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Marco Carminati

Marco Carminati appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.ins-detphysics.opticsnucl-ex

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Published work

6 published item(s)

preprint2020arXiv

Characterization of a Silicon Drift Detector for High-Resolution Electron Spectroscopy

Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN (TRitium Investigation on STerile to Active Neutrino mixing) project. This work presents the characterization of a single-pixel SDD detector with a mono-energetic electron beam obtained from a Scanning Electron Microscope. The suitability of the SDD to detect electrons, in the energy range spanning from few keV to tens of keV, is demonstrated. Experimental measurements reveal a strong effect of the detector's entrance window structure on the observed energy response. A detailed detector model is therefore necessary to reconstruct the spectrum of an unknown beta-decay source.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron spectrometry with SDDs: a GEANT4 based method for detector response reconstruction

Electron spectrometry is traditionally challenging due to the difficulty of correctly reconstructing the original energy of the detected electrons. Silicon Drift Detectors, extensively used for X-ray spectrometry, are a promising technology for the precise measurement of electrons energy. The ability to correctly model the detector entrance window response to the energy deposited by electrons is a critical aspect of this application. We hereby describe a MonteCarlo-based approach to this problem, together with characterization and validation measurements performed with electron beams from a Scanning Electron Microscope.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hunting keV sterile neutrinos with KATRIN: building the first TRISTAN module

The KATRIN (Karlsruhe Tritium Neutrino) experiment investigates the energetic endpoint of the tritium beta-decay spectrum to determine the effective mass of the electron anti-neutrino. The collaboration has reported a first mass measurement result at this TAUP-2019 conference. The TRISTAN project aims at detecting a keV-sterile neutrino signature by measuring the entire tritium beta-decay spectrum with an upgraded KATRIN system. One of the greatest challenges is to handle the high signal rates generated by the strong activity of the KATRIN tritium source while maintaining a good energy resolution. Therefore, a novel multi-pixel silicon drift detector and read-out system are being designed to handle rates of about 100 Mcps with an energy resolution better than 300 eV (FWHM). This report presents succinctly the KATRIN experiment, the TRISTAN project, then the results of the first 7-pixels prototype measurement campaign and finally describes the construction of the first TRISTAN module composed of 166 SDD-pixels as well as its implementation in KATRIN experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

ContactLess Integrated Photonic Probe for light monitoring in InP-based devices

The increasing complexity of photonic integrated circuits requires the possibility to monitor the state of the circuit in order to stabilize the working point against environmental fluctuations or to perform reliable reconfiguration procedures. Although InP technologies can naturally integrate high-quality photodiodes, their use as tap monitors necessarily affects the circuit response and is restricted to few units per chip. They are hence unsuited for very large circuits, where transparent power monitors become key components. In this paper we present the implementation of a ContactLess Integrated Photonic Probe (CLIPP) realizing a non invasive integrated light monitor on InP-based devices. We describe an innovative vertical scheme of the CLIPP monitor which exploits the back side of the chip as a common electrode, thus enabling a reduction of the device footprint and a simplification of the electrical connectivity. We characterize the response of the CLIPP and demonstrate its functionality as power monitor. Lastly, we provide a direct demonstration that CLIPP monitor allows to access more accurate information on the working point of photonic integrated circuits compared to conventional external or integrated photodetectors.

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preprint2014arXiv

Non-invasive monitoring and control in silicon photonics by CMOS integrated electronics

As photonics breaks away from today's device level toward large scale of integration and complex systems-on-a-chip, concepts like monitoring, control and stabilization of photonic integrated circuits emerge as new paradigms. Here, we show non-invasive monitoring and feedback control of high quality factor silicon photonics resonators assisted by a transparent light detector directly integrated inside the cavity. Control operations are entirely managed by a CMOS microelectronic circuit, hosting many parallel electronic read-out channels, that is bridged to the silicon photonics chip. Advanced functionalities, such as wavelength tuning, locking, labeling and swapping are demonstrated. The non-invasive nature of the transparent monitor and the scalability of the CMOS read-out system offer a viable solution for the control of arbitrarily reconfigurable photonic integrated circuits aggregating many components on a single chip.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-invasive light observer

Photonic technologies lack non-invasive monitoring tools to inspect the light inside optical waveguides. This is one of the main barriers to large scale of integration, even though photonic platforms are potentially ready to host several thousands of elements on a single chip. Here, we demonstrate non-invasive light observation in silicon photonics devices by exploiting photon interaction with intra-gap energy states localized at the waveguide surface. Light intensity is measured through a ContactLess Integrated Photonic Probe (CLIPP) that introduces no measurable extra-photon absorption and a phase perturbation as low as 0.2 mrad, comparable to thermal fluctuations of less than 3 mK. Multipoint light monitoring is demonstrated with a sensitivity of -30 dBm and a dynamic range of 40 dB. CLIPP technology is simple, inherently CMOS compatible, and scalable to hundreds of probing points per chip. This concept provides a viable way to real-time conditioning and feedback control of densely-integrated photonic systems.

0 citations0 reviewsNo code linkedOpen access