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Mercouri G. Kanatzidis

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Published work

31 published item(s)

preprint2024arXiv

Noncollinear electric dipoles in a polar, chiral phase of CsSnBr$_3$ perovskite

Polar and chiral crystal symmetries confer a variety of potentially useful functionalities upon solids by coupling otherwise noninteracting mechanical, electronic, optical, and magnetic degrees of freedom. We describe two unstudied phases of the 3D perovskite, CsSnBr$_3$, which emerge below 85 K due to the formation of Sn(II) lone pairs and their interaction with extant octahedral tilts. Phase II (77 K<$T$<85 K, space group $P2_1/m$) exhibits ferroaxial order driven by a noncollinear pattern of lone pair-driven distortions within the plane normal to the unique octahedral tilt axis, preserving the inversion symmetry observed at higher temperatures. Phase I ($T$<77 K, space group $P2_1$) additionally exhibits ferroelectric order due to distortions along the unique tilt axis, breaking both inversion and mirror symmetries. This polar and chiral phase exhibits second harmonic generation from the bulk and a large, intrinsic polarization$-$electrostriction coefficient along the polar axis ($Q_{22}\approx$1.1 m$^4$ C$^{-2}$), resulting in acute negative thermal expansion ($α_V=-9\times10^{-5}$ K$^{-1}$) through the onset of spontaneous polarization. The unprecedented structures of phases I and II were predicted by recursively following harmonic phonon instabilities to generate a tree of candidate structures and subsequently corroborated by synchrotron X-ray powder diffraction and polarized Raman and $^{81}$Br nuclear quadrupole resonance spectroscopies. Relativistic electronic structure scenarios compatible with reported photoluminescence measurements are discussed. Together, the polar symmetry, small bandgap, large spin-orbit splitting of Sn 5$p$ orbitals, and predicted strain sensitivity of the symmetry-breaking distortions suggest bulk samples and epitaxial films of CsSnBr$_3$ or its neighboring solid solutions as strong candidates for bulk Rashba effects.

preprint2022arXiv

Direct visualization of ultrafast lattice ordering triggered by an electron-hole plasma in 2D perovskites

Direct visualization of ultrafast coupling between charge carriers and lattice degrees of freedom in photo-excited semiconductors has remained a long-standing challenge and is critical for understanding the light-induced physical behavior of materials under extreme non-equilibrium conditions. Here, by monitoring the evolution of the wave-vector resolved ultrafast electron diffraction intensity following above-bandgap photo-excitation, we obtain a direct visual of the structural dynamics in monocrystalline 2D perovskites. Analysis reveals a surprising, light-induced ultrafast lattice ordering resulting from a strong interaction between hot-carriers and the perovskite lattice, which induces an in-plane octahedra rotation, towards a more symmetric phase. Correlated ultrafast spectroscopy performed at the same carrier density as ultrafast electron diffraction reveals that the creation of a hot and dense electron-hole plasma triggers lattice ordering at short timescales by modulating the crystal cohesive energy. Finally, we show that the interaction between the carrier gas and the lattice can be altered by tailoring the rigidity of the 2D perovskite by choosing the appropriate organic spacer layer.

preprint2022arXiv

Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition

Recently, anomalies in the temperature dependences of the carrier density and/or mobility derived from analysis of the magnetoresistivities using the conventional two-band model have been used to unveil intriguing temperature-induced Lifshitz transitions in various materials. For instance, two temperature-driven Lifshitz transitions were inferred to exist in the Dirac nodal-line semimetal ZrSiSe, based on two-band model analysis of the Hall magnetoconductivities where the second band exhibits a change in the carrier type from holes to electrons when the temperature decreases below T = 106 K and a dip is observed in the mobility versus temperature curve at T = 80 K. Here, we revisit the experiments and two-band model analysis on ZrSiSe. We show that the anomalies in the second band may be spurious, because the first band dominates the Hall magnetoconductivities at T > 80 K, making the carrier type and mobility obtained for the second band from the two-band model analysis unreliable. That is, care must be taken in interpreting these anomalies as evidences for temperature-driven Lifshitz transitions. Our skepticism on the existence of such phase transitions in ZrSiSe is further supported by the validation of the Kohler's rule for magnetoresistances at temperatures below 180 K. This work showcases potential issues in interpreting anomalies in the temperature dependence of the carrier density and mobility derived from the analysis of magnetoconductivities or magnetoresistivities using the conventional two-band model.

