Abstract

We have observed a metal-insulator transition of a quasi-two dimensional electronic system in transition metal dichalcogenide 2H2H-TaSe2_2 caused by doping iron. The sheet resistance of 2H2H-Fex_xTaSe2_2 (0≤x≤0.1200 \leq x \leq 0.120) single crystals rises about 10610^6 times with the increasing of xx at the lowest temperature. We investigated the temperature dependence of the resistance and found a metal-insulator transition with a critical sheet resistance 11.7±5.411.7 \pm 5.4 kΩ\rmΩ. The critical exponent of the localization length νν is estimated 0.31±0.180.31 \pm 0.18. The values of the critical sheet resistance and νν are accordant to those of the \textit{chiral unitary class} (less than h/1.49e2=17.3h/1.49e^2=17.3 kΩ\rmΩ and 0.35±0.030.35 \pm 0.03, respectively). We suggest that 2H2H-Fex_xTaSe2_2 is classified as the chiral unitary class, not as standard unitary class.

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