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Alessandro La Rosa

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physics.ins-det hep-ex

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preprint2020arXiv

The CMS Outer Tracker for the High Luminosity LHC upgrade

The High Luminosity Large Hadron Collider (HL-LHC) at CERN is expected to collide protons at a centre-of-mass energy of 14\,TeV and to reach the unprecedented peak instantaneous luminosity of 5\,$-$\,7.5\,x\,$10^{34}$\,cm$^{-2}$s$^{-1}$ with an average number of pileup events of 140\,$-$\,200. This will allow the ATLAS and CMS experiments to collect integrated luminosities up to 3000\,$-$\,4000\,fb$^{-1}$ during the project lifetime. To cope with this extreme scenario the CMS detector will be substantially upgraded before starting the HL-LHC, with a plan known as CMS Phase-2 upgrade. The CMS Tracker detector will have to be replaced in order to fully exploit the delivered luminosity and cope with the demanding operating conditions. The new detector will provide robust tracking as well as input for the first level trigger. This paper is focused on the replacement of the CMS Outer Tracker system, describing the new layout and the technological choices together with some highlights of module assembly and quality assurance aspects.

preprint2016arXiv

Characterization of Novel Thin N-in-P Planar Pixel Modules for the ATLAS Inner Tracker Upgrade

The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) to start operation in 2026. The most severe challenges are to be faced by the innermost layers of the pixel detector which will have to withstand a radiation fluence of up to $1.4\times10^{16}\,$n$_\text{eq}$/cm$^{2}$. Thin planar pixel modules are promising candidates to instrument these layers, thanks to the small material budget and their high charge collection efficiency after irradiation. Sensors of $100-200\,μ$m thickness, interconnected to FE-I4 read-out chips, are characterized with radioactive sources as well as testbeams at the CERN-SPS and DESY. The performance of sensors irradiated up to a fluence of $5\times 10^{15}\,$n$_\text{eq}$/cm$^{2}$ is compared in terms of charge collection and hit efficiency. Highly segmented sensors are a challenge for the tracking in the forward region of the pixel system at the HL-LHC. To reproduce the performance of $50$x$50\,μ$m$^2$ pixels at high pseudo-rapidities, FE-I4 compatible planar pixel sensors are studied before and after irradiation in beam tests at high incidence angle ($80^\circ$) with respect to the short pixel direction. Results on cluster shape and hit efficiency will be shown.

preprint2016arXiv

Irradiation induced effects in the FE-I4 front-end chip of the ATLAS IBL detector

The ATLAS Insertable B-Layer (IBL) detector was installed into the ATLAS experiment in 2014 and has been in operation since 2015. During the first year of IBL data taking an increase of the low voltage currents associated with the FE-I4 front-end chip was observed and this increase was traced back to the radiation damage in the chip. The dependence of the current on the total-ionising dose and temperature has been tested with X-ray and proton irradiations and will be presented in this paper together with the detector operation guidelines.

preprint2015arXiv

ATLAS Pixel Detector: Operational Experience and Run-1 to Run-2 Transition

The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of a new innermost layer, the Insertable B-Layer (IBL). An overview of the operational experience, the refurbishing of the Pixel Detector and of the IBL project as well as the experience in its construction, integration and commissioning are described.

preprint2013arXiv

Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.

preprint2011arXiv

Characterization and Performance of Silicon n-in-p Pixel Detectors for the ATLAS Upgrades

The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. N-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 μm thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current the ATLAS read-out chip FE-I3. The characterisation has been performed with the ATLAS pixel read-out systems, before and after irradiation with 24 GeV/c protons. In addition preliminary testbeam results for the tracking efficiency and charge collection, obtained with a SCM, are discussed.