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Sanjukta Bhanja

Sanjukta Bhanja appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Emerging Technologiescond-mat.mes-hallHardware Architecture

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Published work

6 published item(s)

preprint2022arXiv

A Multi-domain Magneto Tunnel Junction for Racetrack Nanowire Strips

Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or anti-parallel domains in a portion of the DWM nanowire. In this paper we propose a multi-domain magneto-tunnel junction (MTJ) that can detect different resistance levels as a function of a the number of parallel or anti-parallel domains. Using detailed micromagnetic simulation with LLG, we demonstrate the multi-domain MTJ, study the benefit of its macro-size on resilience to process variation and present a macro-model for scaling the size of the multi-domain MTJ. Our results indicate scalability to seven-domains while maintaining a 16.3mV sense margin.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pinning Fault Mode Modeling for DWM Shifting

Extreme scaling for purposes of achieving higher density and lower energy continues to increase the probability of memory faults. For domain wall (DW) memories, misalignment faults arise when aligning domains with access points. A previously understudied type of shifting fault, a pinning fault may occur due to non-uniform pinning potential distribution caused by notches with fabrication imperfections. This non-uniformity can pin a wall during current-induced DW motion. This paper provides a model of geometric variations varying width, depth, and curvature variations of a notch, their impacts on the critical shift current, and a study of the resulting impact on fault rates of DW memory systems. An increase in the effective critical shift current due to 5% variation predicts a pinning fault rate on the order of $10^{-8}$ per shift, which results in a mean-time-to-failure of circa 2s for a DW memory system.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

PIRM: Processing In Racetrack Memories

The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write performance, energy savings and nonvolatility, potential for extremely high storage density, and does not have significant endurance limitations. However, DWM's benefits cannot address data access latency and throughput limitations of memory bus bandwidth. We propose PIRM, a DWM-based in-memory computing solution that leverages the properties of DWM nanowires and allows them to serve as polymorphic gates. While normally DWM is accessed by applying spin polarized currents orthogonal to the nanowire at access points to read individual bits, transverse access along the DWM nanowire allows the differentiation of the aggregate resistance of multiple bits in the nanowire, akin to a multilevel cell. PIRM leverages this transverse reading to directly provide bulk-bitwise logic of multiple adjacent operands in the nanowire, simultaneously. Based on this in-memory logic, PIRM provides a technique to conduct multi-operand addition and two operand multiplication using transverse access. PIRM provides a 1.6x speedup compared to the leading DRAM PIM technique for query applications that leverage bulk bitwise operations. Compared to the leading PIM technique for DWM, PIRM improves performance by 6.9x, 2.3x and energy by 5.5x, 3.4x for 8-bit addition and multiplication, respectively. For arithmetic heavy benchmarks, PIRM reduces access latency by 2.1x, while decreasing energy consumption by 25.2x for a reasonable 10% area overhead versus non-PIM DWM.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

XDWM: A 2D Domain Wall Memory

Domain-Wall Memory (DWM) structures typically bundle nanowires shifted together for parallel access. Ironically, this organization does not allow the natural shifting of DWM to realize \textit{logical shifting} within data elements. We describe a novel 2-D DWM cross-point (X-Cell) that allows two individual nanowires placed orthogonally to share the X-Cell. Each nanowire can operate independently while sharing the value at the X-Cell. Using X-Cells, we propose an orthogonal nanowire in the Y dimension overlaid on a bundle of X dimension nanowires for a cross-DWM or XDWM. We demonstrate that the bundle shifts correctly in the X-Direction, and that data can be logically shifted in the Y-direction providing novel data movement and supporting processing-in-memory. We conducted studies on the requirements for physical cell dimensions and shift currents for XDWM. Due to the non-standard domain, our micro-magnetic studies demonstrate that XDWM introduces a shift current penalty of 6.25% while shifting happens in one nanowire compared to a standard nanowire. We also demonstrate correct shifting using nanowire bundles in both the X- and Y- dimensions. Using magnetic simulation to derive the values for SPICE simulation we show the maximum leakage current between nanowires when shifting the bundle together is $\le3$% indicating that sneak paths are not problematic for XDWM.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Hybrid CMOS-MQCA Logic Architectures using Multi-Layer Spintronic Devices

We present a novel hybrid CMOS-MQCA architecture using multi-layer Spintronic devices as computing elements. A feasibility study is presented with 22nm CMOS where new approaches for spin transfer torque induced clocking and read-out scheme for variability-tolerance are introduced. A first-of-its-kind Spintronic device model enables circuit simulation using existing CAD infrastructure. Approximately 70% reduction in energy consumption is observed when compared against conventional field-induced clocking scheme.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Defect Analysis of MCA Wires

As devices continue to scale, imperfections in the fabrication process will have a more substantial impact on the reliability of a system. In Magnetic Cellular Automata (MCA) data is transferred through the coupling of neighboring cells via magnetic force fields. Due to the size of the switching cells, usually of the order of nanometers or smaller, MCA can be sensitive to inherent fabrication defects such as irregular spacing and non-uniform cell structures. Here we investigate conventional electron beam lithography fabrication defects and present a simulation based study on their effects on information propagation in a wire. The study varies the location of the different types of defects throughout the MCA wire under the in influence of a spatial moving clocking field. We demonstrate that with the proposed spatially moving clock the most probable fabrication defects of MCA do not affect the information propagation and the location of the defect does not play a significant role in computation. Thus it is concluded that MCA wires demonstrate significant defect robustness towards realistic electron beam lithography shortcomings.

0 citations0 reviewsNo code linkedOpen access