Researcher profile

L. A. Morgun

L. A. Morgun contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Novel Energy Scale in the Interacting 2D Electron System Evidenced from Transport and Thermodynamic Measurements

By analyzing the in-plane field magnetoconductivity, zero field transport, and thermodynamic spin magnetization in 2D correlated electron system in high mobility Si-MOS samples, we have revealed a novel high energy scale $T^*$, beyond the Fermi energy. In magnetoconductivity, we found a sharp onset of the novel regime $δσ(B,T) \propto (B/T)^2$ above a density dependent temperature $T_{\rm kink}(n)$, the high-energy behavior that "mimics" the low-temperature diffusive interaction regime. The zero field resistivity temperature dependence exhibits an inflection point $T_{\rm infl}$. In thermodynamic magnetization, the weak field spin susceptibility per electron, $\partial χ/\partial n$ changes sign at $T_{dM/d n}$. All three notable temperatures, $T_{\rm kink}$, $T_{\rm infl}$, and $T_{d M/ d n}$, behave critically $\propto (n-n_c)$, are close to each other, and are intrinsic to high mobility samples only; we therefore associate them with a novel energy scale $T^*$ caused by interactions in the 2DE system.

preprint2013arXiv

Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems

We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously $ρ_{xx}$ and $ρ_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a straightforward tool to disentangle spin and orbital effects. In particular, by changing the tilt angle we prove experimentally that in the field range $gμ_BB>k_BT$ the correction depends on modulus of magnetic field rather than on its direction, which is expected for a system with isotropic $g$-factor. In the high-field limit the correction behaves as $\ln (B)$, as expected theoretically (Lee, Ramakrishnan, Phys. Rev. B{\bf 26}, 4009 (1982)). Our data prove that the diffusive electron-electron interaction correction to conductivity is not solely responsible for the huge and temperature dependent magnetoresistance in parallel field, typically observed in Si-MOSFETs.