preprint2021arXiv

Direct visualization of polaron formation in the thermoelectric SnSe

SnSe is a layered material that currently holds the record for bulk thermoelectric efficiency. The primary determinant of this high efficiency is thought to be the anomalously low thermal conductivity resulting from strong anharmonic coupling within the phonon system. Here we show that the nature of the carrier system in SnSe is also determined by strong coupling to phonons by directly visualizing polaron formation in the material. We employ ultrafast electron diffraction and diffuse scattering to track the response of phonons in both momentum and time to the photodoping of free carriers across the bandgap, observing the bimodal and anisotropic lattice distortions that drive carrier localization. Relatively large (\SI{18.7}{\angstrom}), quasi-1D polarons are formed on the \SI{300}{\femto\second} timescale with smaller (\SI{4.2}{\angstrom}) 3D polarons taking an order of magnitude longer (\SI{4}{\pico\second}) to form. This difference appears to be a consequence of the profoundly anisotropic electron-phonon coupling in SnSe, with strong Fröhlich coupling only to zone center polar optical phonons. These results demonstrate that carriers in SnSe at optimal doping levels results in a high polaron density and that strong electron-phonon coupling is also critical to the thermoelectric performance of this benchmark material and potentially high-performance thermoelectrics more generally.

preprint2021arXiv

Giant Non-resonant Infrared Second Order Nonlinearity in $γ$-NaAsSe$_2$

Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down-conversion. Such crystals need to have high non-resonant NLO coefficients, a large bandgap, low absorption coefficient, phase-matchability among other competing demands, e.g., a larger bandgap leads to smaller NLO coefficients. Here, we report the successful growth of single crystals of $γ$-NaAsSe$_2$ that exhibit a giant second harmonic generation (SHG) susceptibility of d$_{11}$=590 pm V$^{-1}$ at 2$μ$m wavelength; this is ~ eighteen times larger than that of commercial AgGaSe$_2$ while retaining a similar bandgap of ~1.87eV, making it an outstanding candidate for quasi-phase-matched devices utilizing d$_{11}$. In addition, $γ$-NaAsSe$_2$ is both Type I and Type II phase-matchable, and has a transparency range up to 16$μ$m wavelength. Thus $γ$-NaAsSe2 is a promising bulk NLO crystal for infrared laser applications.

preprint2020arXiv

An integral method for the calculation of the reduction in interfacial free energy due to interfacial segregation

A method based on the Gibbs' adsorption isotherm is developed to calculate the decrease in interfacial free energy resulting from solute segregation at an internal interface, built on measured concentration profiles. Utilizing atom-probe tomography (APT), we first measure a concentration profile of the relative interfacial excess of solute atoms across an interface. To accomplish this we utilize a new method based on J. W. Cahn's formalism for the calculation of the Gibbs interfacial excess. We also introduce a method to calculate the decrease in interfacial free energy that is caused by the segregating solute atoms. This method yields a discrete profile of the decrease in interfacial free energies, which takes into account the measured concentration profile and calculated Gibbsian excess profile. We demonstrate that this method can be used for both homo- and hetero-phase interfaces and takes into account the actual distribution of solute atoms across an interface as determined by APT. It is applied to the case of the semiconducting system PbTe-PbS 12 mol.%-Na 1 mol.%, where Na segregation at the PbS/PbTe interface is anticipated to reduce the interfacial free energy of the {100} facets. We also consider the case of the nickel-based Alloy 600, where B and Si segregation are suspected to impede inter-granular stress corrosion cracking (IGSCC) at homo- (GB) and hetero-phase metal carbide (M7C3) interfaces. The concentration profiles associated with internal interfaces are measured by APT using an ultraviolet (wavelength = 355 nm) laser to dissect nanotips on an atom-by-atom and atomic plane-by-plane basis.

