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B. J. van Wees

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Published work

68 published item(s)

preprint2024arXiv

Efficient Magnon Injection and Detection via the Orbital Rashba Edelstein Effect

Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba Edelstein effect efficiencies.

preprint2022arXiv

Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance

Van der Waals materials are a new platform to study two-dimensional systems, including magnetic order. Since the number of spins is relatively small, measuring the magnetization is challenging. Here we report spin Hall magnetoresistance (SMR) up to room temperature caused by the magnetic surface texture of exfoliated flakes of magnetic van der Waals materials. For the antiferromagnet FePS3 the SMR amounts to 0.1 % for an applied magnetic field of 7 T at 5 K which implies a substantial canting of the magnetic moments relative to the colinear antiferromagnetic order. The canting is substantial even for a magnetic field along the Néel vector, which illustrates the unique power of the SMR to detect magnetic surface textures in van der Waals magnets.

preprint2020arXiv

Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers

Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin- and charge-transport parameters already obtained in experiments, the spin currents can be guided in a controlled way. In particular, spin-current selectivities up to 102 can be achieved for measurements over a distance of 10μm under a moderate drift current density of 20μA/μm, meaning that the spin current in the arm that is off is only 1% of the current in the arm that is on. To illustrate the versatility of this approach, we show similar efficiencies in a device with four outputs and the possibility of multiplexer operation using spin drift. Finally, we explain how the effect can be optimized in graphene and two-dimensional semiconductors.

preprint2020arXiv

Colloquium: Spintronics in graphene and other two-dimensional materials

After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new two-dimensional (2D) compounds. This Colloquium reviews recent theoretical and experimental advances on electronic spin transport in graphene and related 2D materials, focusing on emergent phenomena in van der Waals heterostructures and the new perspectives provided by them. These phenomena include proximity-enabled spin-orbit effects, the coupling of electronic spin to light, electrical tunability, and 2D magnetism.

preprint2020arXiv

Nonlinear analog spintronics with van der Waals heterostructures

The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and measure up to 4th harmonic spin-signals via nonlocal spin-valve and Hanle spin-precession measurements. We demonstrate its application for analog signal processing over pure spin-signals such as amplitude modulation and heterodyne detection operations which require nonlinearity as an essential element. Furthermore, we show that the presence of nonlinearity in the spin-signal has an amplifying effect on the energy-dependent conductivity induced nonlinear spin-to-charge conversion effect. The interaction of the two spin-dependent nonlinear effects in the spin transport channel leads to a highly efficient detection of the spin-signal without using ferromagnets. These effects are measured both at 4K and room temperature, and are suitable for their applications as nonlinear circuit elements in the fields of advanced-spintronics and spin-based neuromorphic computing.

preprint2019arXiv

Modulation of magnon spin transport in a magnetic gate transistor

We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y$_{3}$Fe$_{5}$O$_{12}$, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the Py|YIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.

preprint2016arXiv

Direct electronic measurement of Peltier cooling and heating in graphene

Thermoelectric effects allow the generation of electrical power from waste heat and the electrical control of cooling and heating. Remarkably, these effects are also highly sensitive to the asymmetry in the density of states around the Fermi energy and can therefore be exploited as probes of distortions in the electronic structure at the nanoscale. Here we consider two-dimensional graphene as an excellent nanoscale carbon material for exploring the interaction between electronic and thermal transport phenomena, by presenting a direct and quantitative measurement of the Peltier component to electronic cooling and heating in graphene. Thanks to an architecture including nanoscale thermometers, we detected Peltier component modulation of up to 15 mK for currents of 20 $μ$A at room temperature and observed a full reversal between Peltier cooling and heating for electron and hole regimes. This fundamental thermodynamic property is a complementary tool for the study of nanoscale thermoelectric transport in two-dimensional materials.

preprint2016arXiv

Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures

The interaction between the itinerant spins in metals and localized spins in magnetic insulators thus far has only been explored in collinear spin systems, such as garnets. Here, we report the spin-Hall magnetoresistance (SMR) sensitive to the surface magnetization of the spin-spiral material, Cu_2OSeO_3. We experimentally demonstrate that the angular dependence of the SMR changes drastically at the transition between the helical spiral and the conical spiral phases. Furthermore, the sign and magnitude of the SMR in the conical spiral state are controlled by the cone angle. We show that this complex behaviour can be qualitatively explained within the SMR theory initially developed for collinear magnets. In addition, we studied the spin Seebeck effect (SSE), which is sensitive to the bulk magnetization. It originates from the conversion of thermally excited low-energy spin waves in the magnet, known as magnons, into the spin current in the adjacent metal contact (Pt). The SSE displays unconventional behavior where not only the magnitude but also the phase of the SSE vary with the applied magnetic field.

preprint2016arXiv

Proximity induced room-temperature ferromagnetism in graphene probed with spin currents

