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Paper detail

Voltage-controlled antiferromagnetism in magnetic tunnel junctions

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

preprint2021arXivOpen access
Meng XuMingen LiPravin KhanalAli HabibogluBlake InsanaYuzan XiongThomas PetersonJason C. MyersDeborah OrtegaHongwei QuC. L. ChienWei ZhangJian-Ping WangW. G. Wang
cond-mat.mes-hallcond-mat.mtrl-sci
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Authors

Meng XuMingen LiPravin KhanalAli HabibogluBlake InsanaYuzan XiongThomas PetersonJason C. MyersDeborah OrtegaHongwei QuC. L. ChienWei ZhangJian-Ping WangW. G. Wang

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