Researcher profile

C. R. H. McRae

C. R. H. McRae contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Cryogenic single-port calibration for superconducting microwave resonator measurements

Superconducting circuit testing and materials loss characterization requires robust and reliable methods for the extraction of internal and coupling quality factors of microwave resonators. A common method, imposed by limitations on the device design or experimental configuration, is the single-port reflection geometry, i.e. reflection-mode. However, impedance mismatches in cryogenic systems must be accounted for through calibration of the measurement chain while it is at low temperatures. In this paper, we demonstrate a data-based, single-port calibration using commercial microwave standards and a vector network analyzer (VNA) with samples at millikelvin temperature in a dilution refrigerator, making this method useful for measurements of quantum phenomena. Finally, we cross reference our data-based, single-port calibration and reflection measurement with over-coupled 2D- and 3D-resonators against well established two-port techniques corroborating the validity of our method.

preprint2020arXiv

Dielectric loss extraction for superconducting microwave resonators

The investigation of two-level-state (TLS) loss in dielectric materials and interfaces remains at the forefront of materials research in superconducting quantum circuits. We demonstrate a method of TLS loss extraction of a thin film dielectric by measuring a lumped element resonator fabricated from a superconductor-dielectric-superconductor trilayer. We extract the dielectric loss by formulating a circuit model for a lumped element resonator with TLS loss and then fitting to this model using measurements from a set of three resonator designs: a coplanar waveguide resonator, a lumped element resonator with an interdigitated capacitor, and a lumped element resonator with a parallel plate capacitor that includes the dielectric thin film of interest. Unlike other methods, this allows accurate measurement of materials with TLS loss lower than $10^{-6}$. We demonstrate this method by extracting a TLS loss of $1.02 \times 10^{-3}$ for sputtered $\mathrm{Al_2O_3}$ using a set of samples fabricated from an $\mathrm{Al/Al_2O_3/Al}$ trilayer. We observe a difference of 11$\%$ between extracted loss of the trilayer with and without the implementation of this method.