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A. Siddiki

A. Siddiki contributes to research discovery and scholarly infrastructure.

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Published work

17 published item(s)

preprint2022arXiv

The topological inequivalence of Hall bar versus Corbino geometries in real space

This work discusses the effect of topology in the frame of direct Coulomb interactions, considering two distinct geometries, namely the Hall bar and the Corbino disc. In the mainstream approaches to the quantized Hall effect, the consequences of interactions are usually underestimated. Here, we investigate the electron number density, potential and current distributions within the screening theory that considers electron-electron interactions. Inclusion of direct Coulomb interaction and realistic boundary conditions result in local metal-like compressible and (Topological) insulator-like incompressible regions. Consequently, we show that the bulk of both geometries in coordinate space is not incompressible throughout the quantized Hall plateau. Furthermore, placing two inner contacts within the Hall bar geometry shows that the quantization is unaffected by changing the genus number in real space. Finally, we propose novel experiments which will enable us to distinguish the topological properties of the two geometries in the configuration space.

preprint2013arXiv

The local nature of incompressibility at quantised Hall effect modified by interactions

Since the experimental realisation of the integer quantised Hall effect in a two dimensional electron system subject to strong perpendicular magnetic fields in 1980, a central question has been the interrelation between the conductance quantisation and the topological properties of the system. It is conjectured that if the electron system is described by a Bloch hamiltonian, then the system is insulating in the bulk of the sample throughout the quantised Hall plateau due to magnetic field induced energy gap. Meanwhile, the system is conducting at the edges resembling a 2+1 dimensional topological insulator without the time-reversal symmetry. However, the validity of this conjecture remains unclear for finite size, non-periodically bounded real Hall bar devices. Here we show experimentally that the close relationship proposed between the quantised Hall effect and the topological bulk insulator is prone to break for specific magnetic field intervals within the plateau evidenced by our magneto-transport measurements performed on GaAs/AlGaAs high purity Hall bars with two inner contacts embedded to bulk. Our data presents a similar behaviour also for fractional states, in particular for 2/3, 3/5 and 4/3.

preprint2012arXiv

Screening theory based modeling of the quantum Hall based quasi-particle interferometers defined at quantum-dots

In this work, we investigate the spatial distributions and the widths of the incompressible strips, i.e. the edgestates. The incompressible strips that correspond to ν=1,2 and 1/3 filling factors are examined in the presence of a strong perpendicular magnetic field. We present a microscopic picture of the fractional quantum Hall effect based interferometers, within a phenomenological model. We adopt Laughlin quasi-particle properties in our calculation scheme. In the fractional regime, the partially occupied lowest Landau level is assumed to form an energy gap due to strong correlations. Essentially by including this energy gap to our energy spectrum, we obtain the properties of the incompressible strips at ν=1/3. The interference conditions are investigated as a function of the gate voltage and steepness of the confinement potential, together with the strength of the applied magnetic field.

preprint2012arXiv

Theoretical Investigation of Local Electron Temperature in Quantum Hall Systems

In this work we solve thermo-hydrodynamical equations considering a two dimensional electron system in the integer quantum Hall regime, to calculate the spatial distribution of the local electron temperature. We start from the self-consistently calculated electrostatic and electrochemical potentials in equilibrium. Next, by imposing an external current, we investigate the variations of the electron temperature in the linear-response regime. Here a local relation between the electron density and conductivity tensor elements is assumed. Following the Ohm's law we obtain local current densities and by implementing the results of the thermo-hydrodynamical theory, calculate the local electron temperature. We observe that the local electron temperature strongly depends on the formation of compressible and incompressible strips.

preprint2012arXiv

Time-dependent transport in Aharonov-Bohm interferometers

A numerical approach is employed to explain transport characteristics in realistic, quantum Hall based Aharonov-Bohm interferometers. First, the spatial distribution of incompressible strips, and thus the current channels, are obtained applying a self-consistent Thomas-Fermi method to a realistic heterostructure under quantized Hall conditions. Second, the time-dependent Schrödinger equation is solved for electrons injected in the current channels. Distinctive Aharonov-Bohm oscillations are found as a function of the magnetic flux. The oscillation amplitude strongly depends on the mutual distance between the transport channels and on their width. At an optimal distance the amplitude and thus the interchannel transport is maximized, which determines the maximum visibility condition. On the other hand, the transport is fully suppressed at magnetic fields corresponding to half-integer flux quanta. The results confirm the applicability of realistic Aharonov-Bohm interferometers as controllable current switches.

