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Hiromitsu Kato

Hiromitsu Kato appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci quant-ph cond-mat.mes-hall physics.app-ph physics.optics

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preprint2024arXiv

Coherent Electric-Field Control of Orbital state in a Neutral Nitrogen-Vacancy Center

The coherent control of the orbital state is crucial for color centers in diamonds for realizing extremely low-power manipulation. Here, we propose the neutrally charged nitrogen-vacancy center, NV$^0$, as an ideal system for orbital control through electric fields. We estimate electric susceptibility in the ground state of NV$^0$ to be comparable to that in the excited state of NV$^-$. Also, we demonstrate coherent control of the orbital states of NV$^0$. The required power for orbital control is three orders of magnitude smaller than that for spin control, highlighting the potential for interfacing a superconducting qubit operated in a dilution refrigerator.

preprint2024arXiv

Quantum Orbital-State Control of a Neutral Nitrogen-Vacancy Center at Millikelvin Temperatures

A neutral nitrogen-vacancy center (NV$^0$) is promising for realizing strong coupling with a single microwave photon due to its large electric field sensitivity, although it is susceptible to environmental phonon noise at 5 K. Decreasing the temperature to 15 mK results in a tenfold increase in orbital relaxation time compared to that at 5 K. Dynamical decoupling pulses significantly increase the orbital coherence time to around 1.8 $μ$s, representing a 30-fold improvement compared to that without decoupling pulses. Based on these results, a single NV$^0$ can reach the strong coupling regime when coupled with a high-impedance microwave resonator, thus opening up the possibility of microwave quantum electrodynamics using a single optically-active defect center in diamond.

preprint2015arXiv

Electrical excitation of silicon-vacancy centers in single crystal diamond

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

preprint2014arXiv

Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond

Nitrogen-vacancy (NV) centers in diamond have attracted a great deal of attention because of their possible use in information processing and electromagnetic sensing technologies. We examined theatomistic generation mechanism for the NV defect aligned in the [111] direction of C(111) substrates. We found that N is incorporated in the C bilayers during the lateral growth arising from a sequence of kink propagation along the step edge down to [-1,-1,2]. As a result, the atomic configuration with the N-atom lone-pair pointing in the [111] direction is formed, which causes preferential alignment of NVs. Our model is consistent with recent experimental data for perfect NV alignment in C(111) substrates.