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Bart J. van Wees

Bart J. van Wees appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

22 published item(s)

preprint2022arXiv

Towards fully two-dimensional spintronic devices

Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, CrSBr. We clearly demonstrate that the usage of the conventional 3D magnetic contacts, that are commonly air-sensitive and incompatible with practical technologies, can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Detecting chirality in two-terminal electronic devices

Central to spintronics is the interconversion between electronic charge and spin currents, and this can arise from the chirality-induced spin selectivity (CISS) effect. CISS is often studied as magnetoresistance (MR) in two-terminal (2T) electronic devices containing a chiral (molecular) component and a ferromagnet. However, fundamental understanding of when and how this MR can occur is lacking. Here, we uncover an elementary mechanism that generates such a MR for nonlinear response. It requires energy-dependent transport and energy relaxation within the device. The sign of the MR depends on chirality, charge carrier type, and bias direction. Additionally, we reveal how CISS can be detected in the linear response regime in magnet-free 2T devices, either by forming a chirality-based spin-valve using two or more chiral components, or by Hanle spin precession in devices with a single chiral component. Our results provide operation principles and design guidelines for chirality-based spintronic devices and technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Non-local spin Seebeck effect in the bulk easy-plane antiferromagnet NiO

We report the observation of magnon spin currents generated by the Spin Seebeck effect (SSE) in a bulk single crystal of the easy-plane antiferromagnet NiO. A magnetic field induces a non-degeneracy and thereby an imbalance in the population of magnon modes with opposite spin. A temperature gradient then gives rise to a non-zero magnon spin current. This SSE is measured both in a local and a non-local geometry at 5$\,$K in bulk NiO. The magnetic field dependence of the obtained signal is modelled by magnetic field splitting of the low energy magnon modes, affecting the spin Seebeck coefficient. The relevant magnon modes at this temperature are linked to cubic anisotropy and magnetic dipole-dipole interactions. The non-local signal deviates from the expected quadratic Joule heating by saturating at a current from around 75$\,μA$ in the injector. The magnon chemical potential does not decay exponentially with distance and inhomogeneities may be the result of local magnon accumulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reply to "Comment on 'Spin-dependent electron transmission model for chiral molecules in mesoscopic devices'"

Here we emphasize once more the distinction between generating CISS (spin-charge current conversion) in a chiral system and detecting it as magnetoresistance in two-terminal electronic devices. We also highlight important differences between electrical measurement results obtained in the linear response regime and those obtained in the nonlinear regime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin caloritronics in a CrBr$_3$-based magnetic van der Waals heterostructure

The recently reported magnetic ordering in insulating two-dimensional (2D) materials, such as chromium triiodide (CrI$_3$) and chromium tribromide (CrBr$_3$), opens new possibilities for the fabrication of magneto-electronic devices based on 2D systems. Inevitably, the magnetization and spin dynamics in 2D magnets are strongly linked to Joule heating. Therefore, understanding the coupling between spin, charge and heat, i.e. spin caloritronic effects, is crucial. However, spin caloritronics in 2D ferromagnets remains mostly unexplored, due to their instability in air. Here we develop a fabrication method that integrates spin-active contacts with 2D magnets through hBN encapsulation, allowing us to explore the spin caloritronic effects in these materials. The angular dependence of the thermal spin signal of the CrBr$_3$/Pt system is studied, for different conditions of magnetic field and heating current. We highlight the presence of a significant magnetic proximity effect from CrBr$_3$ on Pt revealed by an anomalous Nernst effect in Pt, and suggest the contribution of the spin Seebeck effect from CrBr$_3$. These results pave the way for future magnonic devices using air-sensitive 2D magnetic insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

98% directional guiding of spin currents with 90 micrometer relaxation length in bilayer graphene using carrier drift

