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Anna Macchiolo

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physics.ins-det hep-ex astro-ph.IM

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preprint2022arXiv

Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation

The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads are separated by physical trenches etched in the silicon. This technology can reduce the interpixel dead area, mitigating the fill factor problem. The TI-RD50 production studied in this work is the first one of pixelated TI-LGADs. The characterization was performed using a scanning TCT setup with an infrared laser and a $^{90}$Sr source setup.

preprint2020arXiv

Dark Matter in CCDs at Modane (DAMIC-M): a silicon detector apparatus searching for low-energy physics processes

Dark Matter In CCDs (DAMIC) is a silicon detector apparatus used primarily for searching for low-mass dark matter using the silicon bulk of Charge-Coupled Devices (CCDs) as targets. The silicon target within each CCD is \SI{675}{\micro\meter} thick and its top surface is divided into over 16 million \SI{15}{\micro\meter} $\times$ \SI{15}{\micro\meter} pixels. The DAMIC collaboration has installed a number of these CCDs at SNOLAB. As of 2019, DAMIC at SNOLAB has reached operational conditions with leakage current less than \SI{8.2e-22}{\ampere\per\centi\meter\squared} and a readout noise of \SI{1.6}{\electron}, achieved with 5 CCDs. A new DAMIC apparatus will be installed at Laboratoire Souterrain de Modane in a few years. The DAMIC at Modane (DAMIC-M) collaboration will be using an improved version of CCDs designed by Lawrence Berkeley National Laboratory with skipper amplifiers that use non-destructive readout with multiple-sampling, enabling the CCDs to achieve a readout noise of \SI{0.068}{\electron}. The low readout noise, in conjunction with low leakage current of these skipper CCDs, will allow DAMIC-M to observe physics processes with collisions energies as low as \SI{1}{\electronvolt}. The DAMIC-M experiment will consist of an array of 50 large-area skipper CCDs with more than 36 million pixels in each CCD. The following proceeding will introduce the DAMIC apparatus at SNOLAB and its results and as well as the capabilities and the status of the new DAMIC-M experiment.

preprint2016arXiv

Characterization of Novel Thin N-in-P Planar Pixel Modules for the ATLAS Inner Tracker Upgrade

The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) to start operation in 2026. The most severe challenges are to be faced by the innermost layers of the pixel detector which will have to withstand a radiation fluence of up to $1.4\times10^{16}\,$n$_\text{eq}$/cm$^{2}$. Thin planar pixel modules are promising candidates to instrument these layers, thanks to the small material budget and their high charge collection efficiency after irradiation. Sensors of $100-200\,μ$m thickness, interconnected to FE-I4 read-out chips, are characterized with radioactive sources as well as testbeams at the CERN-SPS and DESY. The performance of sensors irradiated up to a fluence of $5\times 10^{15}\,$n$_\text{eq}$/cm$^{2}$ is compared in terms of charge collection and hit efficiency. Highly segmented sensors are a challenge for the tracking in the forward region of the pixel system at the HL-LHC. To reproduce the performance of $50$x$50\,μ$m$^2$ pixels at high pseudo-rapidities, FE-I4 compatible planar pixel sensors are studied before and after irradiation in beam tests at high incidence angle ($80^\circ$) with respect to the short pixel direction. Results on cluster shape and hit efficiency will be shown.

preprint2016arXiv

Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 $μ$m thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of $14\times10^{15}$ n$_{eq}$/cm$^2$. The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50x50 and 25x100 $μ$m$^2$) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50x50 $μ$m$^2$ pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80$^\circ$) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

preprint2011arXiv

Characterization and Performance of Silicon n-in-p Pixel Detectors for the ATLAS Upgrades

The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. N-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 μm thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current the ATLAS read-out chip FE-I3. The characterisation has been performed with the ATLAS pixel read-out systems, before and after irradiation with 24 GeV/c protons. In addition preliminary testbeam results for the tracking efficiency and charge collection, obtained with a SCM, are discussed.