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A. Benali

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Published work

3 published item(s)

preprint2022arXiv

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$

We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.

preprint2021arXiv

${}^{31}$P NMR investigation of quasi-two-dimensional magnetic correlations in $T_2$P$_2$S$_6$ ($T$ = Mn & Ni)

We report the anomalous breakdown in the scaling of the microscopic magnetic susceptibility, as measured via the ${}^{31}$P nuclear magnetic resonance (NMR) shift $K$, with the bulk magnetic susceptibility $χ$ in the paramagnetic state of Mn$_2$P$_2$S$_6$. This anomaly occurs near $T_\mathrm{max} \sim 117$ K the maximum in $χ(T)$ and is therefore associated with the onset of quasi-two-dimensional (quasi-2D) magnetic correlations. The spin-lattice relaxation rate divided by temperature $(T_1T)^{-1}$ in Mn$_2$P$_2$S$_6$ exhibits broad peak-like behavior as a function of temperature, qualitatively following $χ$, but displaying no evidence of critical slowing down above the Néel temperature $T_N$. In the magnetic state of Mn$_2$P$_2$S$_6$, NMR spectra provide good evidence for 60 degree rotation of stacking-fault-induced magnetic domains, as well as observation of the spin-flop transition that onsets at 4 T. The temperature-dependent critical behavior of the internal hyperfine field at the P site in Mn$_2$P$_2$S$_6$ is consistent with previous measurements and the two-dimensional anisotropic Heisenberg model. In a sample of Ni$_2$P$_2$S$_6$, we observe only two magnetically split resonances in the magnetic state, demonstrating that the multiple-peaked NMR spectra previously associated with 60 degree rotation of stacking faults is sample dependent. Finally, we report the observation of a spin-flop-induced splitting of the NMR spectra in Ni$_2$P$_2$S$_6$, with an onset spin-flop field of $H_\mathrm{sf} = 14$ T.

preprint2020arXiv

Broad diversity of near-infrared single-photon emitters in silicon

We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.