The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms, and shaping of graphene into nanoribbons with well-defined zigzag edges. A more robust and less invasive method utilizes the introduction of an exchange interaction by a ferromagnetic insulator in proximity with graphene. Here we present a direct measurement of the exchange interaction in room temperature ferromagnetic graphene. We study the spin transport in exfoliated graphene on a yttrium-iron-garnet substrate where the observed spin precession clearly indicates the presence and strength of an exchange field that is an unambiguous evidence of induced ferromagnetism. We describe the results with a modified Bloch diffusion equation and extract an average exchange field of the order of 0.2 T. Further, we demonstrate that a proximity induced 2D ferromagnet can efficiently modulate a spin current by controlling the direction of the exchange field. These results can create a building block for magnetic-gate tuneable spin transport in one-atom-thick spintronic devices.

preprint2016arXiv

Spin transport in fully hexagonal boron nitride encapsulated graphene

We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5 um long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pin-hole free nature of the thin-hBN as an efficient tunnel barrier.

preprint2015arXiv

Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction varies as the magnetic configuration changes from a parallel (P) to an anti-parallel (AP) configuration. Here we report the study on its as-yet-unexplored reciprocal effect, the magneto-Peltier effect, where the heat flow carried by the tunneling electrons is altered by changing the magnetic configuration of the MTJ. The magneto-Peltier signal that reflects the change in the temperature difference across the junction between the P and AP configurations scales linearly with the applied current in the small bias but is greatly enhanced in the large bias regime, due to higher-order Joule heating mechanisms. By carefully extracting the linear response which reflects the magneto-Peltier effect, and comparing it with the magneto-Seebeck measurements performed on the same device, we observe results consistent with Onsager reciprocity. We estimate a magneto-Peltier coefficient of 13.4 mV in the linear regime using a three-dimensional thermoelectric model. Our result opens up the possibility of programmable thermoelectric devices based on the Peltier effect in MTJs.

preprint2015arXiv

Control of spin current by a magnetic YIG substrate in NiFe/Al nonlocal spin valves

We study the effect of a magnetic insulator (Yttrium Iron Garnet - YIG) substrate on the spin transport properties of Ni$_{80}$Fe$_{20}$/Al nonlocal spin valve (NLSV) devices. The NLSV signal on the YIG substrate is about 2 to 3 times lower than that on a non magnetic SiO$_2$ substrate, indicating that a significant fraction of the spin-current is absorbed at the Al/YIG interface. By measuring the NLSV signal for varying injector-to-detector distance and using a three dimensional spin-transport model that takes spin current absorption at the Al/YIG interface into account we obtain an effective spin-mixing conductance $G_{\uparrow\downarrow}\simeq 5 - 8\times 10^{13}~Ω^{-1}$m$^{-2}$. We also observe a small but clear modulation of the NLSV signal when rotating the YIG magnetization direction with respect to the fixed spin polarization of the spin accumulation in the Al. Spin relaxation due to thermal magnons or roughness of the YIG surface may be responsible for the observed small modulation of the NLSV signal.

preprint2015arXiv

Long distance transport of magnon spin information in a magnetic insulator at room temperature

The transport of spin information has been studied in various materials, such as metals, semiconductors and graphene. In these materials, spin is transported by diffusion of conduction electrons. Here we study the diffusion and relaxation of spin in a magnetic insulator, where the large bandgap prohibits the motion of electrons. Spin can still be transported, however, through the diffusion of non-equilibrium magnons, the quanta of spin wave excitations in magnetically ordered materials. Here we show experimentally that these magnons can be excited and detected fully electrically in linear response, and can transport spin angular momentum through the magnetic insulator yttrium iron garnet (YIG) over distances as large as 40 micrometer. We identify two transport regimes: the diffusion limited regime for distances shorter than the magnon relaxation length, and the relaxation limited regime for larger distances. With a model similar to the diffusion-relaxation model for electron spin transport in (semi)conducting materials, we extract the magnon relaxation length lambda = 9.4 micrometer in a 200 nm thin YIG film at room temperature.

preprint2015arXiv

Magnetic field dependence of the magnon spin diffusion length in the magnetic insulator yttrium iron garnet

We investigated the effect of an external magnetic field on the diffusive spin transport by magnons in the magnetic insulator yttrium iron garnet (YIG), using a non-local magnon transport measurement geometry. We observed a decrease in magnon spin diffusion length $λ_m$ for increasing field strengths, where $λ_m$ is reduced from 9.6$\pm1.2$ $μ$m at 10 mT to 4.2$\pm0.6$ $μ$m at 3.5 T at room temperature. In addition, we find that there must be at least one additional transport parameter that depends on the external magnetic field. Our results do not allow us to unambiguously determine whether this is the magnon equilibrium density or the magnon diffusion constant. These results are significant for experiments in the more conventional longitudinal spin Seebeck geometry, since the magnon spin diffusion length sets the length scale for the spin Seebeck effect as well and is relevant for its understanding.

preprint2015arXiv

Spin Relaxation in Graphene with self-assembled Cobalt Porphyrin Molecules

In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene provides a desired platform for such studies via the magnetic moments of porphyrin-bound cobalt atoms. In this work a study of spin transport properties of graphene spin-valve devices functionalized with such CoPP molecules as a function of temperature via non-local spin-valve and Hanle spin precession measurements is reported. For the functionalized (molecular) devices, we observe a slight decrease in the spin relaxation time (τs), which could be an indication of enhanced spin-flip scattering of the electron spins in graphene in the presence of the molecular magnetic moments. The effect of the molecular layer is masked for low quality samples (low mobility), possibly due to dominance of Elliot-Yafet (EY) type spin relaxation mechanisms.

