Source author record

A. Benali

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

Catalog footprint

Research overview

3works
5topics
4close collaborators

Published work

3 publications

preprint2022arXiv

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7×105cm2/Vs7\times10^5cm^2/Vs

We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.

preprint2021arXiv

31{}^{31}P NMR investigation of quasi-two-dimensional magnetic correlations in T2T_2P2_2S6_6 (TT = Mn & Ni)

We report the anomalous breakdown in the scaling of the microscopic magnetic susceptibility, as measured via the 31{}^{31}P nuclear magnetic resonance (NMR) shift KK, with the bulk magnetic susceptibility χχ in the paramagnetic state of Mn2_2P2_2S6_6. This anomaly occurs near Tmax∼117T_\mathrm{max} \sim 117 K the maximum in χ(T)χ(T) and is therefore associated with the onset of quasi-two-dimensional (quasi-2D) magnetic correlations. The spin-lattice relaxation rate divided by temperature (T1T)−1(T_1T)^{-1} in Mn2_2P2_2S6_6 exhibits broad peak-like behavior as a function of temperature, qualitatively following χχ, but displaying no evidence of critical slowing down above the Néel temperature TNT_N. In the magnetic state of Mn2_2P2_2S6_6, NMR spectra provide good evidence for 60 degree rotation of stacking-fault-induced magnetic domains, as well as observation of the spin-flop transition that onsets at 4 T. The temperature-dependent critical behavior of the internal hyperfine field at the P site in Mn2_2P2_2S6_6 is consistent with previous measurements and the two-dimensional anisotropic Heisenberg model. In a sample of Ni2_2P2_2S6_6, we observe only two magnetically split resonances in the magnetic state, demonstrating that the multiple-peaked NMR spectra previously associated with 60 degree rotation of stacking faults is sample dependent. Finally, we report the observation of a spin-flop-induced splitting of the NMR spectra in Ni2_2P2_2S6_6, with an onset spin-flop field of Hsf=14H_\mathrm{sf} = 14 T.

preprint2020arXiv

Broad diversity of near-infrared single-photon emitters in silicon

We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-μμm range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.