Electrical control of spin signals and long distance spin transport are major requirements in the field of spin electronics. Here we report the efficient guiding of spin currents at room temperature in high mobility hexagonal boron nitride encapsulated bilayer graphene using carrier drift. Our experiments, together with modelling, show that the spin relaxation length can be tuned from 2 to 88 micrometers when applying a DC current of $\mp$40 uA respectively. Our model predicts that, extending the range up to $\mathrm{I_{dc}}=\mp$150 uA, the spin relaxation length can be tuned from 0.6 to 320 um respectively, indicating that spin relaxation lengths in the millimeter range are within scope in near future with moderate current densities. Our results also show that we are able to direct spin currents on either side of a spin injection contact. 98% of the injected spins flow to the left when $\mathrm{I_{dc}}$= -40 uA and 65% flow to the right when the drift current is reversed. Our model shows that, for $\mathrm{I_{dc}}=\mp$150 uA the numbers reach 99.8% and 95% respectively showing the potential of carrier drift for spin-based logic operations and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Detection of spin pumping from YIG by spin-charge conversion in a Au/Ni$_{80}$Fe$_{20}$ spin-valve structure

Many experiments have shown the detection of spin-currents driven by radio-frequency spin pumping from yttrium iron garnet (YIG), by making use of the inverse spin-Hall effect, which is present in materials with strong spin-orbit coupling, such as Pt. Here we show that it is also possible to directly detect the resonance-driven spin-current using Au/permalloy (Py, Ni$_{80}$Fe$_{20}$) devices, where Py is used as a detector for the spins pumped across the YIG/Au interface. This detection mechanism is equivalent to the spin-current detection in metallic non-local spin-valve devices. By finite element modeling we compare the pumped spin-current from a reference Pt strip with the detected signals from the Au/Py devices. We find that for one series of Au/Py devices the calculated spin pumping signals mostly match the measurements, within 20%, whereas for a second series of devices additional signals are present which are up to a factor 10 higher than the calculated signals from spin pumping. We also identify contributions from thermoelectric effects caused by the resonant (spin-related) and non-resonant heating of the YIG. Thermocouples are used to investigate the presence of these thermal effects and to quantify the magnitude of the Spin-(dependent-)Seebeck effect. Several additional features are observed, which are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Influence of yttrium iron garnet thickness and heater opacity on the nonlocal transport of electrically and thermally excited magnons

We studied the nonlocal transport behavior of both electrically and thermally excited magnons in yttrium iron garnet (YIG) as a function of its thickness. For electrically injected magnons, the nonlocal signals decrease monotonically as the YIG thickness increases. For the nonlocal behavior of the thermally generated magnons, or the nonlocal spin Seebeck effect (SSE), we observed a sign reversal which occurs at a certain heater-detector distance, and it is influenced by both the opacity of the YIG/heater interface and the YIG thickness. Our nonlocal SSE results can be qualitatively explained by the bulk-driven SSE mechanism together with the magnon diffusion model. Using a two-dimensional finite element model (2D-FEM), we estimated the bulk spin Seebeck coefficient of YIG at room temperature. The quantitative disagreement between the experimental and modeled results indicates more complex processes going on in addition to magnon diffusion and relaxation, especially close to the contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Magnon spin transport driven by the magnon chemical potential in a magnetic insulator

We develop a linear-response transport theory of diffusive spin and heat transport by magnons in magnetic insulators with metallic contacts. The magnons are described by a position dependent temperature and chemical potential that are governed by diffusion equations with characteristic relaxation lengths. Proceeding from a linearized Boltzmann equation, we derive expressions for length scales and transport coefficients. For yttrium iron garnet (YIG) at room temperature we find that long-range transport is dominated by the magnon chemical potential. We compare the model's results with recent experiments on YIG with Pt contacts [L.J. Cornelissen, et al., Nat. Phys. 11, 1022 (2015)] and extract a magnon spin conductivity of $σ_{m}=5\times10^{5}$ S/m. Our results for the spin Seebeck coefficient in YIG agree with published experiments. We conclude that the magnon chemical potential is an essential ingredient for energy and spin transport in magnetic insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature dependence of the magnon spin diffusion length and magnon spin conductivity in the magnetic insulator yttrium iron garnet