preprint2015arXiv

Towards the understanding of the origin of charge-current-induced spin voltage signals in the topological insulator Bi$_2$Se$_3$

Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained from efforts to electrically probe spin-momentum locking in the topological insulator Bi$_2$Se$_3$ using ferromagnetic contacts. Upon inverting the magnetization of the ferromagnetic contacts, we find a reversal of the measured voltage. Extensive analysis of the bias and temperature dependence of this voltage was done, considering the orientation of the magnetization relative to the current. Our findings indicate that the measured voltage can arise due to fringe-field-induced Hall voltages, different from current-induced spin polarization of the surface state charge carriers, as reported recently. Understanding the nontrivial origin of the measured voltage is important for realizing spintronic devices with topological insulators.

preprint2014arXiv

Absence of hyperfine effects in $^{13}$C-graphene spin valve devices

The carbon isotope $^{13}$C, in contrast to $^{12}$C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of $^{13}$C in natural carbon allotropes ($\sim$1 %). Chemical vapor deposition (CVD) allows for artificial synthesis of graphene solely from a $^{13}$C precursor, potentially amplifying the influence of the nuclear magnetic moments. In this work we study the effect of hyperfine interactions in pure $^{13}$C-graphene on its spin transport properties. Using Hanle precession measurements we determine the spin relaxation time and observe a weak increase of $τ_{s}$ with doping and a weak change of $τ_{s}$ with temperature, as in natural graphene. For comparison we study spin transport in pure $^{12}$C-graphene, also synthesized by CVD, and observe similar spin relaxation properties. As the signatures of hyperfine effects can be better resolved in oblique spin-valve and Hanle configurations, we use finite-element modeling to emulate oblique signals in the presence of a hyperfine magnetic field for typical graphene properties. Unlike in the case of GaAs, hyperfine interactions with $^{13}$C nuclei influence electron spin transport only very weakly, even for a fully polarized nuclear system. Also, in the measurements of the oblique spin-valve and Hanle effects no hyperfine features could be resolved. This work experimentally confirms the weak character of hyperfine interactions and the negligible role of $^{13}$C atoms in the spin dephasing processes in graphene.

preprint2014arXiv

Comparison between thermal and current driven spin-transfer torque in nanopillar metallic spin valves

We investigate the relation between thermal spin-transfer torque (TSTT) and the spin-dependent Seebeck effect (SDSE), which produces a spin current when a temperature gradient is applied across a metallic ferromagnet, in nanopillar metallic spin valves. Comparing its angular dependence (aSDSE) with the angle dependent magnetoresistance (aMR) measurements on the same device, we are able to verify that a small spin heat accumulation builds up in our devices. From the SDSE measurement and the observed current driven STT switching current of 0.8 mA in our spin valve devices, it was estimated that a temperature difference of 230 K is needed to produce an equal amount of TSTT. Experiments specifically focused on investigating TSTT show a response that is dominated by overall heating of the magnetic layer. Comparing it to the current driven STT experiments we estimate that only ~10% of the response is due to TSTT. This leads us to conclude that switching dominated by TSTT requires a direct coupling to a perfect heat sink to minimize the effect of overall heating. Nevertheless the combined effect of heating, STT and TSTT could prove useful for inducing magnetization switching when further investigated and optimized.

preprint2014arXiv

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.

preprint2014arXiv

Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states

It has been shown recently that in spin precession experiments, the interaction of spins with localized states can change the response to a magnetic field, leading to a modified, effective spin relaxation time and precession frequency. Here, we show that also the shape of the Hanle curve can change, so that it cannot be fitted with the solutions of the conventional Bloch equation. We present experimental data that shows such an effect arising at low temperatures in epitaxial graphene on silicon carbide with localized states in the carbon buffer layer. We compare the strength of the effect between materials with different growth methods, epitaxial growth by sublimation and by chemical vapor deposition. The presented analysis gives information about the density of localized states and their coupling to the graphene states, which is inaccessible by charge transport measurements and can be applied to any spin transport channel that is coupled to localized states.

preprint2014arXiv

Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet

The spin-Seebeck effect (SSE) in platinum (Pt) and tantalum (Ta) on yttrium iron garnet (YIG) has been investigated by both externally heating the sample (using an on-chip Pt heater on top of the device) as well as by current-induced heating. For SSE measurements, external heating is the most common method to obtain clear signals. Here we show that also by current-induced heating it is possible to directly observe the SSE, separate from the also present spin-Hall magnetoresistance (SMR) signal, by using a lock-in detection technique. Using this measurement technique, the presence of additional 2nd order signals at low applied magnetic fields and high heating currents is revealed. These signals are caused by current-induced magnetic fields (Oersted fields) generated by the used AC-current, resulting in dynamic SMR signals.