preprint2020arXiv

Dirac surface states in superconductors: a dual topological proximity effect

In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically protected surface states of the Bi$_2$Se$_3$ leak into the superconducting over-layer, suggesting a dual topological proximity effect. Coupling between theses states and the Nb states leads to an effective pairing mechanism for the surface states, leading to a modified model for a topological superconductor in these systems. This model is consistent with fits between the experimental data and the theory.

preprint2016arXiv

(CaO)(FeSe): A Layered Wide Gap Oxychalcogenide Semiconductor

A new iron-oxychalcogenide (CaO)(FeSe) was obtained which crystallizes in the orthorhombic space group Pnma (No. 62) with a = 5.9180(12) Å, b = 3.8802(8) Å, c = 13.193(3) Å. The unique structure of (CaO)(FeSe) is built up of a quasi-two-dimensional network of corrugated infinite layers of corner-shared FeSe2O2 tetrahedra that extend in the ab-plane. The corrugated layers composed of corner-shared FeSe2O2 tetrahedra stack along the c-axis with Ca2+ cations sandwiched between the layers. Optical spectroscopy and resistivity measurements reveal semiconducting behavior with an indirect optical band gap of around 1.8 eV and an activation energy of 0.19(1) eV. Electronic band structure calculations at the density function level predict a magnetic configuration as ground state and confirm the presence of an indirect wide gap in (CaO)(FeSe).

preprint2016arXiv

Enhanced Structural Stability and Photo Responsiveness of CH3NH3SnI3 Perovskite via Pressure-Induced Amorphization and Recrystallization

An organic-inorganic halide perovskite of CH3NH3SnI3 with significantly improved structural stability is obtained via pressure-induced amorphization and recrystallization. In situ high-pressure resistance measurements reveal an increased electrical conductivity by 300% in the pressure-treated perovskite. Photocurrent measurements also reveal a substantial enhancement in visible-light responsiveness. The mechanism underlying the enhanced properties is demonstrated to be associated with the improved structural stability.

preprint2016arXiv

La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor

The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and $β$ = 118.493(5)°. The structure of La0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5 infinitely long chains forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ~ 1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

preprint2015arXiv

Intrinsic femtosecond charge generation dynamics in a single crystal organometal halide perovskite

Hybrid metal-organic perovskite solar cells have astounded the solar cell community with their rapid rise in efficiency over the past three years. Despite this success, the basic processes governing the photogeneration of free charges, particularly their dynamics and efficiency, remain unknown. Here we use ultrabroadband pulses of THz frequency light to see the intrinsic photophysical properties of single crystal lead halide perovskite just femtoseconds after a photon is first absorbed. Our spectra reveal the dynamics and efficiencies of free charge creation, the remarkable ease in which they move through the lattice and the complicated interplay between free and bound charges in these materials.

preprint2015arXiv

Nanoscale $β$-Nuclear Magnetic Resonance Depth Imaging of Topological Insulators

Considerable evidence suggests that variations in the properties of topological insulators (TIs) at the nanoscale and at interfaces can strongly affect the physics of topological materials. Therefore, a detailed understanding of surface states and interface coupling is crucial to the search for and applications of new topological phases of matter. Currently, no methods can provide depth profiling near surfaces or at interfaces of topologically inequivalent materials. Such a method could advance the study of interactions. Herein we present a non-invasive depth-profiling technique based on $β$-NMR spectroscopy of radioactive $^8$Li$^+$ ions that can provide "one-dimensional imaging" in films of fixed thickness and generates nanoscale views of the electronic wavefunctions and magnetic order at topological surfaces and interfaces. By mapping the $^8$Li nuclear resonance near the surface and 10 nm deep into the bulk of pure and Cr-doped bismuth antimony telluride films, we provide signatures related to the TI properties and their topological non-trivial characteristics that affect the electron-nuclear hyperfine field, the metallic shift and magnetic order. These nanoscale variations in $β$-NMR parameters reflect the unconventional properties of the topological materials under study, and understanding the role of heterogeneities is expected to lead to the discovery of novel phenomena involving quantum materials.