We present a systematic study of the temperature dependence of diffusive magnon spin transport, using a non-local device geometry. In our measurements, we detect spin signals arising from electrical and thermal magnon generation, and we directly extract the magnon spin diffusion length $λ_m$ for temperatures from 2 to 293 K. Values of $λ_m$ obtained from electrical and thermal generation agree within the experimental error, with $λ_m=9.6\pm0.9$ $μ$m at room temperature to a minimum of $λ_m=5.5\pm0.7$ $μ$m at 30 K. Using a 2D finite element model to fit the data obtained for electrical magnon generation we extract the magnon spin conductivity $σ_m$ as a function of temperature, which is reduced from $σ_m=5.1\pm0.2\times10^5$ S/m at room temperature to $σ_m=0.7\pm0.4\times10^5$ S/m at 5 K. Finally, we observe an enhancement of the signal originating from thermally generated magnons for low temperatures, where a maximum is observed around $T=7$ K. An explanation for this low temperature enhancement is however still missing and requires additional investigations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene

We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $λ_s$ up to 13~\textmu m at room temperature with relaxation times $τ_s$ of 2.5~ns. At 4~K, the diffusion coefficient rises up to 0.52~m$^2$/s, a value 5 times higher than the best achieved for graphene spin valves up to date. As a consequence, $λ_s$ rises up to 24~\textmu m with $τ_s$ as high as 2.9~ns. We characterized 3 different samples and observed that the spin relaxation times increase with the device length. We explain our results using a model that accounts for the spin relaxation induced by the non-encapsulated outer regions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sign of inverse spin Hall voltages generated by ferromagnetic resonance and temperature gradients in yttrium iron garnet|platinum bilayers

We carried out a concerted effort to determine the absolute sign of the inverse spin Hall effect voltage generated by spin currents injected into a normal metal. We focus on yttrium iron garnet (YIG)|platinum bilayers at room temperature, generating spin currents by microwaves and temperature gradients. We find consistent results for different samples and measurement setups that agree with theory. We suggest a right-hand-rule to define a positive spin Hall angle corresponding to with the voltage expected for the simple case of scattering of free electrons from repulsive Coulomb charges.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films

We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts = 28 K) and the spin lock-in transitions (T_{lock_in} = 14 K). The SMR and SSE response in the spin lock-in phase are one order of magnitude larger than those observed at the ferrimagnetic transition temperature (Tc = 94 K), which indicates that the interaction between spins at the Pt|CCO interface is more efficient in the non-collinear magnetic state below Ts and T_{lock-in}. At T > Tc, magnetic field-induced SMR and SSE signals are observed, which can be explained by a high interface susceptibility. Our results show that the spin transport at the Pt|CCO interface is sensitive to the magnetic phases but cannot be explained solely by the bulk magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Surface sensitivity of the spin Seebeck effect

We have investigated the influence of the interface quality on the spin Seebeck effect (SSE) of the bilayer system yttrium iron garnet (YIG) - platinum (Pt). The magnitude and shape of the SSE is strongly influenced by mechanical treatment of the YIG single crystal surface. We observe that the saturation magnetic field H_{sat} for the SSE signal increases from 55.3 mT to 72.8 mT with mechanical treatment. The change in the magnitude of H_{sat} can be attributed to the presence of a perpendicular magnetic anisotropy due to the treatment induced surface strain or shape anisotropy in the Pt/YIG system. Our results show that the SSE is a powerful tool to investigate magnetic anisotropy at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Platinum thickness dependence of the inverse spin-Hall voltage from spin pumping in a hybrid YIG/Pt system

