24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene

We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $λ_s$ up to 13~\textmu m at room temperature with relaxation times $τ_s$ of 2.5~ns. At 4~K, the diffusion coefficient rises up to 0.52~m$^2$/s, a value 5 times higher than the best achieved for graphene spin valves up to date. As a consequence, $λ_s$ rises up to 24~\textmu m with $τ_s$ as high as 2.9~ns. We characterized 3 different samples and observed that the spin relaxation times increase with the device length. We explain our results using a model that accounts for the spin relaxation induced by the non-encapsulated outer regions.

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