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Prayash Dutta

Prayash Dutta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Emerging Technologies

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Published work

2 published item(s)

preprint2022arXiv

A Multi-domain Magneto Tunnel Junction for Racetrack Nanowire Strips

Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or anti-parallel domains in a portion of the DWM nanowire. In this paper we propose a multi-domain magneto-tunnel junction (MTJ) that can detect different resistance levels as a function of a the number of parallel or anti-parallel domains. Using detailed micromagnetic simulation with LLG, we demonstrate the multi-domain MTJ, study the benefit of its macro-size on resilience to process variation and present a macro-model for scaling the size of the multi-domain MTJ. Our results indicate scalability to seven-domains while maintaining a 16.3mV sense margin.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

PIRM: Processing In Racetrack Memories

The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write performance, energy savings and nonvolatility, potential for extremely high storage density, and does not have significant endurance limitations. However, DWM's benefits cannot address data access latency and throughput limitations of memory bus bandwidth. We propose PIRM, a DWM-based in-memory computing solution that leverages the properties of DWM nanowires and allows them to serve as polymorphic gates. While normally DWM is accessed by applying spin polarized currents orthogonal to the nanowire at access points to read individual bits, transverse access along the DWM nanowire allows the differentiation of the aggregate resistance of multiple bits in the nanowire, akin to a multilevel cell. PIRM leverages this transverse reading to directly provide bulk-bitwise logic of multiple adjacent operands in the nanowire, simultaneously. Based on this in-memory logic, PIRM provides a technique to conduct multi-operand addition and two operand multiplication using transverse access. PIRM provides a 1.6x speedup compared to the leading DRAM PIM technique for query applications that leverage bulk bitwise operations. Compared to the leading PIM technique for DWM, PIRM improves performance by 6.9x, 2.3x and energy by 5.5x, 3.4x for 8-bit addition and multiplication, respectively. For arithmetic heavy benchmarks, PIRM reduces access latency by 2.1x, while decreasing energy consumption by 25.2x for a reasonable 10% area overhead versus non-PIM DWM.

0 citations0 reviewsNo code linkedOpen access