We show the first experimental observation of the platinum (Pt) thickness dependence in a hybrid YIG/Pt system of the inverse spin-Hall effect from spin pumping, over a large frequency range and for different rf powers. From the measurement of the dc voltage ($Δ\textrm{V}$) at the resonant condition and the resistance ($R$) of the Pt layer, a strong enhancement of the ratio $Δ\textrm{V}/R$ has been observed, which is not in agreement with previous studies on the NiFe/Pt system. The origin of this behaviour is still unclear and cannot be explained by the spin transport model that we have used.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Reversible hydrogenation and band gap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy

The effect of hydrogenation on the topography and the electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using Ar/H2 plasma. Analyzing thousands of scanning tunneling spectroscopy measurements we determine that the hydrogen chemisorption on the surface of graphite/graphene opens on average an energy band gap of 0.4 eV around the Fermi level. We find that although the plasma treatment modifies the surface topography in a non-reversible way, the change in the electronic properties can be reversed by a moderate thermal annealing and the samples can be hydrogenated again yielding a similar, but slightly reduced, semiconducting behavior after the second hydrogenation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene

We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin defect-free insulating substrates, dielectric barriers or planar electron tunneling junctions. Additionally, we show that few-layer graphene flakes can be deposited on top of a previously transferred mica flake. Our transfer method relies on viscoelastic stamps, as those used for soft lithography. A Raman spectroscopy study shows that such an all-dry deposition technique yields cleaner and higher quality flakes than conventional wet-transfer procedures based on lithographic resists.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Charge transport in a single superconducting tin nanowire encapsulated in a multiwalled carbon nanotube

The charge transport properties of single superconducting tin nanowires, encapsulated by multiwalled carbon nanotubes have been investigated by multi-probe measurements. The multiwalled carbon nanotube protects the tin nanowire from oxidation and shape fragmentation and therefore allows us to investigate the electronic properties of stable wires with diameters as small as 25 nm. The transparency of the contact between the Ti/Au electrode and nanowire can be tuned by argonion etching the multiwalled nanotube. Application of a large electrical current results in local heating at the contact which in turn suppresses superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantized conductance of a suspended graphene nanoconstriction

A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental verification and/or discovery of many new quantum mechanical effects in this field. Examples are effects due to specific graphene edges, such as spin polarization at zigzag edges of a graphene nanoribbon and the use of the valley degree of freedom in the field of graphene valleytronics8. As a first step in this direction we present the observation of quantized conductance at integer multiples of 2e^2/h at zero magnetic field and 4.2 K temperature in a high mobility suspended graphene ballistic nanoconstriction. This quantization evolves into the typical quantum Hall effect for graphene at magnetic fields above 60mT. Voltage bias spectroscopy reveals an energy spacing of 8 meV between the first two subbands. A pronounced feature at 0.6 2e^2/h present at a magnetic field as low as ~0.2T resembles the "0.7 anomaly" observed in quantum point contacts in a GaAs-AlGaAs two dimensional electron gas, having a possible origin in electron-electron interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FET in moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FET on a regular SiO2 substrate exhibits behavior that corresponds to electrochemically induced hysteresis in ambient conditions, and can be caused by charge trapping mechanism associated with sensitivity of graphene to the local pH.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Electronic spin transport and spin precession in single graphene layers at room temperature

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport also supercurrent transport has already been observed. It has also been suggested that graphene might be a promising material for spintronics and related applications, such as the realization of spin qubits, due to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. As a first step in the direction of graphene spintronics and spin qubits we report the observation of spin transport, as well as Larmor spin precession over micrometer long distances using single graphene layer based field effect transistors. The non-local spin valve geometry was used, employing four terminal contact geometries with ferromagnetic cobalt electrodes, which make contact to the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals which reflect the magnetization direction of all 4 electrodes, indicating that spin coherence extends underneath all 4 contacts. No significant changes in the spin signals occur between 4.2K, 77K and room temperature. From Hanle type spin precession measurements we extract a spin relaxation length between 1.5 and 2 micron at room temperature, only weakly dependent on charge density, which is varied from n~0 at the Dirac neutrality point to n = 3.6 10^16/m^2. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around 10%.

0 citations0 reviewsNo code linkedOpen access