preprint2014arXiv

Spin dependent quantum interference in non-local graphene spin valves

Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum transport properties such as phase coherence and interference. Here we show that in a quantum coherent graphene nanostructure the non-local voltage is strongly modulated. Using non-local measurements, we separate the signal in spin dependent and spin independent contributions. We show that the spin dependent contribution is about two orders of magnitude larger than the spin independent one, when corrected for the finite polarization of the electrodes. The non-local spin signal is not only strongly modulated but also changes polarity as a function of the applied gate voltage. By locally tuning the carrier density in the constriction we show that the constriction plays a major role in this effect and indicates that it can act as a spin filter device. Our results show the potential of quantum coherent graphene nanostructures for the use in future spintronic devices.

preprint2014arXiv

Spin heat accumulation induced by tunneling from a ferromagnet

An electric current from a ferromagnet into a non-magnetic material can induce a spin-dependent electron temperature. Here it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the non-magnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

preprint2014arXiv

Spin transport in graphene nanostructures

Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures is highly unexplored. Here we study the spin injection and relaxation in nanostructured graphene with dimensions smaller than the spin relaxation length. For graphene nanoislands, where the edge length to area ratio is much higher than for standard devices, we show that enhanced spin-flip processes at the edges do not seem to play a major role in the spin relaxation. On the other hand, contact induced spin relaxation has a much more dramatic effect for these low dimensional structures. By studying the nonlocal spin transport through a graphene quantum dot we observe that the obtained values for spin relaxation are dominated by the connecting graphene islands and not by the quantum dot itself. Using a simple model we argue that future nonlocal Hanle precession measurements can obtain a more significant value for the spin relaxation time for the quantum dot by using high spin polarization contacts in combination with low tunneling rates.

preprint2014arXiv

Transition between 1D and 0D spin transport studied by Hanle precession

The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of the spin Bloch equation, which accounts for diffusion, relaxation and precession effects on spin. The analytic formula, however, is derived for an infinite length of the 1D spin channel. This is usually not satisfied in the real devices. The finite size of the channel length $l_{\text{dev}}$ leads to confinement of spins and increase of spin accumulation. Moreover, reflection of spins from the channel ends leads to spin interference, altering the characteristic precession lineshape. In this work we study the influence of finite $l_{\text{dev}}$ on the Hanle lineshape and show when it can lead to a two-fold discrepancy in the extracted spin coefficients. We propose the extension of the Hanle analytic formula to include the geometrical aspects of the real device and get an excellent agreement with a finite-element model of spin precession, where this geometry is explicitly set. We also demonstrate that in the limit of a channel length shorter than the spin relaxation length $λ_{s}$, the spin diffusion is negligible and a 0D spin transport description, with Lorentzian precession dependence applies. We provide a universal criterion for which transport description, 0D or 1D, to apply depending on the ratio $l_{\text{dev}}/λ_{s}$ and the corresponding accuracy of such a choice.

preprint2014arXiv

Verification of the Thomson-Onsager reciprocity relation for spin caloritronics

We investigate the Thomson-Onsager relation between the spin-dependent Seebeck and spin-dependent Peltier effect. To maintain identical device and measurement conditions we measure both effects in a single Ni$_{80}$Fe$_{20}$/Cu/Ni$_{80}$Fe$_{20}$ nanopillar spin valve device subjected to either an electrical or a thermal bias. In the low bias regime, we observe similar spin signals as well as background responses, as required by the Onsager reciprocity relation. However, at large biases, deviation from reciprocity occurs due to dominant nonlinear contribution of the temperature dependent transport coefficients. By systematic modeling of these nonlinear thermoelectric effects and measuring higher order thermoelectric responses for different applied biases, we identify the transition between the two regimes as the point at which Joule heating start to dominate over Peltier heating. Our results signify the importance of local equilibrium for the validity of this phenomenological reciprocity relation.

preprint2013arXiv

Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance

The effective field torque of an yttrium-iron-garnet film on the spin accumulation in an attached Pt film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental transverse and longitudinal resistances are well described by the theoretical model of SMR in terms of the direct and inverse spin-Hall effect, for different Pt thicknesses [3, 4, 8 and 35nm]. Adopting a spin-Hall angle of Pt $θ_{SH}=0.08$, we obtain the spin diffusion length of Pt ($λ=1.1\pm0.3$nm) as well as the real ($G_r=(7\pm3)\times10^{14}Ω^{-1}$m$^{-2}$) and imaginary part ($G_i=(5\pm3)\times10^{13}Ω^{-1}$m$^{-2}$) of the spin-mixing conductance and their ratio ($G_r/G_i=16\pm4$).

preprint2013arXiv

Fine structure of the lowest Landau level in suspended trilayer graphene

Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quantitative analysis of distinctness of the quantum Hall plateaus as a function of field yields a hierarchy of the filling factors: ν=6, 4, and 0 are the most pronounced, followed by ν=3, and finally ν=1, 2 and 5. Apart from the appearance of a ν=4 state, which is probably caused by a layer asymmetry, this sequence is in agreement with Hund's rules for ABC-stacked trilayer graphene.

preprint2013arXiv

Observation of the spin Peltier effect

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator Yttrium Iron Garnet (YIG), i.e. a heat current generated by a spin current flowing through a Platinum (Pt)|YIG interface. The effect can be explained by the spin torque that transforms the spin current in the Pt into a magnon current in the YIG. Via magnon-phonon interactions the magnetic fluctuations modulate the phonon temperature that is detected by a thermopile close to the interface. By finite-element modelling we verify the reciprocity between the spin Peltier and spin Seebeck effect. The observed strong coupling between thermal magnons and phonons in YIG is attractive for nanoscale cooling techniques.

