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Pravin Khanal

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other cond-mat.str-el

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preprint2022arXiv

Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl

Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The doping of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, with a reduced interfacial roughness and substantial improved tunneling magnetoresistance. A two-level magnetoresistance is also observed in samples annealed at low temperature, which is believed to be related to the memristive effect of the tunnel barrier with impurities.

preprint2022arXiv

Perpendicular magnetic tunnel junctions with multi-interface free layer

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, large tunneling magnetoresistance above 200% has been achieved after 400°C annealing.

preprint2021arXiv

Voltage-controlled antiferromagnetism in magnetic tunnel junctions

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

preprint2020arXiv

Kondo physics in antiferromagnetic Weyl semimetal Mn3+xSn1-x films

Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date. Strongly correlated Weyl semimetals, particularly when magnetism is incorporated, offer a unique and fertile platform to explore emergent phenomena in novel topological matter and topological spintronics. The antiferromagnetic Weyl semimetal Mn3Sn exhibits many exotic physical properties such as a large spontaneous Hall effect and has recently attracted intense interest. In this work, we report synthesis of epitaxial Mn3+xSn1-x films with greatly extended compositional range in comparison with that of bulk samples. As Sn atoms are replaced by magnetic Mn atoms, the Kondo effect, which is a celebrated example of strong correlations, emerges, develops coherence, and induces a hybridization energy gap. The magnetic doping and gap opening lead to rich extraordinary properties as exemplified by the prominent DC Hall effects and resonance-enhanced terahertz Faraday rotation.