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Jian-Ping Wang

Jian-Ping Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.med-phcond-mat.otherquant-ph

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Published work

25 published item(s)

preprint2022arXiv

Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal

Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a magnetron sputtering method at room temperature. The charge-to-spin ratio of PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic resonance (ST-FMR) technique. This ratio can further increase to 0.14 by inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease (Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with dopants.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$

We performed comprehensive theoretical and experimental studies of the electronic structure and the Fermi surface topology of two novel quantum materials, MoSi$_2$ and WSi$_2$. The theoretical predictions of the electronic structure in the vicinity of the Fermi level was verified experimentally by thorough analysis of the observed quantum oscillations in both electrical resistivity and magnetostriction. We established that the Fermi surface sheets in MoSi$_2$ and WSi$_2$ consist of 3D dumbbell-shaped hole-like pockets and rosette-shaped electron-like pockets, with nearly equal volumes. Based on this finding, both materials were characterized as almost perfectly compensated semimetals. In conjunction, the magnetoresistance attains giant values of $10^4$ and $10^5\,\%$ for WSi$_2$ and MoSi$_2$, respectively. In turn, the anisotropic magnetoresistance achieves $-95$ and $-98\,\%$ at $T=2\,$K and in $B=14\,$T for WSi$_2$ and MoSi$_2$, respectively. Furthermore, for both compounds we observed the Shoenberg effect in their Shubnikov-de Haas oscillations that persisted at as high temperature as $T=25\,$K in MoSi$_2$ and $T=12\,$K in WSi$_2$. In addition, we found for MoSi$_2$ a rarely observed spin-zero phenomenon. Remarkably, the electronic structure calculations revealed type-II Dirac cones located near 480 meV and 710 meV above the Fermi level in MoSi$_2$ and WSi$_2$, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Perpendicular magnetic tunnel junctions with multi-interface free layer

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, large tunneling magnetoresistance above 200% has been achieved after 400°C annealing.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN

In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anomalous temperature dependence of phonon pumping by ferromagnetic resonance in Co/Pd multilayers with perpendicular anisotropy

We demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]$_n$ multilayers ($n =$ 6, 11, 15, and 20) with large magnetostriction and perpendicular magnetic anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to standing wave phonons across the multilayer. The strength of this effect is enhanced by approximately a factor of 4 at 10 K compared to room temperature, which is anomalous in the sense that the temperature dependence of the magnetostriction predicts an enhancement that is less than a factor of 2. Lastly, we demonstrate that the damping enhancement is correlated with a shift in the ferromagnetic resonance field as predicted quantitatively from linear response theory.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Voltage-controlled antiferromagnetism in magnetic tunnel junctions

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic Particle Spectroscopy: A Short Review of Applications

Magnetic particle spectroscopy (MPS), also called magnetization response spectroscopy, is a novel measurement tool derived from magnetic particle imaging (MPI). It can be interpreted as a zero-dimensional version of MPI scanner. MPS was primarily designed for characterizing superparamagnetic iron oxide nanoparticles (SPIONs) regarding their applicability for MPI. In recent years, it has evolved into an independent, versatile, highly sensitive, inexpensive platform for biological and biomedical assays, cell labeling and tracking, and blood analysis. MPS has also developed into an auxiliary tool for magnetic imaging and hyperthermia by providing high spatial and temporal mappings of temperature and viscosity. Furthermore, other MPS-based applications are being explored such as magnetic fingerprints for product tracking and identification in supply chains. There are a variety of novel MPS-based applications being reported and demonstrated by many groups. In this short review, we highlighted some of the representative applications based on MPS platform, thereby providing a roadmap of this technology and our insights for researchers in this area.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Single-core Or Multi-core? A Mini Review on Magnetic Nanoparticles for Magnetic Particle Spectroscopy-based Bioassays

Magnetic particle spectroscopy (MPS) is a technology that derives from magnetic particle imaging (MPI) and thrives as a standalone platform for many biological and biomedical applications, benefiting from the facile preparation and chemical modification of magnetic nanoparticles (MNPs). In recent years, MPS has been reported in extensive literatures as a versatile platform for different bioassay purposes using artificially designed MNPs, where the MNPs serve as magnetic tracers, the surface functionalized reagents (e.g., antibodies, aptamers, peptides, etc.) and tiny probes capturing target analytes from biofluid samples. The biochemical complexes on MNP surfaces can be tailored for different bioassay requirements, while the design of MNPs are of less attention for MPS-based bioassays. For MNPs in most bioassay applications, superparamagnetism is prerequisite to avoid agglomerates and false magnetic signals. Single- and multi-core superparamagnetic nanoparticles (SPMNPs) are prevalently used in MPS-based bioassays. In this mini review, we compared the pros & cons of different MPS platforms realizing volumetric- and surface-based bioassays with single- and multi-core nanoparticles, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultra-high frequency magnetic resonance through strain-spin coupling in perpendicular magnetic multi-layers

