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Hui Fang

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Published work

13 published item(s)

preprint2022arXiv

LP-UIT: A Multimodal Framework for Link Prediction in Social Networks

With the rapid information explosion on online social network sites (SNSs), it becomes difficult for users to seek new friends or broaden their social networks in an efficient way. Link prediction, which can effectively conquer this problem, has thus attracted wide attention. Previous methods on link prediction fail to comprehensively capture the factors leading to new link formation: 1) few models have considered the varied impacts of users' short-term and long-term interests on link prediction. Besides, they fail to jointly model the influence from social influence and "weak links"; 2) considering that different factors should be derived from information sources of different modalities, there is a lack of effective multi-modal framework for link prediction. In this view, we propose a novel multi-modal framework for link prediction (referred as LP-UIT) which fuses a comprehensive set of features (i.e., user information and topological features) extracted from multi-modal information (i.e., textual information, graph information, and numerical information). Specifically, we adopt graph convolutional network to process the network information to capture topological features, employ natural language processing techniques (i.e., TF-IDF and word2Vec) to model users' short-term and long-term interests, and identify social influence and "weak links" from numerical features. We further use an attention mechanism to model the relationship between textual and topological features. Finally, a multi-layer perceptron (MLP) is designed to combine the representations from three modalities for link prediction. Extensive experiments on two real-world datasets demonstrate the superiority of LP-UIT over the state-of-the-art methods.

preprint2022arXiv

MuSCLe: A Multi-Strategy Contrastive Learning Framework for Weakly Supervised Semantic Segmentation

Weakly supervised semantic segmentation (WSSS) has gained significant popularity since it relies only on weak labels such as image level annotations rather than pixel level annotations required by supervised semantic segmentation (SSS) methods. Despite drastically reduced annotation costs, typical feature representations learned from WSSS are only representative of some salient parts of objects and less reliable compared to SSS due to the weak guidance during training. In this paper, we propose a novel Multi-Strategy Contrastive Learning (MuSCLe) framework to obtain enhanced feature representations and improve WSSS performance by exploiting similarity and dissimilarity of contrastive sample pairs at image, region, pixel and object boundary levels. Extensive experiments demonstrate the effectiveness of our method and show that MuSCLe outperforms the current state-of-the-art on the widely used PASCAL VOC 2012 dataset.

preprint2022arXiv

Visualization for Epidemiological Modelling: Challenges, Solutions, Reflections & Recommendations

We report on an ongoing collaboration between epidemiological modellers and visualization researchers by documenting and reflecting upon knowledge constructs -- a series of ideas, approaches and methods taken from existing visualization research and practice -- deployed and developed to support modelling of the COVID-19 pandemic. Structured independent commentary on these efforts is synthesized through iterative reflection to develop: evidence of the effectiveness and value of visualization in this context; open problems upon which the research communities may focus; guidance for future activity of this type; and recommendations to safeguard the achievements and promote, advance, secure and prepare for future collaborations of this kind. In describing and comparing a series of related projects that were undertaken in unprecedented conditions, our hope is that this unique report, and its rich interactive supplementary materials, will guide the scientific community in embracing visualization in its observation, analysis and modelling of data as well as in disseminating findings. Equally we hope to encourage the visualization community to engage with impactful science in addressing its emerging data challenges. If we are successful, this showcase of activity may stimulate mutually beneficial engagement between communities with complementary expertise to address problems of significance in epidemiology and beyond. https://ramp-vis.github.io/RAMPVIS-PhilTransA-Supplement/

preprint2021arXiv

Analysis of an adaptive lead weighted ResNet for multiclass classification of 12-lead ECGs