preprint2013arXiv

Spin heat accumulation and spin-dependent temperatures in nanopillar spin valves

Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with spin-dependent conductivities very well describes spin and charge transport in such devices. In studies of the interaction between heat and spin transport, or spin caloritronics, until recently it was assumed that both spin species are always at the same temperature. Here we report the observation of different temperatures for the spin up (T_\uparrow) and spin down (T_\downarrow) electrons in a nanopillar spin valve subject to a heat current. The weak relaxation, especially at room temperature, of the spin heat accumulation (T_s = T_\uparrow-T_\downarrow) is essential for its detection in our devices. Using 3D finite element modeling spin heat accumulation (SHA) values of 120 mK and 350 mK are extracted at room temperature and 77 K, respectively, which is of the order of 10% of the total temperature bias over the pillar. This technique uniquely allows the study of inelastic spin scattering at low energies and elevated temperatures, which is not possible by spectroscopic methods.

preprint2013arXiv

Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization

The occurrence of Spin-Hall Magnetoresistance (SMR) in platinum (Pt) on top of yttrium iron garnet (YIG) has been investigated, for both in-plane and out-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8 and 35nm]. Our experiments show that the SMR signal directly depends on the in-plane and out-of-plane magnetization directions of the YIG. This confirms the theoretical description, where the SMR occurs due to the interplay of spin-orbit interaction in the Pt and spin-mixing at the YIG/Pt interface. Additionally, the sensitivity of the SMR and spin pumping signals on the YIG/Pt interface conditions is shown by comparing two different deposition techniques (e-beam evaporation and dc sputtering).

preprint2013arXiv

YIG thickness and frequency dependence of the spin-charge current conversion in YIG/Pt systems

We report the frequency dependence of the spin current emission in a hybrid ferrimagnetic insulator/normal metal system as function of the insulating layer thickness. The system is based on a yttrium iron garnet (YIG) film [0.2, 1, and 3 μm] grown by liquid-phase-epitaxy coupled with a spin current detector of platinum [6 nm]. A strong YIG thickness dependence of the efficiency of the spin pumping has been observed. The highest conversion factor ΔV/P_{abs} has been demonstrated for the thinner YIG (1.79 and 0.55 mV/mW^{-1} at 2.5 and 10 GHz, respectively) which presents an interest for the realisation of YIG-based devices. A strong YIG thickness dependence of the efficiency of the spin pumping has been also observed and we demonstrate the threshold frequency dependence of the three-magnon splitting process.

preprint2012arXiv

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide. An extensive set of spin-transport data for Si and Ge magnetic tunnel devices reveals a scaling with the tunnel resistance that violates the core feature of available theories, namely, the linear proportionality of the spin voltage to the injected spin current density. Instead, an anomalous scaling of the spin signal with the tunnel resistance is observed, following a power-law with an exponent between 0.75 and 1 over 6 decades. The scaling extends to tunnel resistance values larger than 10$^{9}$ $Ωμm^2$, far beyond the regime where the classical impedance mismatch plays a role. This scaling is incompatible with existing theory for direct tunnel injection of spins into the semiconductor. It also demonstrates conclusively that the large spin signal does not originate from two-step tunneling via localized states near the oxide/semiconductor interface. Control experiments on devices with a non-magnetic metal (Ru) electrode, instead of the semiconductor, exhibit no Hanle spin signal, showing that spin accumulation in localized states within the tunnel barrier is also not responsible. Control devices in which the spin current is removed by inserting a non-magnetic interlayer exhibit no Hanle signals either, proving that the spin signals observed in the standard devices are genuine and originate from spin-polarized tunneling and the resulting spin accumulation. Altogether, the scaling results suggest that the spin signal is proportional to the applied bias voltage, rather than the (spin) current.

preprint2012arXiv

Contact induced spin relaxation in Hanle spin precession measurements

In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements.

preprint2012arXiv

Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical doping

We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density significantly and alter the electronic properties of graphene. This finding helps to understand the observed device-to-device variation typically observed in graphene-based electronic devices. Second, we probe the effect of chemical modification in the electronic properties of graphene, grown by chemical vapour deposition on nickel. We find that both the chemisorption of hydrogen and the physisorption of porphyrin molecules strongly depress the conductance at low bias indicating the opening of a bandgap in graphene, paving the way towards the chemical engineering of the electronic properties of graphene.

preprint2012arXiv

Enhancement of spin relaxation time in hydrogenated graphene spin valve devices

Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We observe an up to three-fold increase of spin relaxation time tau_S after moderate hydrogen exposure. This increase of tau_S is accompanied by the decrease of charge and spin diffusion coefficients, resulting in a minor change in spin relaxation length lambda_S. At high carrier density we obtain lambda_S of 7 microns, which allows for spin detection over a distance of 11 microns. After hydrogenation a value of tau_S as high as 2.7 ns is measured at room temperature.

preprint2012arXiv

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.

