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Martin P. Stehno

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cond-mat.mes-hall cond-mat.supr-con cond-mat.mtrl-sci quant-ph

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preprint2022arXiv

Finite field transport response of a dilute magnetic topological insulator based Josephson junction

Hybrid samples combining superconductors with magnetic topological insulators are a promising platform for exploring exotic new transport physics. We examine a Josephson junction of such a system, based on the dilute magnetic topological insulator (Hg,Mn)Te and the type II superconductor MoRe. In the zero and very low field limit, to the best of our knowledge, the device shows, for the first time, induced supercurrent through a magnetically doped semiconductor, in this case a topological insulator. At higher fields, a rich and hysteretic magnetoresistance is revealed. Careful analysis shows that the explanation of this behaviour can be found in magnetic flux focusing stemming from the Meissner effect in the superconductor, without invoking any role of proximity induced superconductivity. The phenomena is important, as it will ubiquitously co-exist with any exotic new physics that may be present in this class of devices.

preprint2019arXiv

Josephson Effect and Charge Distribution in Thin Bi$_2$Te$_3$ Topological Insulators

Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, we study the Josephson effect, magnetotransport, and weak anti-localization in bottom-gated thin Bi$_2$Te$_3$ topological insulator films.We compare the experimental carrier densities to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and find excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.

preprint2016arXiv

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ thin films. Using a back-gate, the carrier density is tuned by a factor of $\sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of $\sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.

preprint2013arXiv

Signature of a topological phase transition in the Josephson supercurrent through a topological insulator

Topological insulators (TIs) hold great promise for realizing zero-energy Majorana states in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes in topological insulator Josephson junctions (TIJJs) have -- indeed -- been observed. To verify this claim, one needs to study the topological properties of low-energy Andreev-bound states (ABS) in TIs of which the Majorana modes are a special case. It has been shown theoretically that topologically non-trivial low-energy ABS are also present in TIJJs with doped topological insulators up to some critical level of doping at which the system undergoes a topological phase transition. Here, we present first experimental evidence for this topological transition in the bulk band of a doped TI. Our theoretical calculations, and numerical modeling link abrupt changes in the critical current of top-gated TIJJs to moving the chemical potential in the charge-accumulation region on the surface of the doped TI across a band-inversion point. We demonstrate that the critical-current changes originate from a shift of the spatial location of low-energy ABS from the surface to the boundary between topologically-trivial and band-inverted regions after the transition. The appearance of a decay channel for surface ABS is related to the vanishing of the band effective mass in the bulk and thus exemplifies the topological character of surface ABS as boundary modes. Importantly, the mechanism suggest a means of manipulating Majorana modes in future experiments.