The interaction between strain and spin has received intensive attention in the scientific community due to its abundant physical phenomena and huge technological impact. Until now, there is no experimental report on ultra-high frequency magnetic resonance through the strain-spin coupling for any technologically relevant perpendicular magnetic material. Here we report the experimental detection of the acoustic strain waves that have a response time on the order of 10 picoseconds in perpendicular magnetic [Co/Pd]n multilayers via a femtosecond laser pulse excitation. Through direct measurements of acoustic strain waves, we observe an ultra-high frequency magnetic resonance up to 60 GHz in [Co/Pd]n multilayers. We further report a theoretical model of the strain-spin interaction. Our model reveals that the energy could be transferred efficiently from the strain to the spins and well explains the existence of a steady resonance state through exciting the spin system. The physical origins of the resonance between strain waves and magnetic precession and the requested conditions for obtaining magnetic resonance within thin magnetic films have also been discussed after thorough analysis. These combined results point out a potential pathway to enable an extremely high frequency (EHF) magnetic resonance through the strain-spin coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Deterministic Field-free Switching of a Perpendicularly Magnetized Ferromagnetic Layer via the Joint Effects of Dzyaloshinskii-Moriya Interaction and Field-like Spin-orbit Torque: An Appraisal

Field-free switching of perpendicularly magnetized ferromagnetic layer by spin orbit torque (SOT) from the spin Hall effect (SHE) is of great interest in the applications of magnetic memory devices. In this paper, we investigate the deterministic SOT switching through the joint effects of Dzyaloshinskii-Moriya Interaction (DMI) and field-like torque (FLT) by micromagnetic simulations. We confirmed that within a certain range of DMI values and charge current densities, it is possible to deterministically switch the magnetization without the assistance external magnetic field. We show that the FLT could play an adverse role in blocking and slowing down the magnetization switching under certain cases of DMI and charge current-driven field-free switching. However, in other cases, FLT can assist DMI on the deterministic field-free SOT switching. In addition, it is found that FLT can effectively expand the current density window for a deterministic field-free SOT switching in the presence of DMI.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetic Weyl semimetals with diamond structure realized in spinel compounds

Diamond-structure materials have been extensively studied for decades, which form the foundation for most semiconductors and their modern day electronic devices. Here, we discover a e$_g$-orbital ($d_{z^2}$,$d_{x^2-y^2}$ ) model within the diamond lattice (e$_g$-diamond model) that hosts novel topological states. Specifically, the e$_g$-diamond model yields a 3D nodal cage (3D-NC), which is characterized by a $d$-$d$ band inversion protected by two types of degenerate states (i.e., e$_g$-orbital and diamond-sublattice degeneracies). We demonstrate materials realization of this model in the well-known spinel compounds (AB$_2$X$_4$), where the tetrahedron-site cations (A) form the diamond sub-lattice. An ideal half metal with one metallic spin channel formed by well-isolated and half-filled e$_g$-diamond bands, accompanied by a large spin gap (4.36 eV) is discovered in one 4-2 spinel compound (VMg$_2$O$_4$), which becomes a magnetic Weyl semimetal when spin-orbit coupling effect is further considered. Our discovery greatly enriches the physics of diamond structure and spinel compounds, opening a door to their application in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunable Magnetic Domain Walls for Therapeutic Neuromodulation at Cellular Level: Stimulating Neurons Through Magnetic Nanowires

Cellular-level neuron stimulation has attracted much attention in the areas of prevention, diagnosis and treatment of neurological disorders. Herein, we propose a spintronic neurostimulator based on the domain wall movement inside stationary magnetic nanowires driven by the spin transfer torque. The electromotive forces generated by the domain wall motion can serve as highly localized stimulation signals for neuron cells. Our simulation results show that the induced electric field from the domain wall motion in permalloy nanowires can reach up to 14 V/m, which is well above the reported threshold stimulation signal for clinical applications. The proposed device operates on a current range of several uA which is 10^3 times lower compared to magnetic stimulation by microcoils. The duration and amplitude of the stimulating signal can be controlled by adjusting the applied current density, the geometry of the nanowire, and the magnetic properties of the nanowire material.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Large-scale defects hidden inside a topological insulator grown onto a 2D substrate

Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. However, a major obstacle to realizing the promise of TIs is the thin-film materials' quality, which lags behind that of epitaxially grown semiconductors. In contrast to the latter systems, the Bi-chalcogenides form by van der Waals epitaxy, which allows them to successfully grow onto substrates with various degrees of lattice mismatch. This flexibility enables the integration of TIs into heterostructures with emerging materials, including two-dimensional materials. However, understanding and controlling local features and defects within the TI films is critical to achieving breakthrough device performance. Here, we report observations and modeling of large-scale structural defects in (Bi,Sb)$_2$Te$_3$ films grown onto hexagonal BN, highlighting unexpected symmetry-breaking rotations within the films and the coexistence of a second phase along grain boundaries. Using first-principles calculations, we show that these defects could have consequential impacts on the devices that rely on these TI films, and therefore they cannot be ignored.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Evaluation of Spin Waves and Ferromagnetic Resonance Contribution to the Spin Pumping in Ta/CoFeB Structure

The spin waves and ferromagnetic resonance (FMR) contribution to the spin pumping signal is studied in the Ta/CoFeB interface under different excitation bias fields. Ferromagnetic resonance is excited utilizing a coplanar waveguide and a microwave generator. Using a narrow waveguide of about 3 μm, magnetostatic surface spin waves with large wavevector (k) of about 0.81 μm^-1 are excited. A large k value results in dissociation of spin waves and FMR frequencies according to the surface spin wave dispersion relation. Spin waves and FMR contribution to the spin pumping are calculated based on the area under the Lorentzian curve fitting over experimental results. It is found that the FMR over spin waves contribution is about 1 at large bias fields in Ta/CoFeB structure. Based on our spin pumping results, we propose a method to characterize the spin wave decay constant which is found to be about 5.5 μm in the Ta/CoFeB structure at a bias field of 600 Oe.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Revealing the Anisotropic Thermal Conductivity of Black Phosphorus using the Time-Resolved Magneto-Optical Kerr Effect

Black phosphorus (BP) has emerged as a direct-bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of the anisotropic thermal properties of BP, however, is extremely challenging due to the lack of reliable and accurate measurement techniques to characterize anisotropic samples that are micrometers in size. Here, we report measurement results of the anisotropic thermal conductivity of bulk BP along three primary crystalline orientations, using the novel time-resolved magneto-optical Kerr effect (TR-MOKE) with enhanced measurement sensitivities. Two-dimensional beam-offset TR-MOKE signals from BP flakes yield the thermal conductivity along the zigzag crystalline direction to be 84 ~ 101 W/(m*K), nearly three times as large as that along the armchair direction (26 ~ 36 W/(m*K)). The through-plane thermal conductivity of BP ranges from 4.3 to 5.5 W/(m*K). The first-principles calculation was performed for the first time to predict the phonon transport in BP both along the in-plane zigzag and armchair directions and along the through-plane direction. This work successfully unveiled the fundamental mechanisms of anisotropic thermal transport along the three crystalline directions in bulk BP, as demonstrated by the excellent agreement between our first-principles-based theoretical predictions and experimental characterizations on the anisotropic thermal conductivities of bulk BP.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy

Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular, longitudinal, or transverse field. In order to rule out Joule heating effect, switching of the magnetization is also demonstrated using current pulses. It is found that the anti-damping torque correlated with spin Hall effect is very strong, and a spin Hall angle of about 0.12 is obtained. The field-like torque related with Rashba effect is negligible in this structure suggesting that the interface play a significant role in Rashba-like torque.