preprint2012arXiv

Localized states influence spin transport in epitaxial graphene

We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

preprint2012arXiv

Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride

We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 μm at room temperature, the largest distance measured so far for graphene. Due to enhanced charge carrier diffusion, spin relaxation lengths are measured up to 4.5 μm. The relaxation times are similar to values for lower quality SiO$_2$ based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.

preprint2012arXiv

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.

preprint2012arXiv

Quantum Hall transport as a probe of capacitance profile at graphene edges

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas.

preprint2012arXiv

Spin transport in high quality suspended graphene devices

We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

preprint2012arXiv

Spin-dependent Seebeck coefficients of Ni_{80}Fe_{20} and Co in nanopillar spin valves

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni_{80}Fe_{20}) and cobalt (Co) using nanopillar spin valve devices. The devices were specifically designed to completely separate heat related effects from charge related effects. A pure heat current through the nanopillar spin valve, a stack of two ferromagnetic layers (F) separated by a non-magnetic layer (N), leads to a thermovoltage proportional to the spin-dependent Seebeck coefficient S_{S}=S_{\uparrow}-S_{\downarrow} of the ferromagnet, where S_{\uparrow} and S_{\downarrow} are the Seebeck coefficient for spin-up and spin-down electrons. By using a three-dimensional finite-element model (3D-FEM) based on spin-dependent thermoelectric theory, whose input material parameters were measured in separate devices, we were able to accurately determine a spin-dependent Seebeck coefficient of -1.8 microvolt/Kelvin and -4.5 microvolt/Kelvin for cobalt and permalloy, respectively corresponding to a Seebeck coefficient polarization P_{S}=S_{S}/S_{F} of 0.08 and 0.25, where S_{F} is the Seebeck coefficient of the ferromagnet. The results are in agreement with earlier theoretical work in Co/Cu multilayers and spin-dependent Seebeck and spin-dependent Peltier measurements in Ni_{80}Fe_{20}/Cu spin valve structures.

preprint2012arXiv

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$Ω$s in the high carrier density regime to several M$Ω$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $ν=2$ followed by $ν=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system.

preprint2011arXiv

A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

We present electronic transport measurements of single- and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm^2/V/s at 4.2 K. The excellent quality is supported by the early development of the nu = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4.2 K. We also present a new and accurate transfer technique of graphene to hexagonal boron nitride crystals. This technique is simple, fast and yields atomically flat graphene on boron nitride which is almost completely free of bubbles or wrinkles. The potential of commercially available boron nitride combined with our transfer technique makes high mobility graphene devices more accessible.

preprint2011arXiv

A road to hydrogenating graphene by a reactive ion etching plasma

We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect concentration. We emphasize the role of the self-bias of the graphene in suppressing the erosion of the akes during plasma processing. We show that under the chosen plasma conditions the process does not introduce considerable damage to the graphene sheet and that hydrogenation occurs primarily due to the hydrogen ions from the plasma and not due to fragmentation of water adsorbates on the graphene surface by highly accelerated plasma electrons. For this reason the hydrogenation level can be precisely controlled. The hydrogenation process presented here can be easily implemented in any RIE plasma system.

preprint2011arXiv

Anomalous-Nernst and anisotropic magnetoresistive heating in a lateral spin valve

We measured the anomalous-Nernst effect and anisotropic magnetoresistive heating in a lateral multiterminal Permalloy/Copper spin valve using all-electrical lock-in measurements. To interpret the results, a three-dimensional thermoelectric finite-element-model is developed. Using this model, we extract the heat profile which we use to determine the anomalous Nernst coefficient of Permalloy Rn=0.13 and also determine the maximum angle of theta=8 degrees of the magnetization prior to the switching process when an opposing non-collinear 10$^{\circ}$ magnetic field is applied.

preprint2011arXiv

Coexistence of electron and hole transport in graphene

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes.

preprint2011arXiv

Comparison between charge and spin transport in few layer graphene

Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article we present 4-probe local charge transport and non-local spin valve and spin precession measurements on lateral spin field-effect transistors (FET) on FLG. We study systematically the charge and spin transport properties depending on the number of layers and the electrical back gating of the device. We explain the charge transport measurements by taking the screening of scattering potentials into account and use the results to understand the spin data. The measured samples are between 3 and 20 layers thick and we include in our analysis our earlier results of the measurements on SLG for comparison. In our room temperature spin transport measurements we manage to observe spin signals over distances up to 10 u m and measure spin-relaxation times up to tau_s ~500 ps, about 4 times higher than in SLG. We calculate the density of states (DOS) of FLG using a zone-folding scheme to determine the charge diffusion coefficient D_C from the square resistance R_S. The resulting D_C and the spin diffusion coefficient D_S show similar values and depend only weakly on the number of layers and gate induced charge carriers. We discuss the implications of this on the identification of the spin-relaxation mechanism.

