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Researcher profile

A. Yu. Kuntsevich

A. Yu. Kuntsevich contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.str-elcond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2022arXiv

Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy

We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we study the electron-spin relaxation dynamics without explicit excitation. The observed temperature dependence indicates the presence of localized states, which have an increased interaction with the surrounding nuclear spins. Time-resolved spin-noise spectroscopy is then applied to study the relaxation dynamics of the optically pumped nuclear-spin system. It shows a multi-exponential decay with time components, ranging from several seconds to hundreds of seconds. Further, we provide a measurement of the local magnetic field acting between the nuclear spins and discover a strong contribution of quadrupole effects. Finally, we apply the nuclear spin diffusion model, that allows us to estimate the concentration of the localized carrier states and to determine the nuclear spin diffusion constant characteristic for this system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

3D Hypersound Microscopy of Van der Waals Heterostructures

We employ here a picosecond ultrasonic technique to study Van der Waals heterostructures. Temporal variation of the reflection coefficient of the Al film that covers Van der Waals hBN/WSe$_2$/hBN heterostructures on a sapphire substrate after the femtosecond laser pulse excitation is carefully measured using an interferometric technique with spatial resolution. The laser pulse generates a broadband sound wave packet in aluminum film propagating perpendicular to the plane direction and partially reflecting from the heterostructural interfaces. The demonstrated technique has enough sensitivity to resolve a WSe$_2$ monolayer embedded in hBN. We apply a multilayered model of the optical and acoustical response that allows to evaluate the mechanical parameters, in particular, rigidity of interfaces, inaccessible from the other measurements. Mapping of the Fourier spectra of the response clearly visualizes different composition regions and can therefore serve as an acoustic tomography tool. Our findings demonstrate almost zero acoustic phonon dissipation below 150 GHz at the interfaces and in the layers that makes Van der Waals heterostructures perspective for nano-acoustical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonexponential photoluminescence dynamics in an inhomogeneous ensemble of excitons in WSe$_2$ monolayers

The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe$_2$ obtained by mechanical exfoliation on a Si/SiO$_2$ substrate is studied over a wide range of temperatures and excitation powers. It is shown that the dynamics is nonexponential and, for times $t$ exceeding $\sim$50 ps after the excitation pulse, is described by a dependence of the form $1/(t+t_0)$. Photoluminescence decay is accelerated with a decrease in temperature, as well as with a decrease in the energy of emitting states. It is shown that the observed dynamics cannot be described by a bimolecular recombination process, such as exciton--exciton annihilation. A model that describes the nonexponential photoluminescence dynamics by taking into account the spread of radiative recombination times of localized exciton states in a random potential gives good agreement with experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Density of states measurements for heavy subband of holes in HgTe quantum wells

Valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the $Γ$ point and poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned with gate voltage from light to heavy subband, the entropy increases dramatically, and the value of this increase gives an estimate for the density of states. The second method determines the density of states for heavy holes indirectly from the gate voltage dependence of the period of the Shubnikov-de Haas oscillations for light holes. The results obtained by both methods are in the reasonable agreement with each other. Our approaches can be applied to measure large effective carrier masses in other two-dimensional gated systems.

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preprint2015arXiv

Temperature derivative of the chemical potential and its magnetooscillations in two-dimensional system

We report first thermodynamic measurements of the temperature derivative of chemical potential (dμ/dT) in two-dimensional (2D) electron systems. In order to test the technique we have chosen Schottky gated GaAs/AlGaAs heterojunctions and detected experimentally in this 2D system quantum magnetooscillations of dμ/dT. We also present a Lifshits-Kosevitch type theory for the dμ/dT magnetooscillations in 2D systems and compare the theory with experimental data. The magnetic field dependence of the dμ/dT value appears to be sensitive to the density of states shape of Landau levels. The data in low magnetic field domain demonstrate brilliant agreement with theory for non-interacting Fermi gas with Lorentzian Landau level shape.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems

We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously $ρ_{xx}$ and $ρ_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a straightforward tool to disentangle spin and orbital effects. In particular, by changing the tilt angle we prove experimentally that in the field range $gμ_BB>k_BT$ the correction depends on modulus of magnetic field rather than on its direction, which is expected for a system with isotropic $g$-factor. In the high-field limit the correction behaves as $\ln (B)$, as expected theoretically (Lee, Ramakrishnan, Phys. Rev. B{\bf 26}, 4009 (1982)). Our data prove that the diffusive electron-electron interaction correction to conductivity is not solely responsible for the huge and temperature dependent magnetoresistance in parallel field, typically observed in Si-MOSFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-Droplet State of an Interacting 2D Electron System

We report thermodynamic magnetization measurements of two-dimensional electrons in several high mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density range from insulating to deep into the metallic phase. The temperature and magnetic field dependence of the magnetization is consistent with the formation of large-spin droplets in the insulating phase. These droplets melt in the metallic phase with increasing density and temperature, although they survive up to large densities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermodynamic magnetization of two-dimensional electron gas measured over wide range of densities

We report measurements of dm/dn in Si MOSFET, where m is the magnetization of the two-dimensional electron gas and n is its density. We extended the density range of measurements from well in the metallic to deep in the insulating region. The paper discusses in detail the conditions under which this extension is justified, as well as the corrections one should make to extract dm/dn properly. At low temperatures, dm/dn was found to be strongly nonlinear already in weak magnetic fields, on a scale much smaller than the characteristic scales, expected for interacting two-dimensional electron gas. Surprisingly, this nonlinear behavior exists both in the dielectric, and in the metallic region. These observations, we believe, provide evidence for strong coupling of the itinerant and localized electrons in Si-MOSFET.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BTτ/\hbar>1. The MR grows with field and exhibits a maximum at fields B>1/μ, where μis the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs- based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field, and found qualitative similarities and discrepancies.

0 citations0 reviewsNo code linkedOpen access