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L. E. Golub

L. E. Golub contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2021arXiv

Nonlinear optical absorption and photocurrents in topological insulators

Theory of optical absorption of linearly and circularly polarized light in surface and edge states in topological insulators is developed for a nonlinear in light intensity regime. The absorbance for surface states and the absorption width for the edge states both decease as $1/\sqrt{I}$ at high light intensity $I$. Elastic scattering of the photoexcited electrons and holes is taken into account. The absorption bleaching at high intensity is shown to be strongly suppressed by the elastic scattering. The linear-circular dichroism of one- and two-photon absorption in surface states, emerging in the nonlinear in intensity regime, decreases due to the elastic scattering of photocarriers. Absorption in the edge states of two-dimensional topological insulators also depends on the elastic scattering rate being suppressed when it is stronger that the energy relaxation rate. The linear dichroism - a dependence of the absorption length on the polarization plane orientation - is studied at arbitrary light intensities. We show that a degree of the linear dichroism is governed by the ratio of the elastic and inelastic relaxation times. The photocurrents generated in the edge states by both linearly and circularly polarized light change their intensity dependencies from the linear one at low $I$ to the $\propto \sqrt{I}$ at high intensities. The variation of the photocurrents with both polarization and intensity are strongly dependent on the elastic scattering rate. The considered effects can be observed in THz frequency range at laser intensities used in modern experiments.

preprint2020arXiv

Giant ratchet magneto-photocurrent in graphene lateral superlattices

We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states.

preprint2020arXiv

Semiclassical theory of the circular photogalvanic effect in gyrotropic systems

We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermi's golden rule for indirect intraband optical transitions with virtual intermediate states both in the conduction and valence bands. In the framework of the semiclassical approach, we apply a generalized Boltzmann equation with accounts for the Berry-curvature induced anomalous velocity, side jumps and skew scattering. The calculation is carried out for a wurtzite symmetry crystal. Both methods yield the same results for the CPGE current demonstrating consistency between the two approaches and applicability of the semiclassical theory for the description of nonlinear high-frequency transport.

preprint2012arXiv

Gate-controlled Persistent Spin Helix State in Materials with Strong Spin-Orbit Interaction

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.

preprint2012arXiv

Gyrotropy and magneto-spatial dispersion effects at intersubband transitions in quantum wells

Gyrotropic properties of multiple quantum well structures are studied theoretically. Symmetry analysis is performed yielding the gyrotropy tensor components for structures grown along [001], [110] and [311] crystallographic directions. Angular dependences of circular dichroism and natural optical activity signals are established. Phenomenological model and microscopic theory based on spin-orbit splitting of size-quantized subbands are developed for photon energies close to the energy of the intersubband optical transition. Magneto-spatial dispersion effects arising from the diamagnetic shift of the intersubband energy gap linear in the electron momentum are also considered. It is demonstrated that the spectral dependence of the gyrotropy and magneto-spatial dispersion constants represents an asymmetrical peak with a degree of asymmetry governed by the mean electron energy. The estimates show that the considered effects are detectable in experiments.

preprint2005arXiv

Weak antilocalization in high-mobility two-dimensional systems

Theory of weak antilocalization is developed for high-mobility two-dimensional systems. Spin-orbit interaction of Rashba and Dresselhaus types is taken into account. Anomalous magnetoresistance is calculated in the whole range of classically weak magnetic fields and for arbitrary strength of spin-orbit splitting. Obtained expressions are valid for both ballistic and diffusive regimes of weak localization. Proposed theory includes both backscattering and nonbackscattering contributions to the conductivity. It is shown that magnetic field dependence of conductivity in high-mobility structures is not described by earlier theories.

preprint2003arXiv

Spin Splitting in Symmetrical SiGe Quantum Wells

Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. The asymmetry is shown to result in spin splitting of both Rashba and Dresselhaus types in symmetrical SiGe quantum wells. Consequences of the spin splitting on spin relaxation are discussed.

preprint2003arXiv

Weak antilocalization in quantum wells in tilted magnetic fields

Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of electron spin splittings and spin relaxation times are found in the wide range of 2D density. Application of in-plane field is shown to destroy weak antilocalization due to competition of Zeeman and microroughness effects. Their relative contributions are separated, and the values of the in-plane electron g-factor and characteristic size of interface imperfections are found.