preprint2011arXiv

Cooling and heating with electron spins: Observation of the spin Peltier effect

The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. Connecting two materials with different Peltier coefficients causes a net heat flow towards or away from the interface, resulting in cooling or heating at the interface - the Peltier effect. Spintronics describes the transport of charge and angular momentum by making use of separate spin-up and spin-down channels. Recently, the merger of thermoelectricity with spintronics has given rise to a novel and rich research field named spin caloritronics. Here, we report the first direct experimental observation of refrigeration/heating driven by a spin current, a new spin thermoelectric effect which we call the spin Peltier effect. The heat flow is generated by the spin dependency of the Peltier coefficient inside the ferromagnetic material. We explored the effect in a specifically designed spin valve pillar structure by measuring the temperature using an electrically isolated thermocouple. The difference in heat flow between the two magnetic configurations leads to a change in temperature. With the help of 3-D finite element modeling, we extracted permalloy spin Peltier coefficients in the range of -0.9 to -1.3 mV. These results enable magnetic control of heat flow and provide new functionality for future spintronic devices.

preprint2011arXiv

Non-linear spin Seebeck effect due to spin-charge interaction in graphene

The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local lateral geometry, both in metallic systems and in semiconductors. To unlock the full potential of spintronics we must understand the interactions of spin with other degrees of freedom, going beyond the prototypical electrical spin injection and detection using magnetic contacts. Such interactions have been explored recently, for example, by using spin Hall or spin thermoelectric effects. Here we present the detection of non-local spin signals using non-magnetic detectors, via an as yet unexplored non-linear interaction between spin and charge. In analogy to the Seebeck effect, where a heat current generates a charge potential, we demonstrate that a spin current in a paramagnet leads to a charge potential, if the conductivity is energy dependent. We use graphene as a model system to study this effect, as recently proposed. The physical concept demonstrated here is generally valid, opening new possibilities for spintronics.

preprint2011arXiv

Nonlinear interaction of spin and charge currents in graphene

We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose graphene as a model system to study these effects and predict its magnitudes in nonlocal spin valve devices. The ambipolar behavior of graphene is used to demonstrate amplification of spin accumulation in p-n junctions by applying a charge current through nonmagnetic contacts.

preprint2011arXiv

Spin current induced magnetization oscillations in a paramagnetic disc

When electron spins are injected uniformly into a paramagnetic disc, they can precess along the demagnetizing field induced by the resulting magnetic moment. Normally this precession damps out by virtue of the spin relaxation which is present in paramagnetic materials. We propose a new mechanism to excite a steady-state form of this dynamics by injecting a constant spin current into this paramagnetic disc. We show that the rotating magnetic field generated by the eddy currents provide a torque which makes this possible. Unlike the ferromagnetic equivalent, the spin-torque-oscillator, the oscillation frequency is fixed and determined by the dimensions and intrinsic parameters of the paramagnet. The system possesses an intrinsic threshold for spin injection which needs to be overcome before steady-state precession is possible. The additional application of a magnetic field lowers this threshold. We discuss the feasibility of this effect in modern materials. Transient analysis using pump-probe techniques should give insight in the physical processes which accompany this effect.

preprint2011arXiv

Spin splitting in graphene studied by means of tilted magnetic-field experiments

We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic field experiments. Applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov de Haas amplitudes with increasing tilt angle we directly determine the product between the carrier cyclotron mass m* and the effective g-factor g* as a function of the charge carrier concentration. Using the cyclotron mass for a single-layer and a bilayer graphene we find an enhanced g-factor g* = 2.7 \pm 0.2 for both systems.

preprint2011arXiv

Thermal spin transport and spin-orbit interaction in ferromagnetic/non-magnetic metals

In this article we extend the currently established diffusion theory of spin-dependent electrical conduction by including spin-dependent thermoelectricity and thermal transport. Using this theory, we propose new experiments aimed at demonstrating novel effects such as the spin-Peltier effect, the reciprocal of the recently demonstrated thermally driven spin injection, as well as the magnetic heat valve. We use finite-element methods to model specific devices in literature to demonstrate our theory. Spin-orbit effects such as anomalous-Hall, -Nernst, anisotropic magnetoresistance and spin-Hall are also included in this model.

preprint2011arXiv

Thermoelectric detection of ferromagnetic resonance of a nanoscale ferromagnet

We present thermoelectric measurements of the heat dissipated due to ferromagnetic resonance of a Permalloy strip. A microwave magnetic field, produced by an on-chip coplanar strip waveguide, is used to drive the magnetization precession. The generated heat is detected via Seebeck measurements on a thermocouple connected to the ferromagnet. The observed resonance peak shape is in agreement with the Landau-Lifshitz-Gilbert equation and is compared with thermoelectric finite element modeling. Unlike other methods, this technique is not restricted to electrically conductive media and is therefore also applicable to for instance ferromagnetic insulators.

preprint2010arXiv

Interplay of Peltier and Seebeck effects in nanoscale nonlocal spin valves

We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second and third harmonic voltage response non locally, the model is experimentally examined. The results indicate that the combination of Peltier and Seebeck effects contributes significantly to the nonlocal baseline resistance. Moreover, we found that the second and third harmonic response signals can be attributed to Joule heating and temperature dependencies of both Seebeck coefficient and resistivity.

preprint2010arXiv

Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.

preprint2010arXiv

Local electrical characterization of resonant magnetization motion in a single ferromagnetic sub-micrometer particle in lateral geometry