preprint2011arXiv

Local density of states of two-dimensional electron systems under strong in-plane electric and perpendicular magnetic fields

We calculate the local density of states of a two-dimensional electron system under strong crossed magnetic and electric fields. We assume a strong perpendicular magnetic field which, in the absence of in-plane electric fields and collision broadening effects, leads to Landau quantization and the well-known singular Landau density of states. Unidirectional in-plane electric fields lead to a broadening of the delta-function-singularities of the Landau density of states. This results in position-dependent peaks of finite height and width, which can be expressed in terms of the energy eigenfunctions. These peaks become wider with increasing strength of the electric field and may eventually overlap, which indicates the onset of inter-Landau-level scattering, if electron-impurity scattering is considered. We present analytical results for two simple models and discuss their possible relevance for the breakdown of the integer quantized Hall effect. In addition, we consider a more realistic model for an incompressible stripe separating two compressible regions, in which nearly perfect screening pins adjacent Landau levels to the electrochemical potential. We also discuss the effect of an imposed current on the local density of states in the stripe region.

preprint2010arXiv

An analytical model of fractional overshooting

We predict resistance anomalies to be observed at high mobility two dimensional electron systems (2DESs) in the fractional quantized Hall regime, where the narrow (L <10 ?m) Hall bar is defined by top gates. An analytic calculation scheme is used to describe the formation of integral and fractional incompressible strips. We incorporate the screening properties of the 2DES, together with the effects of perpendicular magnetic field, to calculate the effective widths of the current carrying channels. The many-body effects are included to our calculation scheme through the energy gap obtained from the well accepted formulation of the composite fermions. We show that, the fractional incompressible strips at the edges, assuming different filling factors, become evanescent and co-exist at certain magnetic field intervals yielding an overshoot at the Hall resistance. Similar to that of the integral quantized Hall effect. We also provide a mechanism to explain the absence of 1/3 state at the Fabry-Perot interference experiments. Yet, an un-investigated sample design is proposed to observe and enhance the fragile effects like interference and overshooting based on our analytical model.

preprint2010arXiv

Edge-to-bulk transition of the IQHE at cleaved edge overgrown samples: a screening theory based experimental proposal

In this work, we exploit the findings of the screening theory of the integer quantized Hall effect (QHE) based on the formation of the incompressible strips and its essential influence on the global resistances and propose certain experimental conditions to observe the bulk to edge transition of the QHE in a phenomenological model. We propose a Hall bar design on a cleaved edge overgrown wafer, which allows us to manipulate the edge potential profile from smooth to extremely sharp. For a particular sample design and by the help of a side gate perpendicular to the two dimensional electron system (2DES), it is shown that the plateau widths can be changed and even made to vanish when changing the edge potential profile. Such a control of the edge potential implies peculiar transport results when considering the screening theory, which includes direct Coulomb interaction explicitly. We think that, these experiments will shed new light on the understanding of the QHE.

preprint2010arXiv

Energy Calculations of The Realistic Quantum Slab

We calculated the total energy of a semiconductor quantum dot which is defined by the trench gate method. In our calculation we used a recently developed energy functional called ``orbital-free energy functional&#34;. We compared the total energies obtained by Thomas-Fermi approximation, orbital-free energy functional and standard local-density approximation for the square quantum slab geometry. We have seen that this newly developed energy functional is numerically very efficient, superior to the Thomas-Fermi approximation and is in good agreement with the local-density approximation for two different sizes of quantum dot systems.

preprint2010arXiv

Inferring the transport properties of edge-states formed at quantum Hall based Aharonov-Bohm interferometers theoretically

Here, we report on our results where self-consistent calculations are performed to investigate the interference conditions, numerically. We employ the successful 4$^{th}$ order grid technique to obtain the actual electrostatic quantities of the samples used at the quantum Hall based Aharonov-Bohm interferometers. By knowing the electron density distribution we calculate the spatial distribution of the edge-states, which are considered as mono-energetic current channels. Our results are in accord with the experimental findings concerning the electron density distribution. Finally, we also comment on the &#34;optimized&#34; sample design in which highest visibility oscillations can be measured.

preprint2010arXiv

The effect of disorder within the interaction theory of integer quantized Hall effect

