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Zitong Zhang

Zitong Zhang contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Elucidating Representation Degradation Problem in Diffusion Model Training

Diffusion models have achieved remarkable success, yet their training remains inefficient due to a severe optimization bottleneck, which we term Representation Degradation. As noise levels increase, the outputs of the trained model exhibit progressive structural distortion, which can destabilize training and impair generation quality. Our analysis suggests that this instability is driven by mismatched target recoverability, which is associated with Neural Tangent Kernel (NTK) spectral weakening and effective low-rank behavior. To address this, we propose Elucidated Representation Diffusion (ERD), a plug-and-play framework that dynamically reallocates optimization effort according to effective recoverability. By stabilizing representation learning without external supervision, ERD accelerates convergence and achieves strong empirical performance across diffusion backbones.

preprint2021arXiv

Observation of Aharonov-Bohm effect in PbTe nanowire networks

We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence length $\sim$ 8 - 12 $μ$m at 50 mK. This length scale is larger than the typical geometry of PbTe-based hybrid semiconductor-superconductor nanowire devices.

preprint2020arXiv

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.