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L. E. Golub

L. E. Golub appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scicond-matcond-mat.otherphysics.app-ph

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Published work

36 published item(s)

preprint2021arXiv

Nonlinear optical absorption and photocurrents in topological insulators

Theory of optical absorption of linearly and circularly polarized light in surface and edge states in topological insulators is developed for a nonlinear in light intensity regime. The absorbance for surface states and the absorption width for the edge states both decease as $1/\sqrt{I}$ at high light intensity $I$. Elastic scattering of the photoexcited electrons and holes is taken into account. The absorption bleaching at high intensity is shown to be strongly suppressed by the elastic scattering. The linear-circular dichroism of one- and two-photon absorption in surface states, emerging in the nonlinear in intensity regime, decreases due to the elastic scattering of photocarriers. Absorption in the edge states of two-dimensional topological insulators also depends on the elastic scattering rate being suppressed when it is stronger that the energy relaxation rate. The linear dichroism - a dependence of the absorption length on the polarization plane orientation - is studied at arbitrary light intensities. We show that a degree of the linear dichroism is governed by the ratio of the elastic and inelastic relaxation times. The photocurrents generated in the edge states by both linearly and circularly polarized light change their intensity dependencies from the linear one at low $I$ to the $\propto \sqrt{I}$ at high intensities. The variation of the photocurrents with both polarization and intensity are strongly dependent on the elastic scattering rate. The considered effects can be observed in THz frequency range at laser intensities used in modern experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant ratchet magneto-photocurrent in graphene lateral superlattices

We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Semiclassical theory of the circular photogalvanic effect in gyrotropic systems

We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermi's golden rule for indirect intraband optical transitions with virtual intermediate states both in the conduction and valence bands. In the framework of the semiclassical approach, we apply a generalized Boltzmann equation with accounts for the Berry-curvature induced anomalous velocity, side jumps and skew scattering. The calculation is carried out for a wurtzite symmetry crystal. Both methods yield the same results for the CPGE current demonstrating consistency between the two approaches and applicability of the semiclassical theory for the description of nonlinear high-frequency transport.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical activity of quantum wells

We report on the observation of optical activity of quantum wells resulting in the conversion of the light polarization state controlled by the light propagation direction. The polarization conversion is detected in reflection measurements. We show that a pure $s$-polarized light incident on a quantum well is reflected as an elliptically polarized wave. The signal is drastically enhanced in the vicinity of the light-hole exciton resonance. We show that the polarization conversion is caused by the spin-orbit splitting of the light hole states and the birefringence of the studied structure. The bulk inversion asymmetry constant $β_{h} \approx 0.14$ eVÅ, is determined for the ground light hole subband in a 10 nm ZnSe/ZnMgSSe quantum well.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Weak antilocalization in two-dimensional systems with large Rashba splitting

We develop the theory of quantum transport and magnetoconductivity for two-dimensional electrons with an arbitrary large (even exceeding the Fermi energy), linear-in-momentum Rashba or Dresselhaus spin-orbit splitting. For short-range disorder potential, we derive the analytical expression for the quantum conductivity correction, which accounts for interference processes with an arbitrary number of scattering events and is valid beyond the diffusion approximation. We demonstrate that the zero-field conductivity correction is given by the sum of the universal logarithmic "diffusive" term and a "ballistic" term. The latter is temperature independent and encodes information about spectrum properties. This information can be extracted experimentally by measuring the conductivity correction at different temperatures and electron concentrations. We calculate the quantum correction in the whole range of classically weak magnetic fields and find that the magnetoconductivity is negative both in the diffusive and in the ballistic regimes, for an arbitrary relation between the Fermi energy and the spin-orbit splitting. We also demonstrate that the magnetoconductivity changes with the Fermi energy when the Fermi level is above the "Dirac point" and does not depend on the Fermi energy when it goes below this point.

