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Alexander Brinkman

Alexander Brinkman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.supr-con cond-mat.mtrl-sci Computer Vision cond-mat.stat-mech cond-mat.str-el quant-ph Robotics

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preprint2023arXiv

Topological information device operating at the Landauer limit

We propose and theoretically investigate a novel Maxwell's demon implementation based on the spin-momentum locking property of topological matter. We use nuclear spins as a memory resource which provides the advantage of scalability. We show that this topological information device can ideally operate at the Landauer limit; the heat dissipation required to erase one bit of information stored in the demon's memory approaches $k_B T\ln2$. Furthermore, we demonstrate that all available energy, $k_B T\ln2$ per one bit of information, can be extracted in the form of electrical work. Finally, we find that the current-voltage characteristics of topological information device satisfy the conditions of an ideal memristor.

preprint2021arXiv

Rover Relocalization for Mars Sample Return by Virtual Template Synthesis and Matching

We consider the problem of rover relocalization in the context of the notional Mars Sample Return campaign. In this campaign, a rover (R1) needs to be capable of autonomously navigating and localizing itself within an area of approximately 50 x 50 m using reference images collected years earlier by another rover (R0). We propose a visual localizer that exhibits robustness to the relatively barren terrain that we expect to find in relevant areas, and to large lighting and viewpoint differences between R0 and R1. The localizer synthesizes partial renderings of a mesh built from reference R0 images and matches those to R1 images. We evaluate our method on a dataset totaling 2160 images covering the range of expected environmental conditions (terrain, lighting, approach angle). Experimental results show the effectiveness of our approach. This work informs the Mars Sample Return campaign on the choice of a site where Perseverance (R0) will place a set of sample tubes for future retrieval by another rover (R1).

preprint2020arXiv

Reducing electronic transport dimension to topological hinge states by increasing geometry size of Dirac semimetal Josephson junctions

The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd3As2 is predicted to be a higher-order topological semimetal, possessing three-dimensional (3D) bulk Dirac fermions, two-dimensional (2D) Fermi arcs, and one-dimensional (1D) hinge states. These topological states have different characteristic length scales in electronic transport, allowing to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd3As2-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding the higher-order topological phase in a 3D Dirac semimetal.

preprint2019arXiv

Josephson Effect and Charge Distribution in Thin Bi$_2$Te$_3$ Topological Insulators

Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, we study the Josephson effect, magnetotransport, and weak anti-localization in bottom-gated thin Bi$_2$Te$_3$ topological insulator films.We compare the experimental carrier densities to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and find excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.

preprint2016arXiv

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ thin films. Using a back-gate, the carrier density is tuned by a factor of $\sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of $\sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.

preprint2014arXiv

Critical behavior at the dynamic Mott transition

We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott insulator where magnetic field-induced vortices are frozen in the dimples of the egg crate potential by their strong repulsion interaction is discovered. We find an insulator-to-metal transition driven by the applied electric current and determine critical exponents that exhibit striking similarity with the common thermodynamic liquid-gas transition. A simple and straightforward quantum mechanical picture is proposed that describes both tunneling dynamics in the deep insulating state and the observed scaling behavior in the vicinity of the critical point. Our findings offer a comprehensive description of dynamic Mott critical behavior and establish a deep connection between equilibrium and nonequilibrium phase transitions.