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Prosper Ngabonziza

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con quant-ph

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preprint2022arXiv

Electronic Structure and Magnetism of the Triple-layered Ruthenate Sr$_{4}$Ru$_{3}$O$_{10}$

We report electronic band structure calculations for Sr$_{4}$Ru$_{3}$O$_{10}$ that displays both ferromagnetic and metamagnetic behavior. The density functional calculations find the ground state to be ferromagnetic in agreement with the experiment and we find that the inclusion of Coulomb Hubbard interaction U applied to the Ru 4d states has dramatic effects on the Fermi surface, which reveal the role of Coulomb interactions and correlated many-body physics. The minority spin bands are mainly empty with Fermi surfaces in the outer areas of the Brillouin zone away from the $Γ$ point with bands that disperse steeply upward. The majority spin bands are full or nearly fully occupied and form narrow bands near the Fermi energy around the $Γ$ point, which could be the electronic origin of the metamagnetism. The results are in qualitative agreement with recent angle resolved photoemission spectroscopy (ARPES) experiments and show the need for a combined theoretical study and experimental ARPES investigation with better energy resolution to reveal the nature of the narrow bands close to the Fermi-level, which is critical for understanding the exotic magnetic properties observed in this material.

preprint2022arXiv

Quantum Transport and Potential of Topological States for Thermoelectricity in Bi$_2$Te$_3$ Thin Films

This paper reviews recent developments in quantum transport and it presents recent efforts to explore the contribution of topological insulator boundary states to thermoelectricity in Bi$_2$Te$_3$ thin films. Although Bi$_2$Te$_3$ has been used as a thermoelectric material for many years, it is only recently that thin films of this material have been synthesized as 3D topological insulators with interesting physics and potential applications related to topologically protected surface states. A major bottleneck in Bi$_2$Te$_3$ thin films has been eliminating its bulk conductivity while increasing its crystal quality. The ability to grow epitaxial films with high crystal quality and to fabricate sophisticated Bi$_2$Te$_3$-based devices is attractive for implementing a variety of topological quantum devices and exploring the potential of topological states to improve thermoelectric properties. Special emphasis is laid on preparing low-defect-density Bi$_2$Te$_3$ epitaxial films, gate-tuning of normal-state transport and Josephson supercurrent in topological insulator/superconductor hybrid devices. Prospective quantum transport experiments on Bi$_2$Te$_3$ thin-film devices are discussed as well. Finally, an overview of current progress on the contribution of topological insulator boundary states to thermoelectricity is presented. Future explorations to reveal the potential of topological states for improving thermoelectric properties of Bi$_2$Te$_3$ films and realizing high-performance thermoelectric devices are discussed.

preprint2020arXiv

Inelastic Electron Tunneling Spectroscopy at High-Temperatures

Ion conducting materials are critical components of batteries, fuel cells, and devices such as memristive switches. Analytical tools are therefore sought that allow the behavior of ions in solids to be monitored and analyzed with high spatial resolution and in real time. In principle, inelastic tunneling spectroscopy offers these capabilities. However, as its spectral resolution is limited by thermal softening of the Fermi-Dirac distribution, tunneling spectroscopy is usually constrained to cryogenic temperatures. This constraint would seem to render tunneling spectroscopy useless for studying ions in motion. We report here the first inelastic tunneling spectroscopy studies above room temperature. For these measurements, we have developed high-temperature-stable tunnel junctions that incorporate within the tunnel barrier ultrathin layers for efficient proton conduction. By analyzing the vibrational modes of O-H bonds in BaZrO3-based heterostructures, we demonstrate the detection of protons with a spectral resolution of 20 meV at 400 K (FWHM). Overturning the hitherto existing prediction for the spectral resolution limit of 186 meV (5.4 kBT at 400 K), this resolution enables high-temperature tunneling spectroscopy of ion conductors. With these advances, inelastic tunneling spectroscopy constitutes a novel, valuable analytical tool for solid-state ionics.

preprint2019arXiv

Josephson Effect and Charge Distribution in Thin Bi$_2$Te$_3$ Topological Insulators

Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, we study the Josephson effect, magnetotransport, and weak anti-localization in bottom-gated thin Bi$_2$Te$_3$ topological insulator films.We compare the experimental carrier densities to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and find excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.

preprint2016arXiv

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ thin films. Using a back-gate, the carrier density is tuned by a factor of $\sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of $\sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.