Abstract

The investigation of two-level-state (TLS) loss in dielectric materials and interfaces remains at the forefront of materials research in superconducting quantum circuits. We demonstrate a method of TLS loss extraction of a thin film dielectric by measuring a lumped element resonator fabricated from a superconductor-dielectric-superconductor trilayer. We extract the dielectric loss by formulating a circuit model for a lumped element resonator with TLS loss and then fitting to this model using measurements from a set of three resonator designs: a coplanar waveguide resonator, a lumped element resonator with an interdigitated capacitor, and a lumped element resonator with a parallel plate capacitor that includes the dielectric thin film of interest. Unlike other methods, this allows accurate measurement of materials with TLS loss lower than 10−610^{-6}. We demonstrate this method by extracting a TLS loss of 1.02×10−31.02 \times 10^{-3} for sputtered Al2O3\mathrm{Al_2O_3} using a set of samples fabricated from an Al/Al2O3/Al\mathrm{Al/Al_2O_3/Al} trilayer. We observe a difference of 11%\% between extracted loss of the trilayer with and without the implementation of this method.

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