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Researcher profile

Marcos H. D. Guimarães

Marcos H. D. Guimarães contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

7 published item(s)

preprint2023arXiv

Unconventional spin Hall effects in nonmagnetic solids

Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard arrangement, applied electric field induces transverse spin current with perpendicular spin polarization. Although conventional spin Hall effects are commonly used in spin-orbit torques or spin Hall magnetoresistance experiments, the possibilities to configure electronic devices according to specific needs are quite limited. Here, we investigate unconventional spin Hall effects that have the same origin as conventional ones, but manifest only in low-symmetry crystals where spin polarization, spin current and charge current are not enforced to be orthogonal. Based on the symmetry analysis for all 230 space groups, we have identified crystal structures that could exhibit unusual configurations of charge-to-spin conversion. The most relevant geometries have been explored in more detail; in particular, we have analyzed the collinear components yielding transverse charge and spin current with spin polarization parallel to one of them, as well as the longitudinal ones, where charge and spin currents are parallel. In addition, we have demonstrated that unconventional spin Hall effect can be induced by controllable breaking the crystal symmetries by an external electric field, which opens a perspective for external tuning of spin injection and detection by electric fields. The results have been confirmed by density functional theory calculations performed for various materials relevant for spintronics. We are convinced that our findings will stimulate further computational and experimental studies of unconventional spin Hall effects.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Anisotropic Laser-Pulse-Induced Magnetization Dynamics in van der Waals Magnet Fe$_3$GeTe$_2$

Femtosecond laser-pulse excitation provides an energy efficient and fast way to control magnetization at the nanoscale, providing great potential for ultrafast next-generation data manipulation and nonvolatile storage devices. Ferromagnetic van der Waals materials have garnered much attention over the past few years due to their low dimensionality, excellent magnetic properties, and large response to external stimuli. Nonetheless, their behaviour upon fs laser-pulse excitation remains largely unexplored. Here, we investigate the ultrafast magnetization dynamics of a thin flake of Fe$_3$GeTe$_2$ (FGT) and extract its intrinsic magnetic properties using a microscopic framework. We find that our data is well described by our modelling, with FGT undergoing a slow two-step demagnetization, and we experimentally extract the spin-relaxation timescale as a function of temperature, magnetic field and excitation fluence. Our observations indicate a large spin-flip probability in agreement with a theoretically expected large spin-orbit coupling, as well as a weak interlayer exchange coupling. The spin-flip probability is found to increase when the magnetization is pulled away from its quantization axis, opening doors to an external control over the spins in this material. Our results provide a deeper understanding of the dynamics van der Waals materials upon fs laser-pulse excitation, paving the way towards two-dimensional materials-based ultrafast spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we provide simple symmetry arguments in a group-theory approach to unveil the symmetry-allowed spin scattering mechanisms, and indicate how one can use these concepts towards an external control of the spin lifetime. We perform this analysis for both monolayer (inversion asymmetric) and bilayer (inversion symmetric) crystals, indicating the different mechanisms that play a role in these systems. We show that, in monolayer TMDs, electrons and holes transform fundamentally differently -- leading to distinct spin-scattering processes. We find that one of the electronic states in the conduction band is partially protected by time-reversal symmetry, indicating a longer spin lifetime for that state. In bilayer and bulk TMDs, a hidden spin-polarization can exist within each layer despite the presence of global inversion symmetry. We show that this feature enables control of the interlayer spin-flipping scattering processes via an out-of-plane electric field, providing a mechanism for electrical control of the spin lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Transfer of Large-Scale Two-Dimensional Semiconductors: Challenges and Developments

Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of particular technological interest are 2D semiconductors, of which the family of materials known as the group-VI transition metal dichalcogenides (TMDs) has attracted much attention. The presence of a bandgap allows for the fabrication of high on-off ratio transistors and optoelectronic devices, as well as valley/spin polarized transport. The technique of chemical vapour deposition (CVD) has produced high-quality and contiguous wafer-scale 2D films, however, they often need to be transferred to arbitrary substrates for further investigation. In this Review, the various transfer techniques developed for transferring 2D films will be outlined and compared, with particular emphasis given to CVD-grown TMDs. Each technique suffers undesirable process-related drawbacks such as bubbles, residue or wrinkles, which can degrade device performance by for instance reducing electron mobility. This Review aims to address these problems and provide a systematic overview of key methods to characterize and improve the quality of the transferred films and heterostructures. With the maturing technological status of CVD-grown 2D materials, a robust transfer toolbox is vital.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large interfacial spin-orbit torques in layered antiferromagnetic insulator NiPS$_3$/ferromagnet bilayers

Finding efficient ways of manipulating magnetic bits is one of the core goals in spintronic research. Electrically-generated spin-orbit torques (SOTs) are good candidates for this and the search for materials capable of generating highly-efficient SOTs has gained a lot of traction in the recent years. While antiferromagnet/ferromagnet bilayer structures have been employed extensively for passive applications, e.g. by using exchange bias fields, their active properties are not yet widely employed. Here we show the presence of large interfacial SOTs in bilayer of a ferromagnet and the two-dimensional layered antiferromagnetic insulator NiPS$_3$. We observe a large in-plane damping-like interfacial torque, showing a torque conductivity of $σ_\mathrm{DL} \approx 1 \times 10^{5} \mathrm{(\frac{\hbar}{2e}) /(Ωm)}$ even at room temperature, comparable to the best devices reported in the literature for standard heavy-metal-based and topological insulators-based devices. Additionally, our devices also show an out-of-plane field-like torque arising from the NiPS$_3$/ferromagnet interface, further indicating the presence of an interfacial spin-orbit coupling in our structures. Temperature-dependent measurements reveal an increase of the SOTs with a decreasing temperature below the Néel temperature of NiPS$_3$ ($T_N \approx 170 \mathrm{K}$), pointing to a possible effect of the magnetic ordering on our measured SOTs. Our findings show the potential of antiferromagnetic insulators and two-dimensional materials for future spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin caloritronics in a CrBr$_3$-based magnetic van der Waals heterostructure

The recently reported magnetic ordering in insulating two-dimensional (2D) materials, such as chromium triiodide (CrI$_3$) and chromium tribromide (CrBr$_3$), opens new possibilities for the fabrication of magneto-electronic devices based on 2D systems. Inevitably, the magnetization and spin dynamics in 2D magnets are strongly linked to Joule heating. Therefore, understanding the coupling between spin, charge and heat, i.e. spin caloritronic effects, is crucial. However, spin caloritronics in 2D ferromagnets remains mostly unexplored, due to their instability in air. Here we develop a fabrication method that integrates spin-active contacts with 2D magnets through hBN encapsulation, allowing us to explore the spin caloritronic effects in these materials. The angular dependence of the thermal spin signal of the CrBr$_3$/Pt system is studied, for different conditions of magnetic field and heating current. We highlight the presence of a significant magnetic proximity effect from CrBr$_3$ on Pt revealed by an anomalous Nernst effect in Pt, and suggest the contribution of the spin Seebeck effect from CrBr$_3$. These results pave the way for future magnonic devices using air-sensitive 2D magnetic insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantized conductance of a suspended graphene nanoconstriction

A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental verification and/or discovery of many new quantum mechanical effects in this field. Examples are effects due to specific graphene edges, such as spin polarization at zigzag edges of a graphene nanoribbon and the use of the valley degree of freedom in the field of graphene valleytronics8. As a first step in this direction we present the observation of quantized conductance at integer multiples of 2e^2/h at zero magnetic field and 4.2 K temperature in a high mobility suspended graphene ballistic nanoconstriction. This quantization evolves into the typical quantum Hall effect for graphene at magnetic fields above 60mT. Voltage bias spectroscopy reveals an energy spacing of 8 meV between the first two subbands. A pronounced feature at 0.6 2e^2/h present at a magnetic field as low as ~0.2T resembles the "0.7 anomaly" observed in quantum point contacts in a GaAs-AlGaAs two dimensional electron gas, having a possible origin in electron-electron interactions.

0 citations0 reviewsNo code linkedOpen access