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Researcher profile

G. Oylumluoglu

G. Oylumluoglu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

3 published item(s)

preprint2010arXiv

Edge-to-bulk transition of the IQHE at cleaved edge overgrown samples: a screening theory based experimental proposal

In this work, we exploit the findings of the screening theory of the integer quantized Hall effect (QHE) based on the formation of the incompressible strips and its essential influence on the global resistances and propose certain experimental conditions to observe the bulk to edge transition of the QHE in a phenomenological model. We propose a Hall bar design on a cleaved edge overgrown wafer, which allows us to manipulate the edge potential profile from smooth to extremely sharp. For a particular sample design and by the help of a side gate perpendicular to the two dimensional electron system (2DES), it is shown that the plateau widths can be changed and even made to vanish when changing the edge potential profile. Such a control of the edge potential implies peculiar transport results when considering the screening theory, which includes direct Coulomb interaction explicitly. We think that, these experiments will shed new light on the understanding of the QHE.

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preprint2010arXiv

The effect of disorder within the interaction theory of integer quantized Hall effect

We study effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. Short range part of the single impurity potential is used to define the conductivity tensor elements within the self-consistent Born approximation, whereas the long range part is treated self-consistently at the Hartree level. Using the simple, however, fundamental Thomas-Fermi screening, we find that the long range disorder potential is well screened. While, the short range part is approximately unaffected by screening and is suitable to define the mobility at vanishing magnetic fields. In light of these range dependencies we discuss the extend of the quantized Hall plateaus considering the "mobility" of the wafer and the width of the sample, by re-formulating the Ohm's law at low temperatures and high magnetic fields. We find that, the plateau widths mainly depend on the long range fluctuations of the disorder, whereas the importance of density of states broadening is less pronounced and even is predominantly suppressed. These results are in strong contrast with the conventional single particle pictures. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the level broadening is negligible.

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preprint2009arXiv

Microscopic theory of the activated behavior of the quantized Hall effect

The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model. We investigate the variation of the activation energy depending on the width of samples in the range of $2d\sim [1-10] μm$. We show that the largest activation energy of high-mobility narrow samples, is at the low field edge of Hall filling factor 2 plateau (exceeding half of the cyclotron energy), whereas for relatively wide samples the higher activation energy is obtained at the high field edge of Hall plateau. In contrast to the single-particle theories based on the localization of electronic states, we found that the activation energy is almost independent of the properties of the density of states.

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