Abstract
Electron spectrometry is traditionally challenging due to the difficulty of correctly reconstructing the original energy of the detected electrons. Silicon Drift Detectors, extensively used for X-ray spectrometry, are a promising technology for the precise measurement of electrons energy. The ability to correctly model the detector entrance window response to the energy deposited by electrons is a critical aspect of this application. We hereby describe a MonteCarlo-based approach to this problem, together with characterization and validation measurements performed with electron beams from a Scanning Electron Microscope.
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