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preprint2015arXiv

Circular photon drag effect in bulk tellurium

The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Microscopic models of the effect are developed for both intra- and inter-subband optical absorption in the valence band of tellurium. The shift contribution to the circular photon drag current is calculated. An observed decrease of the circular photon drag current with increase of the photon energy is explained by the theory for inter-subband optical transitions. Theoretical estimates of the circular photon drag current agree with the experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin dynamics and fluctuations in the streaming regime

Spin dynamics of two-dimensional electrons in moderate in-plane electric fields is studied theoretically. The streaming regime is considered, where each electron accelerates until reaching the optical phonon energy, then it emits an optical phonon, and a new period of acceleration starts. Spin-orbit interaction and elastic scattering result in anisotropic relaxation of electron spin polarization. The overall spin dynamics is described by a superposition of spin modes in the system. The relaxation time of the most long-living mode depends quasi-periodically on the inverse electric field. The spin modes can be conveniently revealed by means of spin noise spectroscopy. It is demonstrated that the spectrum of spin fluctuations consists of peaks with the low-frequency peak much narrower than satellite ones, and the widths of the peaks are determined by the decay times of the modes.

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preprint2015arXiv

Terahertz ratchet effects in graphene with a lateral superlattice

Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures

The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin dynamics in semiconductors in the streaming regime

We present results of a cross-disciplinary theoretical research at the interface of spin physics and hot-electron transport. A moderately strong electric field is assumed to provide the streaming regime where each free charge carrier, an electron or a hole, accelerates quasiballistically in the "passive" region until reaching the optical-phonon energy, then emits an optical phonon and starts the next period of acceleration. The inclusion of spin degree of freedom into the streaming-regime kinetics gives rise to rich and interesting spin-related phenomena. Firstly, in the streaming regime the spin relaxation is substantially modified, and the current-induced spin orientation is remarkably increased. Under short-pulsed photoexcitation at the bottom of conduction band the photoelectrons execute a periodic damped motion in the energy space with the period equal to the free flight time of an electron in the passive region. If the short optical pulse is circularly polarized so that the photocarriers are spin oriented, then the spin energy distribution is oscillating in time as well, which can be detected in the pump-probe time-resolved experiments. We show that the spin-orbit splitting of the conduction band becomes a source for additional spin oscillations, periodic or aperiodic depending on the value of electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Valley polarization induced second harmonic generation in graphene

The valley degeneracy of electron states in graphene stimulates intensive research of valley-related optical and transport phenomena. While many proposals on how to manipulate valley states have been put forward, experimental access to the valley polarization in graphene is still a challenge. Here, we develop a theory of the second optical harmonic generation in graphene and show that this effect can be used to measure the degree and sign of the valley polarization. We show that, at the normal incidence of radiation, the second harmonic generation stems from imbalance of carrier populations in the valleys. The effect has a specific polarization dependence reflecting the trigonal symmetry of electron valley and is resonantly enhanced if the energy of incident photons is close to the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Weak localization in low-symmetry quantum wells

Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped quantum wells. The theory is valid for both ballistic and diffusion regimes of weak localization in the whole range of classically weak magnetic fields. We demonstrate that in the presence of bulk inversion asymmetry the magnetoresistance is negative: The linear in the electron momentum spin-orbit interaction has no effect on the conductivity while the cubic in momentum coupling suppresses weak localization without a change of the correction sign. Random positions of impurities in the doping layers in symmetrically doped quantum wells produce electric fields which result in position-dependent Rashba coupling. This random spin-orbit interaction leads to spin relaxation which changes the sign of the anomalous magnetoconductivity. The obtained expressions allow determination of electron spin relaxation times in (110) and (111) quantum wells from transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interplay of Rashba/Dresselhaus spin splittings

The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two dimensional systems made of III-V, wurtzite and SiGe. We discuss the symmetry aspects of the linear and cubic in electron wavevector spin splitting in heterostructures prepared on (001)-, (110)-, (111)-, (113)-, (112)-, and (013)-oriented substrates and address the requirements for suppression of spin relaxation and realization of the persistent spin helix state. In experimental part of the paper we overview experimental results on the interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy: the method based on the phenomenological equivalence of the linear-in-wavevector spin splitting and several photogalvanic phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-dependent phenomena in semiconductors in strong electric fields

We develop a theory of spin-dependent phenomena in the streaming regime characterized by ballistic acceleration of electrons in the moderate electric field until they achieve the optical phonon energy and abruptly emit the phonons. It is shown that the Dyakonov-Perel spin relaxation is drastically modified in this regime, the current-induced spin orientation remarkably increases, reaches a high value ~2% in the electric field ~1kV/cm and falls with the further increase in the field. The spin polarization enhancement is caused by squeezing of the electron momentum distribution in the direction of drift. We also predict field-induced oscillatory dynamics of spin polarization of the photocarriers excited into the conduction band by a short circularly-polarized optical pulse.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate-controlled Persistent Spin Helix State in Materials with Strong Spin-Orbit Interaction

