Researcher profile

A. Durand

A. Durand contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

ACReL: Adversarial Conditional value-at-risk Reinforcement Learning

In the classical Reinforcement Learning (RL) setting, one aims to find a policy that maximizes its expected return. This objective may be inappropriate in safety-critical domains such as healthcare or autonomous driving, where intrinsic uncertainties due to stochastic policies and environment variability may lead to catastrophic failures. This can be addressed by using the Conditional-Value-at-Risk (CVaR) objective to instill risk-aversion in learned policies. In this paper, we propose Adversarial Cvar Reinforcement Learning (ACReL), a novel adversarial meta-algorithm to optimize the CVaR objective in RL. ACReL is based on a max-min between a policy player and a learned adversary that perturbs the policy player's state transitions given a finite budget. We prove that, the closer the players are to the game's equilibrium point, the closer the learned policy is to the CVaR-optimal one with a risk tolerance explicitly related to the adversary's budget. We provide a gradient-based training procedure to solve the proposed game by formulating it as a Stackelberg game, enabling the use of deep RL architectures and training algorithms. Empirical experiments show that ACReL matches a CVaR RL state-of-the-art baseline for retrieving CVaR optimal policies, while also benefiting from theoretical guarantees.

preprint2020arXiv

Broad diversity of near-infrared single-photon emitters in silicon

We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.