preprint2015arXiv

Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator

In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$-type Pb$_{1-x}$Sn$_x$Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$Pb, $^{119}$Sn, and $^{125}$Te line shapes, spin-lattice relaxation rates, and Knight shifts provide site-specific characterization of the electronic band structure. This probe of the electronic band structure shows that the band inversion is unaffected by lattice distortions but related to spatial electronic inhomogeneities formed by Sn incorporation into the PbTe matrix. Strong relativistic effects are found to be responsible for the band inversion, regardless of carrier type and concentration, suggesting a novel interpretation of the band gap evolution with composition. The temperature dependences of the NMR parameters reveal a negative temperature coefficient of the direct gap for SnTe and positive coefficient for PbTe.

preprint2015arXiv

Tetragonal magnetic phase in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ from x-ray and neutron diffraction

Combined neutron and x-ray diffraction experiments demonstrate the formation of a low-temperature minority tetragonal phase in Ba$_{0.76}$K$_{0.24}$Fe$_2$As$_2$ in addition to the majority magnetic, orthorhombic phase. A coincident enhancement in the magnetic ($\frac{1}{2}$ $\frac{1}{2}$ 1) peaks shows that this minority phase is of the same type that was observed in Ba$_{1-x}$Na$_x$Fe$_2$As$_2$ ($0.24 \leq x \leq 0.28$), in which the magnetic moments reorient along the $c$-axis. This is evidence that the tetragonal magnetic phase is a universal feature of the hole-doped iron-based superconductors.

preprint2015arXiv

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi$_2$Te$_2$Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.

preprint2015arXiv

Understanding the role and interplay of heavy hole and light hole valence bands in the thermoelectric properties of PbSe

The thermoelectric properties of PbSe have significantly improved in recent years reaching figures of merit ZT 1.6. The transport properties of the hole doped high temperature thermoelectric material PbSe are particularly interesting and play a key role in this. Here they were analyzed over a wide temperature and hole concentration ranges. The special features observed in the variation of the experimental Seebeck coefficient, and Hall coefficient can be accounted for within the framework of a two band model. Two valence bands separated by a temperature dependent energy offset are considered. The extremum of the light hole band has a density of states mass 0.27mo at room temperature. It is non-parabolic and anisotropic and can be described by the Kane model. The extremum of the heavy hole band is isotropic and parabolic with a much larger density of states mass 2.5mo. We find that for heavily doped compositions the high mass band contributes the Seebeck coefficient even at room temperature. With rising temperature holes are transferred from the light hole to the heavy hole branch giving rise to the anomalous temperature dependent Hall coefficient which is found peaked near 650 K.

preprint2014arXiv

Coincident structural and magnetic order in BaFe$_2$(As$_{1-x}$)P$_x$)$_2$ revealed by high-resolution neutron diffraction

We present neutron diffraction analysis of BaFe$_2$(As$_{1-x}$P$_x$)$_2$ over a wide temperature (10 to 300 K) and compositional ($0.11 \leq x \leq 0.79$) range, including the normal state, the magnetically ordered state, and the superconducting state. The paramagnetic to spin-density wave and orthorhombic to tetragonal transitions are first order and coincident within the sensitivity of our measurements ($\sim 0.5$ K). Extrapolation of the orthorhombic order parameter down to zero suggests that structural quantum criticality cannot exist at compositions higher than $x = 0.28$, which is much lower than values determined using other methods, but in good agreement with our observations of the actual phase stability range. The onset of spin-density wave order shows a stronger structural anomaly than the charge-doped system in the form of an enhancement of the $c/a$ ratio below the transition.

preprint2013arXiv

Heat capacity jump at T_c and pressure derivatives of superconducting transition temperature in the Ba(1-x)NaxFe2As2 (0.1 <= x <= 0.9) series

We present the evolution of the initial (up to ~ 10 kbar) hydrostatic, pressure dependencies of T_c and of the ambient pressure jump in the heat capacity associated with the superconducting transition as a function of Na - doping in the Ba(1-x)NaxFe2As2 family of iron-based superconductors. For Na concentrations 0.15 <= x <= 0.9, the jump in specific heat at T_c, Delta C_p, follows the Delta C_p ~ T^3 scaling found for most BaFe2As2 - based superconductors. Pressure dependencies are non-monotonic for x = 0.2 and x = 0.24. For other Na concentrations T_c decreases under pressure in almost linear fashion. The anomalous behavior of the x = 0.2 and x = 0.24 samples under pressure are possibly due to the crossing of the phase boundaries of the narrow antiferromagnetic tetragonal phase, unique for the Ba(1-x)NaxFe2As2 series, with the application of pressure.