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gyrotropy and magneto-spatial dispersion effects at intersubband transitions in quantum wells

Gyrotropic properties of multiple quantum well structures are studied theoretically. Symmetry analysis is performed yielding the gyrotropy tensor components for structures grown along [001], [110] and [311] crystallographic directions. Angular dependences of circular dichroism and natural optical activity signals are established. Phenomenological model and microscopic theory based on spin-orbit splitting of size-quantized subbands are developed for photon energies close to the energy of the intersubband optical transition. Magneto-spatial dispersion effects arising from the diamagnetic shift of the intersubband energy gap linear in the electron momentum are also considered. It is demonstrated that the spectral dependence of the gyrotropy and magneto-spatial dispersion constants represents an asymmetrical peak with a degree of asymmetry governed by the mean electron energy. The estimates show that the considered effects are detectable in experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ratchet effects in two-dimensional systems with a lateral periodic potential

Radiation-induced ratchet electric currents have been studied theoretically in graphene with a periodic noncentrosymmetric lateral potential. The ratchet current generated under normal incidence is shown to consist of two contributions, one of them being polarization-independent and proportional to the energy relaxation time, and another controlled solely by elastic scattering processes and sensitive to both the linear and circular polarization of radiation. Two realistic mechanisms of electron scattering in graphene are considered. For short-range defects, the ratchet current is helicity-dependent but independent of the direction of linear polarization. For the Coulomb impurity scattering, the ratchet current is forbidden for the radiation linearly polarized in the plane perpendicular to the lateral-potential modulation direction. For comparison, the ratchet currents in a quantum well with a lateral superlattice are calculated at low temperatures with allowance for the dependence of the momentum relaxation time on the electron energy.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Weak localization of holes in high-mobility heterostructures

Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Optical and photogalvanic properties of graphene supperlattices formed by periodic strain

Graphene superlattices formed by periodic strain are considered theoretically. It is shown that electron energy spectrum consists of minibands obtained by folding of the cone at the boundaries of the superlattice Brillouin zone with very narrow anticrossing regions. Light absorption under direct interminiband transitions is shown to be frequency dependent and dichroic. Giant dichroism of absorption is demonstrated for doped graphene superlattices. Asymmetrical graphene superlattices act as quantum ratchets allowing for generation of photocurrent at absorption of normally incident light. The helicity-dependent photocurrent spectrum is calculated for doped superlattices with various asymmetries.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin orientation by electric current in (110) quantum wells

We develop a theory of spin orientation by electric current in (110)-grown semiconductor quantum wells. The controversy in the factor of two from two existed approaches is resolved by pointing out the importance of energy relaxation in this problem. The limiting cases of fast and slow energy relaxation relative to spin relaxation are considered for asymmetric (110) quantum wells. For symmetricly-doped structures the effect of spin orientation is shown to exist due to spatial fluctuations of the Rashba spin-orbit splitting. We demonstrate that the spin orientation depends strongly on the correlation length of these fluctuations as well as on the ratio of the energy and spin relaxation rates. The time-resolved kinetics of spin polarization by electric current is also governed by the correlation length being not purely exponential at slow energy relaxation. Electrical spin orientation in two-dimensional topological insulators is calculated and compared with the spin polarization induced by the magnetic field.

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preprint2011arXiv

Valley separation in graphene by polarized light

We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron scattering by impurities owing to the warping of electron energy spectrum. The valley current has strong polarization dependence, its direction is opposite for normally incident beams of orthogonal linear polarizations. In undoped graphene on a substrate with high susceptibility, electron-electron scattering leads to an additional contribution to the valley current that can dominate.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures

We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.

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preprint2010arXiv

Spin and transport effects in quantum microcavities with polarization splitting

Transport properties of exciton-polaritons in anisotropic quantum microcavities are considered theoretically. Microscopic symmetry of the structure is taken into account by allowing for both the longitudinal-transverse (TE-TM) and anisotropic splitting of polariton states. The splitting is equivalent to an effective magnetic field acting on polariton pseudospin, and polarization conversion in microcavities is shown to be caused by an interplay of exciton-polariton spin precession and elastic scattering. In addition, we considered the spin-dependent interference of polaritons leading to weak localization and calculated coherent backscattering intensities in different polarizations. Our findings are in a very good agreement with the recent experimental data.