In this article a detailed characterization of a magnetization motion in a single sub-micrometer and multi-terminal ferromagnetic structure in lateral geometry is performed in a GHz regime using direct DC characterization technique. We have shown applicability of the Stoner-Wohlfarth model to the magnetic nano-structure with large length to with ratio. Applying the model to experimental data we are able to extract relevant magnetization motion parameters and show a correlation between high frequency inductive currents and local magnetization. Additionally, DC voltage generated over the structure at the resonance, with external magnetic field under an angle to the shape anisotropy axis, is explained by the model.

preprint2010arXiv

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.

preprint2009arXiv

Bistable hysteresis and resistance switching in hydrogen gold junctions

Current-voltage characteristics of H2-Au molecular junctions exhibit intriguing steps around a characteristic voltage of 40 mV. Surprisingly, we find that a hysteresis is connected to these steps with a typical time scale > 10 ms. This time constant scales linearly with the power dissipated in the junction beyond an ofset power P_s = IV_s. We propose that the hysteresis is related to vibrational heating of both the molecule in the junction and a set of surrounding hydrogen molecules. Remarkably, we can engineer our junctions such that the hysteresis' characteristic time becomes >days. We demonstrate that reliable switchable devices can be built from such junctions.

preprint2009arXiv

Electronic spin transport in graphene field effect transistors

Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin flip processes at the device edges or the presence of an aluminium oxide layer on top of graphene in some samples. Lateral spin valve devices using a field effect transistor geometry allowed for the investigation of the spin relaxation as a function of the charge density, going continuously from metallic hole to electron conduction (charge densities of $n\sim 10^{12}$cm$^{-2}$) via the Dirac charge neutrality point ($n \sim 0$). The results are quantitatively described by a one dimensional spin diffusion model where the spin relaxation via the contacts is taken into account. Spin valve experiments for various injector/detector separations and spin precession experiments reveal that the longitudinal (T$_1$) and the transversal (T$_2$) relaxation times are similar. The anisotropy of the spin relaxation times $τ_\parallel$ and $τ_\perp$, when the spins are injected parallel or perpendicular to the graphene plane, indicates that the effective spin orbit fields do not lie exclusively in the two dimensional graphene plane. Furthermore, the proportionality between the spin relaxation time and the momentum relaxation time indicates that the spin relaxation mechanism is of the Elliott-Yafet type. For carrier mobilities of 2-5$\times 10^3$ cm$2^$/Vs and for graphene flakes of 0.1-2 $μ$m in width, we found spin relaxation times of the order of 50-200 ps, times which appear not to be determined by the extrinsic factors mentioned above.

preprint2008arXiv

Anisotropic spin relaxation in graphene

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B = 0 and B = 2 T shows a 20 % decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin orbit effective fields in the in-plane and out-of-plane directions.

preprint2008arXiv

The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive X-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism and proposing a model that can predict optimal annealing parameters for a certain heterostructure.

preprint2007arXiv

Persistence of the 0.7 anomaly of quantum point contacts in high magnetic fields

The spin degeneracy of the lowest subband that carries one-dimensional electron transport in quantum point contacts appears to be spontaneously lifted in zero magnetic field due to a phenomenon that is known as the 0.7 anomaly. We measured this energy splitting, and studied how it evolves into a splitting that is the sum of the Zeeman effect and a field-independent exchange contribution when applying a magnetic field. While this exchange contribution shows sample-to-sample fluctuations, it is for all QPCs correlated with the zero-field splitting of the 0.7 anomaly. This provides evidence that the splitting of the 0.7 anomaly is dominated by this field-independent exchange splitting.

preprint2006arXiv

The Magneto-coulomb effect in spin valve devices

We discuss the influence of the magneto-coulomb effect (MCE) on the magnetoconductance of spin valve devices. We show that MCE can induce magnetoconductances of several per cents or more, dependent on the strength of the coulomb blockade. Furthermore, the MCE-induced magnetoconductance changes sign as a function of gate voltage. We emphasize the importance of separating conductance changes induced by MCE from those due to spin accumulation in spin valve devices.

preprint2006arXiv

The role of Joule heating in the formation of nanogaps by electromigration

We investigate the formation of nanogaps in gold wires due to electromigration. We show that the breaking process will not start until a local temperature of typically 400 K is reached by Joule heating. This value is rather independent of the temperature of the sample environment (4.2-295 K). Furthermore, we demonstrate that the breaking dynamics can be controlled by minimizing the total series resistance of the system. In this way, the local temperature rise just before break down is limited and melting effects are prevented. Hence, electrodes with gaps < 2 nm are easily made, without the need of active feedback. For optimized samples, we observe quantized conductance steps prior the gap formation.

preprint2005arXiv

Separating spin and charge transport in single wall carbon nanotubes

We demonstrate spin injection and detection in single wall carbon nanotubes using a 4-terminal, non-local geometry. This measurement geometry completely separates the charge and spin circuits. Hence all spurious magnetoresistance effects are eliminated and the measured signal is due to spin accumulation only. Combining our results with a theoretical model, we deduce a spin polarization at the contacts of approximately 25 %. We show that the magnetoresistance changes measured in the conventional two-terminal geometry are dominated by effects not related to spin accumulation.