Paper detail

Exploring nonequilibrium phases of photo-doped Mott insulators with Generalized Gibbs ensembles

Photo-excited strongly correlated systems can exhibit intriguing non-thermal phases, but the theoretical investigation of them poses significant challenges. In this work, we introduce a generalized Gibbs ensemble type description for long-lived photo-doped states in Mott insulators. This framework enables systematic studies of photo-induced phases based on equilibrium methods, as demonstrated here for the one-dimensional extended Hubbard model. We determine the nonequilibrium phase diagram, which features $η$-pairing and charge density wave phases in a wide doping range, and reveal physical properties of these phases. We show that the peculiar kinematics of photo-doped carriers, and the interaction between them, play an essential role in the formation of the non-thermal phases, and we clarify the differences between photo-doped Mott insulators, chemically-doped Mott insulators and photo-doped semiconductors. Our results demonstrate a new path for the systematic exploration of nonequilibrium strongly correlated systems and show that photo-doped Mott insulators host different phases than conventional semiconductors.