Abstract
By analyzing the in-plane field magnetoconductivity, zero field transport, and thermodynamic spin magnetization in 2D correlated electron system in high mobility Si-MOS samples, we have revealed a novel high energy scale , beyond the Fermi energy. In magnetoconductivity, we found a sharp onset of the novel regime above a density dependent temperature , the high-energy behavior that "mimics" the low-temperature diffusive interaction regime. The zero field resistivity temperature dependence exhibits an inflection point . In thermodynamic magnetization, the weak field spin susceptibility per electron, changes sign at . All three notable temperatures, , , and , behave critically , are close to each other, and are intrinsic to high mobility samples only; we therefore associate them with a novel energy scale caused by interactions in the 2DE system.
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