metal source/drain, or devices commonly referred to as Schottky barrier FETs.

0 citations0 reviewsNo code linkedOpen access