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Researcher profile

Aiden A. Martin

Aiden A. Martin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.opticsphysics.ins-det

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Published work

5 published item(s)

preprint2015arXiv

Direct-write milling of diamond by a focused oxygen ion beam

Recent advances in focused ion beam technology have enabled high-resolution, direct-write nanofabrication using light ions. Studies with light ions to date have, however, focused on milling of materials where sub-surface ion beam damage does not inhibit device performance. Here we report on direct-write milling of single crystal diamond using a focused beam of oxygen ions. Material quality is assessed by Raman and luminescence analysis, and reveals that the damage layer generated by oxygen ions can be removed by nonintrusive post-processing methods such as localised electron beam induced chemical etching.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Emergent formation of dynamic topographic patterns in electron beam induced etching

Spontaneous formation of geometric patterns is a fascinating, ubiquitous process that provides fundamental insights into the roles of symmetry breaking, anisotropy and nonlinear interactions in emergent phenomena. Here we report dynamic, highly ordered topographic patterns on the surface of diamond that span multiple length scales and have a symmetry controlled by the chemical species of a precursor gas used in electron beam induced etching (EBIE). This behavior reveals an underlying etch rate anisotropy and an electron energy transfer pathway that has been overlooked by existing EBIE theory. We present an etch rate kinetics model that fully explains our results and is universally applicable to EBIE. Our findings can be exploited for controlled wetting, optical structuring and other emerging applications that require nano and micro-scale surface texturing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

We present a beam-directed chemical technique for controlling the charge states of near-surface luminescence centers in semiconductors. Specifically, we fluorinate the surface of H-terminated diamond by electron beam irradiation in the presence of NF3 vapor. The fluorination treatment acts as a local chemical switch that alters the charge state of nitrogen-vacancy luminescence centers from the neutral to the negative state. The electron beam fluorination process is highly localized and can be used to control the emission spectrum of individual nanodiamonds and surface regions scanned by the electron beam

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Study of narrowband single photon emitters in polycrystalline diamond films

Quantum information processing and integrated nanophotonics require robust generation of single photon emitters on demand. In this work we demonstrate that diamond films grown by microwave plasma chemical vapour deposition on a silicon substrate host bright, narrowband single photon emitters in the visible to near infrared spectral range. The emitters possess fast lifetime, absolute photostability, and exhibit full polarization at excitation and emission. Pulsed and continuous laser excitations confirm their quantum behaviour at room temperature, while low temperature spectroscopy is done to investigate their inhomogeneous broadening. Our results advance the knowledge of solid state single photon sources and open pathways for their practical implementation in quantum communication and quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Subtractive 3D Printing of Optically Active Diamond Structures

Diamond has recently attracted considerable attention as a promising platform for quantum technologies, photonics and high resolution sensing applications. Here we demonstrate a chemical approach that enables the fabrication of functional diamond structures using gas-mediated electron induced etching. The method achieves chemical etching at room temperature through the dissociation of surface-adsorbed H2O molecules by electron irradiation in a water vapor environment. High throughput, parallel processing is possible by electron flood exposure and the use of an etch mask, while single step, mask-free three dimensional fabrication and iterative editing are achieved using a variable pressure scanning electron microscope. The electron induced chemical etching paves the way to a transformative technology for nanofabrication of diamond and other wide band-gap semiconductors.

0 citations0 reviewsNo code linkedOpen access