preprint2013arXiv

Heat capacity jump at Tc and pressure derivatives of superconducting transition temperature in the Ba1-xKxFe2As2 (0.2 < x < 1.0) series

We present the evolution of the initial (up to ~ 10 kbar) hydrostatic, pressure dependencies of Tc and of the ambient pressure jump in the heat capacity associated with the superconducting transition as a function of K - doping in the Ba1-xKxFe2As2 family of iron-based superconductors. The pressure derivatives show weak but distinct anomaly near x ~ 0.7. In the same concentration region Delta Cp at Tc deviates from the Delta Cp ~ T^3 scaling found for most BaFe2As2 - based superconductors. These results are consistent with a Lifshitz transition, and possible significant modification of the superconducting state, occurring near x ~ 0.7.

preprint2013arXiv

NMR Probe of Metallic States in Nanoscale Topological Insulators

A 125Te NMR study of bismuth telluride nanoparticles as function of particle size revealed that the spin-lattice relaxation is enhanced below 33 nm, accompanied by a transition of NMR spectra from single to bimodal regime. The satellite peak features a negative Knight shift and higher relaxivity, consistent with core polarization from p-band carriers. Whereas nanocrystals follow a Korringa law in the range 140-420K, micrometer particles do so only below 200K. The results reveal increased metallicity of these nanoscale topological insulators in the limit of higher surface-to-volume ratios.

preprint2013arXiv

Structural, Magnetic, and Superconducting Properties of Ba1-xNaxFe2As2

We report the results of a systematic investigation of the phase diagram of the iron-based superconductor system, Ba1-xNaxFe2As2, from x = 0.1 to x = 1.0 using high resolution neutron and x-ray diffraction and magnetization measurements. We find that the coincident structural and magnetic phase transition to an orthorhombic (O) structure with space group Fmmm and a striped antiferromagnet (AF) with space group F(C)mm'm' in Ba1-xNaxFe2As2 is of first order. A complete suppression of the magnetic phase is observed by x = 0.30, and bulk superconductivity occurs at a critical concentration near 0.15. We compare the new findings to the previously reported results of the hole-doped Ba1-xKxFe2As2 solid solution in order to resolve the differing effects of band filling and A-site cation size on the properties of the magnetic and superconducting ground states. The substantial size difference between Na and K causes various changes in the lattice trends, yet the overarching property phase diagram from the Ba1-xKxFe2As2 phase diagram carries over to the Ba1-xNaxFe2As2 solid solution. We note that the composition dependence of the c axis turns over from positive to negative around x = 0.35, unlike the K-substituted materials. We show that this can be understood by invoking steric effects; primarily the Fe2As2 layer shape is dictated mostly by the electronic filling, which secondarily induces an interlayer spacing adjusted to compensate for the given cation volume. This exemplifies the primacy of even subtle features in the Fe2As2 layer in controlling both the structure and properties in the uncollapsed 122 phases.

preprint2012arXiv

Antimony arsenide: Chemical ordering in the compound SbAs

The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show that the A7 structure can display chemical ordering of Sb and As, which were previously thought to mix randomly. Our structural characterization of the compound SbAs is performed by single-crystal and high-resolution synchrotron x-ray diffraction, and neutron and x-ray pair distribution function analysis. All least-squares refinements indicate ordering of Sb and As, resulting in a GeTe-type structure without inversion symmetry. High-temperature diffraction studies reveal an ordering transition around 550 K. Transport and infrared reflectivity measurements, along with first-principles calculations, confirm that SbAs is a semimetal, albeit with a direct band separation larger than that of Sb or As. Because even subtle substitutions in the semimetals, notably Bi_{1-x}Sb_x, can open semiconducting energy gaps, a further investigation of the interplay between chemical ordering and electronic structure on the A7 lattice is warranted.

preprint2012arXiv

Lattice dynamics reveals a local symmetry breaking in the emergent dipole phase of PbTe