We study effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. Short range part of the single impurity potential is used to define the conductivity tensor elements within the self-consistent Born approximation, whereas the long range part is treated self-consistently at the Hartree level. Using the simple, however, fundamental Thomas-Fermi screening, we find that the long range disorder potential is well screened. While, the short range part is approximately unaffected by screening and is suitable to define the mobility at vanishing magnetic fields. In light of these range dependencies we discuss the extend of the quantized Hall plateaus considering the &#34;mobility&#34; of the wafer and the width of the sample, by re-formulating the Ohm&#39;s law at low temperatures and high magnetic fields. We find that, the plateau widths mainly depend on the long range fluctuations of the disorder, whereas the importance of density of states broadening is less pronounced and even is predominantly suppressed. These results are in strong contrast with the conventional single particle pictures. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the level broadening is negligible.

preprint2009arXiv

Asymmetric non-linear response of the IQHE

An asymmetric break-down of the integer quantized Hall effect is investigated. This rectification effect is observed as a function of the current value and its direction in conjunction with an asymmetric lateral confinement potential defining the Hall-bar. Our electrostatic definition of the Hall-bar via Schottky-gates allows a systematic control of the steepness of the confinement potential at the edges of the Hall-bar. A softer edge (flatter confinement potential) results in more stable Hall-plateaus, i.e. a break-down at a larger current density. For one soft and one hard edge the break-down current depends on the current direction, resembling rectification. This non-linear magneto-transport effect confirms the predictions of an emerging screening theory of the IQHE.

preprint2009arXiv

Exchange-correlation enhancement of the Lande-g* factor in integer quantized Hall plateaus

We study the emergent role of many-body effects on a two dimensional electron gas (2DEG) within the Thomas-Fermi-Poisson approximation, including both the exchange and correlation interactions in the presence of a strong perpendicular magnetic field. It is shown that, the indirect interactions widen the odd-integer incompressible strips spatially, whereas the even-integer filling factors almost remain unaffected.

preprint2009arXiv

Interaction mediated asymmetries of the quantized Hall effect

Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high mobility samples the intersection point, at even filling factors ν= 2; 4 ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i. e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at ν= 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.

preprint2009arXiv

Microscopic theory of the activated behavior of the quantized Hall effect

The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model. We investigate the variation of the activation energy depending on the width of samples in the range of $2d\sim [1-10] μm$. We show that the largest activation energy of high-mobility narrow samples, is at the low field edge of Hall filling factor 2 plateau (exceeding half of the cyclotron energy), whereas for relatively wide samples the higher activation energy is obtained at the high field edge of Hall plateau. In contrast to the single-particle theories based on the localization of electronic states, we found that the activation energy is almost independent of the properties of the density of states.

preprint2009arXiv

Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous current-density distribution gives rise to additional features in the magneto-transport, such as resistance asymmetry and modified longitudinal resistances. We experimentally demonstrate that the asymmetry relations satisfied in the integer filling factor regime are valid also in the transition regime to non-integer filling factors, thereby suggesting a more general form of these asymmetry relations. A model is developed based on the screening theory of the integer quantum Hall effect that allows the self-consistent calculation of the local electron density and thereby the local current density including the current along incompressible stripes. The model, which also includes the so-called `static skin effect&#39; to account for the current density distribution in the compressible regions, is capable of explaining the main experimental observations. Due to the existence of an incompressible-compressible transition in the bulk, the system behaves always metal-like in contrast to the conventional Landauer-Buettiker description, in which the bulk remains completely insulating throughout the quantized Hall plateau regime.

preprint2008arXiv

Current direction induced rectification effect on (integer) quantized Hall plateaus

Current polarization induced rectification of the quantized Hall plateaus (QHPs) is studied within a Hartree type mean field approximation for asymmetrically depleted samples. We first investigate the existence of the current carrying incompressible strips (ISs), by solving the self-consistent equations, and their influence on magneto-transport (MT) properties. Next, the widths of the ISs are examined in terms of the steepness of the confining potential profile considering gate defined Hall bars. The corresponding MT coefficients are calculated using a local Ohm&#39;s law for a large fixed current and are compared for symmetric and asymmetric depleted samples. We predict that, the extend of the QHPs strongly depend on the current polarization, in the out of linear response regime, when considering asymmetrically depleted samples. Our results, concerning the extend of the QHPs depending on the current polarization are in contrast to the ones of the conventional theories of the integer quantized Hall effect (IQHE). We propose certain experimental conditions to test our theoretical predictions at high mobility, narrow samples.