Background: Twelve lead ECGs are a core diagnostic tool for cardiovascular diseases. Here, we describe and analyse an ensemble deep neural network architecture to classify 24 cardiac abnormalities from 12-lead ECGs. Method: We proposed a squeeze and excite ResNet to automatically learn deep features from 12-lead ECGs, in order to identify 24 cardiac conditions. The deep features were augmented with age and gender features in the final fully connected layers. Output thresholds for each class were set using a constrained grid search. To determine why the model made incorrect predictions, two expert clinicians independently interpreted a random set of 100 misclassified ECGs concerning Left Axis Deviation. Results: Using the bespoke weighted accuracy metric, we achieved a 5-fold cross validation score of 0.684, and sensitivity and specificity of 0.758 and 0.969, respectively. We scored 0.520 on the full test data, and ranked 2nd out of 41 in the official challenge rankings. On a random set of misclassified ECGs, agreement between two clinicians and training labels was poor (clinician 1: kappa = -0.057, clinician 2: kappa = -0.159). In contrast, agreement between the clinicians was very high (kappa = 0.92). Discussion: The proposed prediction model performed well on the validation and hidden test data in comparison to models trained on the same data. We also discovered considerable inconsistency in training labels, which is likely to hinder development of more accurate models.

preprint2020arXiv

Covidex: Neural Ranking Models and Keyword Search Infrastructure for the COVID-19 Open Research Dataset

We present Covidex, a search engine that exploits the latest neural ranking models to provide information access to the COVID-19 Open Research Dataset curated by the Allen Institute for AI. Our system has been online and serving users since late March 2020. The Covidex is the user application component of our three-pronged strategy to develop technologies for helping domain experts tackle the ongoing global pandemic. In addition, we provide robust and easy-to-use keyword search infrastructure that exploits mature fusion-based methods as well as standalone neural ranking models that can be incorporated into other applications. These techniques have been evaluated in the ongoing TREC-COVID challenge: Our infrastructure and baselines have been adopted by many participants, including some of the highest-scoring runs in rounds 1, 2, and 3. In round 3, we report the highest-scoring run that takes advantage of previous training data and the second-highest fully automatic run.

preprint2020arXiv

Joint Bilateral Learning for Real-time Universal Photorealistic Style Transfer

Photorealistic style transfer is the task of transferring the artistic style of an image onto a content target, producing a result that is plausibly taken with a camera. Recent approaches, based on deep neural networks, produce impressive results but are either too slow to run at practical resolutions, or still contain objectionable artifacts. We propose a new end-to-end model for photorealistic style transfer that is both fast and inherently generates photorealistic results. The core of our approach is a feed-forward neural network that learns local edge-aware affine transforms that automatically obey the photorealism constraint. When trained on a diverse set of images and a variety of styles, our model can robustly apply style transfer to an arbitrary pair of input images. Compared to the state of the art, our method produces visually superior results and is three orders of magnitude faster, enabling real-time performance at 4K on a mobile phone. We validate our method with ablation and user studies.

preprint2019arXiv

Research Commentary on Recommendations with Side Information: A Survey and Research Directions

Recommender systems have become an essential tool to help resolve the information overload problem in recent decades. Traditional recommender systems, however, suffer from data sparsity and cold start problems. To address these issues, a great number of recommendation algorithms have been proposed to leverage side information of users or items (e.g., social network and item category), demonstrating a high degree of effectiveness in improving recommendation performance. This Research Commentary aims to provide a comprehensive and systematic survey of the recent research on recommender systems with side information. Specifically, we provide an overview of state-of-the-art recommendation algorithms with side information from two orthogonal perspectives. One involves the different methodologies of recommendation: the memory-based methods, latent factor, representation learning, and deep learning models. The others cover different representations of side information, including structural data (flat, network, and hierarchical features, and knowledge graphs); and non-structural data (text, image and video features). Finally, we discuss challenges and provide new potential directions in recommendation, along with the conclusion of this survey.

preprint2014arXiv

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties.

preprint2014arXiv

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.

preprint2012arXiv

High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ~250 cm2/Vs, perfect subthreshold swing of ~60 mV/dec, and ION/IOFF of >10^6 at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work function Pd contacts along with degenerate surface doping of the contacts by patterned NO2 chemisorption on WSe2. The results here present a promising material system and device architecture for p-type monolayer transistors with excellent characteristics.

preprint2012arXiv

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

preprint2011arXiv

Highly Quantum-Confined InAs Nanoscale Membranes

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors.

preprint2011arXiv

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μm.