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preprint2014arXiv

Computing with spins and magnets

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

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preprint2014arXiv

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

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preprint2014arXiv

Searching for high magnetization density in bulk Fe: the new metastable Fe$_6$ phase

We report the discovery of a new allotrope of iron by first principles calculations. This phase has $Pmn2_1$ symmetry, a six-atom unit cell (hence the name Fe$_6$), and the highest magnetization density (M$_s$) among all known crystalline phases of iron. Obtained from the structural optimizations of the Fe$_3$C-cementite crystal upon carbon removal, $Pmn2_1$ Fe$_6$ is shown to result from the stabilization of a ferromagnetic FCC phase, further strained along the Bain path. Although metastable from 0 to 50 GPa, the new phase is more stable, at low pressures, than the other well-known HCP and FCC allotropes and smoothly transforms into the FCC phase under compression. If stabilized to room temperature, e.g., by interstitial impurities, Fe$_{6}$ could become the basis material for high M$_s$ rare-earth-free permanent magnets and high-impact applications such as, light-weight electric engine rotors or high-density recording media. The new phase could also be key to explain the enigmatic high M$_s$ of Fe$_{16}$N$_2$, which is currently attracting an intense research activity.

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preprint2013arXiv

Quantum Computation with Magnetic Clusters

We propose a complete, quantitative quantum computing system which satisfies the five DiVincenzo criteria. The model is based on magnetic clusters with uniaxial anisotropy, where standard, two-state qubits are formed utilizing the two lowest-lying states of an anisotropic potential energy. We outline the quantum dynamics required by quantum computing for single qubit structures, and then define a novel measurement scheme in which qubit sates can be measured by sharp changes in current as voltage across the cluster is varied. We then extend the single qubit description to multiple qubit interactions, facilitated specifically by a new entanglement method which propagates the controlled-NOT (C-NOT) quantum gate.

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preprint2012arXiv

Direct Observation of Giant Saturation Magnetization in Fe16N2

Magnetic materials with giant saturation magnetization have been a holy grail for magnetic researchers and condensed matter physicists for decades because of its great scientific and technological impacts. As described by the famous Slater-Pauling curve the material with highest Ms is the Fe65Co35 alloy. This was challenged in 1972 by a report on the compound Fe16N2 with Ms much higher than that of Fe65Co35. Following this claim, there have been enormous efforts to reproduce this result and to understand the magnetism of this compound. However, the reported Ms by different groups cover a broad range, mainly due to the unavailability of directly assessing Ms in Fe16N2. In this article, we report a direct observation of the giant saturation magnetization up to 2500 emu/cm3 using polarized neutron reflectometry (PNR) in epitaxial constrained Fe16N2 thin films prepared using a low-energy and surface-plasma-free sputtering process. The observed giant Ms is corroborated by a previously proposed Cluster + Atom model, the characteristic feature of which, namely, the directional charge transfer is evidenced by polarization-dependent x-ray absorption near edge spectroscopy (XANES).

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preprint2012arXiv

Giant saturation magnetization effect in epitaxial Fe16N2 thin films grown on MgO (001) substrate

Whether αdouble prime-Fe16N2 possesses a giant saturation magnetization (Ms) has been a daunting problem among magnetic researchers for almost 40 years, mainly due to the unshakable faith of famous Slater-Pauling (SP) curve and poor consistency on evaluating its Ms. Here we demonstrate that, using epitaxy and mis-fit strain imposed by an underlying substrate, the in-plane lattice constant of Fe16N2 thin films can be fine tuned to create favorable conditions for exceptionally large saturation magnetization. Combined study using polarized neutron reflectometry and X-ray diffraction shows that with increasing strain at the interface the Ms of these film can be changed over a broad range, from ~2.1T (non-high Ms) up to ~3.1T (high Ms). We suggest that the equilibrium in-plane lattice constant of Fe16N2 sits in the vicinity of the spin crossover point, in which a transition between low spin to high spin configuration of Fe sites can be realized with sensitive adjustment of crystal structure.

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preprint2012arXiv

Polarized neutron reflectometry study of Fe16N2 with Giant Saturation Magnetization prepared by N Inter-diffusion in Annealed Fe-N Thin Films

We report a synthesis route to grow iron nitride thin films with giant saturation magnetization (Ms) through an N inter-diffusion process. By post annealing Fe/Fe-N structured films grown on GaAs(001) substrates, nitrogen diffuses from the over-doped amorphous-like Fe-N layer into strained crystalline Fe layer and facilitates the development of metastable Fe16N2 phase. As explored by polarized neutron reflectometry, the depth-dependent Ms profile can be well described by a model with the presence of a giant Ms up to 2360 emu/cm3 at near-substrate interface, corresponding to the strained regions of these annealed films. This is much larger than the currently known limit (Fe65Co35 with Ms \sim 1900 emu/cm3). The present synthesis method can be used to develop writer materials for future magnetic recording application.

0 citations0 reviewsNo code linkedOpen access