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Researcher profile

Alex K. Jones

Alex K. Jones contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging TechnologiesHardware Architecturecs.CYMachine Learning

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Published work

7 published item(s)

preprint2022arXiv

A Multi-domain Magneto Tunnel Junction for Racetrack Nanowire Strips

Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or anti-parallel domains in a portion of the DWM nanowire. In this paper we propose a multi-domain magneto-tunnel junction (MTJ) that can detect different resistance levels as a function of a the number of parallel or anti-parallel domains. Using detailed micromagnetic simulation with LLG, we demonstrate the multi-domain MTJ, study the benefit of its macro-size on resilience to process variation and present a macro-model for scaling the size of the multi-domain MTJ. Our results indicate scalability to seven-domains while maintaining a 16.3mV sense margin.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Brain-inspired Cognition in Next Generation Racetrack Memories

Hyperdimensional computing (HDC) is an emerging computational framework inspired by the brain that operates on vectors with thousands of dimensions to emulate cognition. Unlike conventional computational frameworks that operate on numbers, HDC, like the brain, uses high dimensional random vectors and is capable of one-shot learning. HDC is based on a well-defined set of arithmetic operations and is highly error-resilient. The core operations of HDC manipulate HD vectors in bulk bit-wise fashion, offering many opportunities to leverage parallelism. Unfortunately, on conventional Von-Neuman architectures, the continuous movement of HD vectors among the processor and the memory can make the cognition task prohibitively slow and energy-intensive. Hardware accelerators only marginally improve related metrics. On the contrary, only partial implementation of an HDC framework inside memory, using emerging memristive devices, has reported considerable performance/energy gains. This paper presents an architecture based on racetrack memory (RTM) to conduct and accelerate the entire HDC framework within the memory. The proposed solution requires minimal additional CMOS circuitry and uses a read operation across multiple domains in RTMs called transverse read (TR) to realize exclusive-or (XOR) and addition operations. To minimize the overhead the CMOS circuitry, we propose an RTM nanowires-based counting mechanism that leverages the TR operation and the standard RTM operations. Using language recognition as the use case demonstrates 7.8x and 5.3x reduction in the overall runtime and energy consumption compared to the FPGA design, respectively. Compared to the state-of-the-art in-memory implementation, the proposed HDC system reduces the energy consumption by 8.6x.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

FPIRM: Floating-point Processing in Racetrack Memories

Convolutional neural networks (CNN) have become a ubiquitous algorithm with growing applications in mobile and edge settings. We describe a compute-in-memory (CIM) technique called FPIRM using Racetrack Memory (RM) to accelerate CNNs for edge systems. Using transverse read, a technique that can determine the number of '1's multiple adjacent domains, FPIRM can efficiently implement multi-operand bulk-bitwise and addition computations, and two-operand multiplication. We discuss how FPIRM can implement both variable precision integer and floating point arithmetic. This allows both CNN inference and on-device training without expensive data movement to the cloud. Based on these functions we demonstrate implementation of several CNNs with back propagation using RM CIM and compare these to state-of-the-art implementations of CIM inference and training in Field-Programmable Gate Arrays. During training FPIRM improves by 2$\times$ the efficiency, by reducing the energy consumption by at least 27% and increasing the throughput by at least 18% against FPGA.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pinning Fault Mode Modeling for DWM Shifting

Extreme scaling for purposes of achieving higher density and lower energy continues to increase the probability of memory faults. For domain wall (DW) memories, misalignment faults arise when aligning domains with access points. A previously understudied type of shifting fault, a pinning fault may occur due to non-uniform pinning potential distribution caused by notches with fabrication imperfections. This non-uniformity can pin a wall during current-induced DW motion. This paper provides a model of geometric variations varying width, depth, and curvature variations of a notch, their impacts on the critical shift current, and a study of the resulting impact on fault rates of DW memory systems. An increase in the effective critical shift current due to 5% variation predicts a pinning fault rate on the order of $10^{-8}$ per shift, which results in a mean-time-to-failure of circa 2s for a DW memory system.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

PIRM: Processing In Racetrack Memories

The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write performance, energy savings and nonvolatility, potential for extremely high storage density, and does not have significant endurance limitations. However, DWM's benefits cannot address data access latency and throughput limitations of memory bus bandwidth. We propose PIRM, a DWM-based in-memory computing solution that leverages the properties of DWM nanowires and allows them to serve as polymorphic gates. While normally DWM is accessed by applying spin polarized currents orthogonal to the nanowire at access points to read individual bits, transverse access along the DWM nanowire allows the differentiation of the aggregate resistance of multiple bits in the nanowire, akin to a multilevel cell. PIRM leverages this transverse reading to directly provide bulk-bitwise logic of multiple adjacent operands in the nanowire, simultaneously. Based on this in-memory logic, PIRM provides a technique to conduct multi-operand addition and two operand multiplication using transverse access. PIRM provides a 1.6x speedup compared to the leading DRAM PIM technique for query applications that leverage bulk bitwise operations. Compared to the leading PIM technique for DWM, PIRM improves performance by 6.9x, 2.3x and energy by 5.5x, 3.4x for 8-bit addition and multiplication, respectively. For arithmetic heavy benchmarks, PIRM reduces access latency by 2.1x, while decreasing energy consumption by 25.2x for a reasonable 10% area overhead versus non-PIM DWM.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

XDWM: A 2D Domain Wall Memory

Domain-Wall Memory (DWM) structures typically bundle nanowires shifted together for parallel access. Ironically, this organization does not allow the natural shifting of DWM to realize \textit{logical shifting} within data elements. We describe a novel 2-D DWM cross-point (X-Cell) that allows two individual nanowires placed orthogonally to share the X-Cell. Each nanowire can operate independently while sharing the value at the X-Cell. Using X-Cells, we propose an orthogonal nanowire in the Y dimension overlaid on a bundle of X dimension nanowires for a cross-DWM or XDWM. We demonstrate that the bundle shifts correctly in the X-Direction, and that data can be logically shifted in the Y-direction providing novel data movement and supporting processing-in-memory. We conducted studies on the requirements for physical cell dimensions and shift currents for XDWM. Due to the non-standard domain, our micro-magnetic studies demonstrate that XDWM introduces a shift current penalty of 6.25% while shifting happens in one nanowire compared to a standard nanowire. We also demonstrate correct shifting using nanowire bundles in both the X- and Y- dimensions. Using magnetic simulation to derive the values for SPICE simulation we show the maximum leakage current between nanowires when shifting the bundle together is $\le3$% indicating that sneak paths are not problematic for XDWM.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Workshops on Extreme Scale Design Automation (ESDA) Challenges and Opportunities for 2025 and Beyond

Integrated circuits and electronic systems, as well as design technologies, are evolving at a great rate -- both quantitatively and qualitatively. Major developments include new interconnects and switching devices with atomic-scale uncertainty, the depth and scale of on-chip integration, electronic system-level integration, the increasing significance of software, as well as more effective means of design entry, compilation, algorithmic optimization, numerical simulation, pre- and post-silicon design validation, and chip test. Application targets and key markets are also shifting substantially from desktop CPUs to mobile platforms to an Internet-of-Things infrastructure. In light of these changes in electronic design contexts and given EDA's significant dependence on such context, the EDA community must adapt to these changes and focus on the opportunities for research and commercial success. The CCC workshop series on Extreme-Scale Design Automation, organized with the support of ACM SIGDA, studied challenges faced by the EDA community as well as new and exciting opportunities currently available. This document represents a summary of the findings from these meetings.

0 citations0 reviewsNo code linkedOpen access