Local symmetry breaking in complex materials is emerging as an important contributor to materials properties but is inherently difficult to study. Here we follow up an earlier structural observation of such a local symmetry broken phase in the technologically important compound PbTe with a study of the lattice dynamics using inelastic neutron scattering (INS). We show that the lattice dynamics are responsive to the local symmetry broken phase, giving key insights in the behavior of PbTe, but also revealing INS as a powerful tool for studying local structure. The new result is the observation of the unexpected appearance on warming of a new zone center phonon branch in PbTe. In a harmonic solid the number of phonon branches is strictly determined by the contents and symmetry of the unit cell. The appearance of the new mode indicates a crossover to a dynamic lower symmetry structure with increasing temperature. No structural transition is seen crystallographically but the appearance of the new mode in inelastic neutron scattering coincides with the observation of local Pb off-centering dipoles observed in the local structure. The observation resembles relaxor ferroelectricity but since there are no inhomogeneous dopants in pure PbTe this anomalous behavior is an intrinsic response of the system. We call such an appearance of dipoles out of a non-dipolar ground-state "emphanisis" meaning the appearance out of nothing. It cannot be explained within the framework of conventional phase transition theories such as soft-mode theory and challenges our basic understanding of the physics of materials.

preprint2012arXiv

Phase Diagram of Ba1-xKxFe2As2

We report the results of a systematic investigation of the phase diagram of the iron-based superconductor, Ba1-xKxFe2As2, from x = 0 to x = 1.0 using high resolution neutron and x-ray diffraction and magnetization measurements. The polycrystalline samples were prepared with an estimated compositional variation of \Deltax <~ 0.01, allowing a more precise estimate of the phase boundaries than reported so far. At room temperature, Ba1-xKxFe2As2 crystallizes in a tetragonal structure with the space group symmetry of I4/mmm, but at low doping, the samples undergo a coincident first-order structural and magnetic phase transition to an orthorhombic (O) structure with space group Fmmm and a striped antiferromagnet (AF) with space group Fcmm'm'. The transition temperature falls from a maximum of 139K in the undoped compound to 0K at x = 0.252, with a critical exponent as a function of doping of 0.25(2) and 0.12(1) for the structural and magnetic order parameters, respectively. The onset of superconductivity occurs at a critical concentration of x = 0.130(3) and the superconducting transition temperature grows linearly with x until it crosses the AF/O phase boundary. Below this concentration, there is microscopic phase coexistence of the AF/O and superconducting order parameters, although a slight suppression of the AF/O order is evidence that the phases are competing. At higher doping, superconductivity has a maximum Tc of 38 K at x = 0.4 falling to 3 K at x = 1.0. We discuss reasons for the suppression of the spin-density-wave order and the electron-hole asymmetry in the phase diagram.

preprint2012arXiv

Phase relations in K_xFe_{2-y}Se_2 and the structure of superconducting K_xFe_2Se_2 via high-resolution synchrotron diffraction

Superconductivity in iron selenides has experienced a rapid growth, but not without major inconsistencies in the reported properties. For alkali-intercalated iron selenides, even the structure of the superconducting phase is a subject of debate, in part because the onset of superconductivity is affected much more delicately by stoichiometry and preparation than in cuprate or pnictide superconductors. If high-quality, pure, superconducting intercalated iron selenides are ever to be made, the intertwined physics and chemistry must be explained by systematic studies of how these materials form and by and identifying the many coexisting phases. To that end, we prepared pure K_2Fe_4Se_5 powder and superconductors in the K_xFe_{2-y}Se_2 system, and examined differences in their structures by high-resolution synchrotron and single-crystal x-ray diffraction. We found four distinct phases: semiconducting K_2Fe_4Se_5, a metallic superconducting phase K_xFe_2Se_2 with x ranging from 0.38 to 0.58, an insulator KFe_{1.6}Se_2 with no vacancy ordering, and an oxidized phase K_{0.51(5)}Fe_{0.70(2)}Se that forms the PbClF structure upon exposure to moisture. We find that the vacancy-ordered phase K_2Fe_4Se_5 does not become superconducting by doping, but the distinct iron-rich minority phase K_xFe_2Se_2 precipitates from single crystals upon cooling from above the vacancy ordering temperature. This coexistence of metallic and semiconducting phases explains a broad maximum in resistivity around 100 K. Further studies to understand the solubility of excess Fe in the K_xFe_{2-y}Se_2 structure will shed light on the maximum fraction of superconducting K_xFe_2Se_2 that can be obtained by solid state synthesis.

