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Researcher profile

A. Ron

A. Ron contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

7 published item(s)

preprint2016arXiv

Tunneling into a quantum confinement created by a single-step nano-lithography of conducting oxide interfaces

A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface where a constriction is patterned in the electron liquid. We find that an additional back-gating can further confine the electron liquid into an isolated island. Conductance and differential conductance measurements show resonant tunneling through the island. The data at various temperatures and magnetic fields are analyzed and the effective island size is found to be of the order of 10nm. The magnetic field dependence suggests absence of spin degeneracy in the island. Our method is suitable for creating superconducting and oxide-interface based electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strong correlations elucidate the electronic structure and phase-diagram of LaAlO3/SrTiO3 interface

The interface between the two band insulators SrTiO3 and LaAlO3 unexpectedly has the properties of a two dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which controls the number of electrons added or removed from the interface. The gate bias - temperature (Vg, T) phase diagram is characterized by a dome-shaped region where superconductivity occurs, i.e., Tc has a non-monotonic dependence on Vg, similar to many unconventional superconductors. In this communication the frequency of the quantum resistance-oscillations versus inverse magnetic field is reported for various Vg. This frequency follows the same nonmonotonic behavior as Tc; similar trend is seen in the low field limit of the Hall coefficient. We theoretically show that electronic correlations result in a non-monotonic population of the mobile band, which can account for the experimental behavior of the normal transport properties and the superconducting dome.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anomalous magnetic ground state in LaAlO3/SrTiO3 interface probed by transport through nanowires

Resistance as a function of temperature down to 20mK and magnetic fields up to 18T for various carrier concentrations is measured for nanowires made from the SrTiO3/LaAlO3 interface using a hard mask shadow deposition technique. The narrow width of the wires (of the order of 50nm) allows us to separate out the magnetic effects from the dominant superconducting ones at low magnetic fields. At this regime hysteresis loops are observed along with the superconducting transition. From our data analysis we find that the magnetic order probed by the giant magnetoresistance (GMR) effect vanishes at TCurie = 954 mK. This order is not a simple ferromagnetic state but consists of domains with opposite magnetization having a preferred in-plane orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

One-dimensional Quantum Wire Formed at the Boundary Between Two Insulating LaAlO3/SrTiO3 Interfaces

We grow a tiled structure of insulating two dimensional LaAlO3/SrTiO3 interfaces composed of alternating one and three LaAlO3 unit cells. The boundary between two tiles is conducting. At low temperatures this conductance exhibits quantized steps as a function of gate voltage indicative of a one dimensional channel. The step size of half the quantum of conductance is an evidence for absence of spin degeneracy.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect

Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic field. The standard theoretical considerations fail to explain the observed behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Shubnikov-de Haas oscillations in SrTiO3\LaAlO3 interface

Quantum magnetic oscillations in SrTiO3/\LaAlO3 interface are observed. The evolution of their frequency and amplitude at various gate voltages and temperatures is studied. The data are consistent with the Shubnikov de-Haas theory. The Hall resistivity rho exhibits nonlinearity at low magnetic field. It is fitted assuming multiple carrier contributions. The comparison between the mobile carrier density inferred from the Hall data and the oscillation frequency suggests multiple valley and spin degeneracy. The small amplitude of the oscillations is discussed in the framework of the multiple band scenario.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Elimination, reversal, and directional bias of optical diffraction

We experimentally demonstrate the manipulation of optical diffraction, utilizing the atomic thermal motion in a hot vapor medium of electromagnetically-induced transparency (EIT). By properly tuning the EIT parameters, the refraction induced by the atomic motion may completely counterbalance the paraxial free-space diffraction and by that eliminates the effect of diffraction for arbitrary images. By further manipulation, the diffraction can be doubled, biased asymmetrically to induced deflection, or even reversed. The latter allows an experimental implementation of an analogy to a negative-index lens.

0 citations0 reviewsNo code linkedOpen access