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preprint2009arXiv

Nonlinear magneto-gyrotropic photogalvanic effect

We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models.

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preprint2009arXiv

Spin-orbit interaction and weak localization in heterostructures

Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of classically weak magnetic fields and for arbitrary strengths of bulk and structural inversion asymmetry contributions to the spin splitting. The theory serves for both diffusive and ballistic regimes of electron propagation taking into account coherent backscattering and nonbackscattering processes. The transition between weak localization and antilocalization regimes is analyzed. The manifestation of the mutual compensation of Rashba and Dresselhaus spin splittings in magnetoresistance is discussed. Perfect description of experimental data on anomalous magnetoresistance in high-mobility heterostructures is demonstrated. The in-plane magnetic field dependence of the conductivity caused by an interplay of the spin-orbit splittings and Zeeman effect is described theoretically.

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preprint2009arXiv

Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.

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preprint2008arXiv

Electric field control of spin-orbit splittings in GaAs/AlGaAs coupled quantum wells

Electron spin dynamics is investigated in n-i-n GaAs/AlGaAs coupled quantum wells. The electron spin dephasing time is measured as a function of an external electrical bias under resonant excitation of the 1sHH intrawell exciton using a time-resolved Kerr rotation technique. It is found a strong electron spin dephasing time anisotropy caused by an interference of the structure inversion asymmetry and the bulk inversion asymmetry. This anisotropy is shown to be controlled by an electrical bias. A theoretical analysis of electron spin dephasing time anisotropy is developed. The ratio of Rashba and Dresselhaus spin splittings is studied as a function of applied bias.

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preprint2006arXiv

Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells

Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Weak antilocalization in high-mobility two-dimensional systems

Theory of weak antilocalization is developed for high-mobility two-dimensional systems. Spin-orbit interaction of Rashba and Dresselhaus types is taken into account. Anomalous magnetoresistance is calculated in the whole range of classically weak magnetic fields and for arbitrary strength of spin-orbit splitting. Obtained expressions are valid for both ballistic and diffusive regimes of weak localization. Proposed theory includes both backscattering and nonbackscattering contributions to the conductivity. It is shown that magnetic field dependence of conductivity in high-mobility structures is not described by earlier theories.

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preprint2003arXiv

Spin Splitting in Symmetrical SiGe Quantum Wells

Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. The asymmetry is shown to result in spin splitting of both Rashba and Dresselhaus types in symmetrical SiGe quantum wells. Consequences of the spin splitting on spin relaxation are discussed.

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preprint2003arXiv

Spin-sensitive Bleaching and Spin-Relaxation in QW's

Spin-sensitive saturation of absorption of infrared radiation has been investigated in p-type GaAs QWs. It is shown that the absorption saturation of circularly polarized radiation is mostly controlled by the spin relaxation time of the holes. The saturation behavior has been investigated for different QW widths and in dependence on the temperature with the result that the saturation intensity substantially decreases with narrowing of QWs. Spin relaxation times were experimentally obtained by making use of calculated (linear) absorption coefficients for inter-subband transitions.

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preprint2003arXiv

Weak antilocalization in quantum wells in tilted magnetic fields

Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of electron spin splittings and spin relaxation times are found in the wide range of 2D density. Application of in-plane field is shown to destroy weak antilocalization due to competition of Zeeman and microroughness effects. Their relative contributions are separated, and the values of the in-plane electron g-factor and characteristic size of interface imperfections are found.

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preprint2002arXiv

Spin Splitting Induced Photogalvanic Effect in Quantum Wells

A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. The photocurrent excitation spectrum is shown to depend strongly on the form of the spin-orbit interaction. In the case of structure inversion asymmetry induced (Rashba) spin-splitting, the current is a linear function of light frequency near the absorption edge, and for the higher excitation energy the spectrum changes its sign and has a minimum. In contrast, when the bulk inversion asymmetry (Dresselhaus splitting) dominates, the photocurrent edge behavior is parabolic, and then the spectrum is sign-constant and has a maximum.

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