preprint2012arXiv

Quantitative nanostructure characterization using atomic pair distribution functions obtained from laboratory electron microscopes

Quantitatively reliable atomic pair distribution functions (PDFs) have been obtained from nanomaterials in a straightforward way from a standard laboratory transmission electron microscope (TEM). The approach looks very promising for making electron-derived PDFs (ePDFs) a routine step in the characterization of nanomaterials because of the ubiquity of such TEMs in chemistry and materials laboratories. No special attachments such as energy filters were required on the microscope. The methodology for obtaining the ePDFs is described as well as some opportunities and limitations of the method.

preprint2012arXiv

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bulk-like states with small amplitudes at the surface. The topological surface states coexist with bulk-like states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulk-like surface states.

preprint2011arXiv

High temperature charge and thermal transport properties of the n-type thermoelectric material PbSe

We present a detailed study of the charge transport, optical reflectivity, and thermal transport properties of n-type PbSe crystals. A strong scattering, mobility-limiting mechanism was revealed to be at play at temperatures above 500 K. The mechanism is indicative of complex electron-phonon interactions that cannot be explained by conventional acoustical phonon scattering alone. We applied the first order non-parabolicity approximation to extract the density of states effective mass as a function of doping both at room temperature and at 700 K. The results are compared to those of a parabolic band model and in the light of doping dependent studies of the infrared optical reflectivity. The thermal conductivity behavior as a function of temperature shows strong deviation from the expected Debye-Peierls high temperature behavior (umklapp dominated) indicating an additional heat carrying channel, which we associate with optical phonon excitations. The correlation of the thermal conductivity observations to the high temperature carrier mobility behavior is discussed. The thermoelectric figure of merit exhibits a promising value of ~0.8 at 700K at 1.5 x 10^{19}$ cm^-3.

preprint2011arXiv

Magnetoelastic Coupling in the Phase Diagram of Ba1-xKxFe2As2

We report a high resolution neutron diffraction investigation of the coupling of structural and magnetic transitions in Ba1xKxFe2As2. The tetragonal-orthorhombic and antiferromagnetic transitions are suppressed with potassium-doping, falling to zero at x <~ 0.3. However, unlike Ba(Fe1xCox)2As2, the two transitions are first-order and coincident over the entire phase diagram, with a biquadratic coupling of the two order parameters. The phase diagram is refined showing that the onset of superconductivity is at x = 0.133 with all three phases coexisting until x >~ 0.24.

preprint2010arXiv

Impurity clustering and impurity-induced bands in PbTe-, SnTe-, and GeTe-based bulk thermoelectrics

Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great interest for infrared devices and high-temperature thermoelectric applications. A deeper understanding of the atomic and electronic structure of these materials is crucial for explaining, predicting, and optimizing their properties, and to suggest new materials for better performance. In this work, we present our first-principles studies of the energy bands associated with various monovalent (Na, K, and Ag) and trivalent (Sb and Bi) impurities and impurity clusters in PbTe, SnTe, and GeTe using supercell models. We find that monovalent and trivalent impurity atoms tend to come close to one another and form impurity-rich clusters, and the electronic structure of the host materials is strongly perturbed by the impurities. There are impurity-induced bands associated with the trivalent impurities that split off from the conduction-band bottom with large shifts towards the valence-band top. This is due to the interaction between the $p$ states of the trivalent impurity cation and the divalent anion which tends to drive the systems towards metallicity. The introduction of monovalent impurities (in the presence of trivalent impurities) significantly reduces (in PbTe and GeTe) or slightly enhances (in SnTe) the effect of the trivalent impurities. One, therefore, can tailor the band gap and band structure near the band gap (hence transport properties) by choosing the type of impurity and its concentration or tuning the monovalent/trivalent ratio. Based on the calculated band structures, we are able to explain qualitatively the measured transport properties of the whole class of PbTe-, SnTe-, and GeTe-based bulk thermoelectrics.

preprint2010arXiv

New Candidates for Topological Insulators : Pb-based chalcogenide series

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb$_2$Sb$_2$Te$_5$.