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G. Oylumluoglu

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cond-mat.mes-hall

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preprint2014arXiv

Temperature Dependent Symmetry to Asymmetry Transition in Wide Quantum Wells

Quasi-two dimensional electron systems exhibit peculiar transport effects depending on their density profiles and temperature. A usual two dimensional electron system is assumed to have a $δ$ like density distribution along the crystal growth direction. However, once the confining quantum well is sufficiently large, this situation is changed and the density can no longer be assumed as a $δ$ function. In addition, it is known that the density profile is not a single peaked function, instead can present more than one maxima, depending on the well width. In this work, the electron density distributions in the growth direction considering a variety of wide quantum wells are investigated as function of temperature. We show that, the double peak in the density profile varies from symmetric (similar peak height) to asymmetric while changing the temperature for particular growth parameters. The alternation from symmetric to asymmetric density profiles is known to exhibit intriguing phase transitions and is decisive in defining the properties of the ground state wavefunction in the presence of an external magnetic field, i.e from insulating phases to even denominator fractional quantum Hall states. Here, by solving the temperature and material dependent Schrödinger and Poisson equations self-consistently, we found that such a phase transition may elaborated by taking into account direct Coulomb interactions together with temperature.

preprint2011arXiv

The visibility of IQHE at sharp edges: Experimental proposals based on interactions and edge electrostatics

The influence of the incompressible strips on the integer quantized Hall effect (IQHE) is investigated, considering a cleaved-edge overgrown (CEO) sample as an experimentally realizable sharp edge system. We propose a set of experiments to clarify the distinction between the large-sample limit when bulk disorder defines the IQHE plateau width and the small-sample limit smaller than the disorder correlation length, when self-consistent edge electrostatics define the IQHE plateau width. The large-sample or bulk QH regime is described by the usual localization picture, whereas the small-sample or edge regime is discussed within the compressible/incompressible strips picture, known as the screening theory of QH edges. Utilizing the unusually sharp edge profiles of the CEO samples, a Hall bar design is proposed to manipulate the edge potential profile from smooth to extremely sharp. By making use of a side-gate perpendicular to the two dimensional electron system, it is shown that the plateau widths can be changed or even eliminated altogether. Hence, the visibility of IQHE is strongly influenced when adjusting the edge potential profile and/or changing the dc current direction under high currents in the non-linear transport regime. As a second investigation, we consider two different types of ohmic contacts, namely highly transmitting (ideal) and highly reflecting (non-ideal) contacts. We show that if the injection contacts are non-ideal, however still ohmic, it is possible to measure directly the non-quantized transport taking place at the bulk of the CEO samples. The results of the experiments we propose will clarify the influence of the edge potential profile and the quality of the contacts, under quantized Hall conditions.

preprint2010arXiv

Edge-to-bulk transition of the IQHE at cleaved edge overgrown samples: a screening theory based experimental proposal

In this work, we exploit the findings of the screening theory of the integer quantized Hall effect (QHE) based on the formation of the incompressible strips and its essential influence on the global resistances and propose certain experimental conditions to observe the bulk to edge transition of the QHE in a phenomenological model. We propose a Hall bar design on a cleaved edge overgrown wafer, which allows us to manipulate the edge potential profile from smooth to extremely sharp. For a particular sample design and by the help of a side gate perpendicular to the two dimensional electron system (2DES), it is shown that the plateau widths can be changed and even made to vanish when changing the edge potential profile. Such a control of the edge potential implies peculiar transport results when considering the screening theory, which includes direct Coulomb interaction explicitly. We think that, these experiments will shed new light on the understanding of the QHE.

preprint2010arXiv

The effect of disorder within the interaction theory of integer quantized Hall effect

We study effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. Short range part of the single impurity potential is used to define the conductivity tensor elements within the self-consistent Born approximation, whereas the long range part is treated self-consistently at the Hartree level. Using the simple, however, fundamental Thomas-Fermi screening, we find that the long range disorder potential is well screened. While, the short range part is approximately unaffected by screening and is suitable to define the mobility at vanishing magnetic fields. In light of these range dependencies we discuss the extend of the quantized Hall plateaus considering the "mobility" of the wafer and the width of the sample, by re-formulating the Ohm's law at low temperatures and high magnetic fields. We find that, the plateau widths mainly depend on the long range fluctuations of the disorder, whereas the importance of density of states broadening is less pronounced and even is predominantly suppressed. These results are in strong contrast with the conventional single particle pictures. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the level broadening is negligible.

preprint2009arXiv

Microscopic theory of the activated behavior of the quantized Hall effect

The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model. We investigate the variation of the activation energy depending on the width of samples in the range of $2d\sim [1-10] μm$. We show that the largest activation energy of high-mobility narrow samples, is at the low field edge of Hall filling factor 2 plateau (exceeding half of the cyclotron energy), whereas for relatively wide samples the higher activation energy is obtained at the high field edge of Hall plateau. In contrast to the single-particle theories based on the localization of electronic states, we found that the activation energy is almost independent of the properties of the density of states.