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Researcher profile

I. Sokmen

I. Sokmen contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

5 published item(s)

preprint2011arXiv

Local density of states of two-dimensional electron systems under strong in-plane electric and perpendicular magnetic fields

We calculate the local density of states of a two-dimensional electron system under strong crossed magnetic and electric fields. We assume a strong perpendicular magnetic field which, in the absence of in-plane electric fields and collision broadening effects, leads to Landau quantization and the well-known singular Landau density of states. Unidirectional in-plane electric fields lead to a broadening of the delta-function-singularities of the Landau density of states. This results in position-dependent peaks of finite height and width, which can be expressed in terms of the energy eigenfunctions. These peaks become wider with increasing strength of the electric field and may eventually overlap, which indicates the onset of inter-Landau-level scattering, if electron-impurity scattering is considered. We present analytical results for two simple models and discuss their possible relevance for the breakdown of the integer quantized Hall effect. In addition, we consider a more realistic model for an incompressible stripe separating two compressible regions, in which nearly perfect screening pins adjacent Landau levels to the electrochemical potential. We also discuss the effect of an imposed current on the local density of states in the stripe region.

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preprint2010arXiv

Evanescent incompressible strips as origin of the observed Hall resistance overshoot

In this work we provide a systematic explanation to the unusual non-monotonic behavior of the Hall resistance observed at two-dimensional electron systems. We use a semi-analytical model based on the interaction theory of the integer quantized Hall effect to investigate the existence of the anomalous, \emph{i.e} overshoot, Hall resistance $R_{H}$. The observation of the overshoot resistance at low magnetic field edge of the plateaus is elucidated by means of overlapping evanescent incompressible strips, formed due to strong magnetic fields and interactions. Utilizing a self-consistent numerical scheme we also show that, if the magnetic field is decreased the $R_{H}$ decreases to its expected value. The effects of the sample width, temperature, disorder strength and magnetic field on the overshoot peaks are investigated in detail. Based on our findings, we predict a controllable procedure to manipulate the maxima of the peaks, which can be tested experimentally. Our model does not depend on specific and intrinsic properties of the material, provided that a single particle gap exists.

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preprint2010arXiv

The effect of disorder within the interaction theory of integer quantized Hall effect

We study effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. Short range part of the single impurity potential is used to define the conductivity tensor elements within the self-consistent Born approximation, whereas the long range part is treated self-consistently at the Hartree level. Using the simple, however, fundamental Thomas-Fermi screening, we find that the long range disorder potential is well screened. While, the short range part is approximately unaffected by screening and is suitable to define the mobility at vanishing magnetic fields. In light of these range dependencies we discuss the extend of the quantized Hall plateaus considering the "mobility" of the wafer and the width of the sample, by re-formulating the Ohm's law at low temperatures and high magnetic fields. We find that, the plateau widths mainly depend on the long range fluctuations of the disorder, whereas the importance of density of states broadening is less pronounced and even is predominantly suppressed. These results are in strong contrast with the conventional single particle pictures. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the level broadening is negligible.

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preprint2009arXiv

Exchange-correlation enhancement of the Lande-g* factor in integer quantized Hall plateaus

We study the emergent role of many-body effects on a two dimensional electron gas (2DEG) within the Thomas-Fermi-Poisson approximation, including both the exchange and correlation interactions in the presence of a strong perpendicular magnetic field. It is shown that, the indirect interactions widen the odd-integer incompressible strips spatially, whereas the even-integer filling factors almost remain unaffected.

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preprint2009arXiv

Microscopic theory of the activated behavior of the quantized Hall effect

The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model. We investigate the variation of the activation energy depending on the width of samples in the range of $2d\sim [1-10] μm$. We show that the largest activation energy of high-mobility narrow samples, is at the low field edge of Hall filling factor 2 plateau (exceeding half of the cyclotron energy), whereas for relatively wide samples the higher activation energy is obtained at the high field edge of Hall plateau. In contrast to the single-particle theories based on the localization of electronic states, we found that the activation energy is almost independent of the properties of the density of states.

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