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Runan Shang

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Published work

8 published item(s)

preprint2021arXiv

Observation of Aharonov-Bohm effect in PbTe nanowire networks

We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence length $\sim$ 8 - 12 $μ$m at 50 mK. This length scale is larger than the typical geometry of PbTe-based hybrid semiconductor-superconductor nanowire devices.

preprint2021arXiv

Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate

Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological qubits and braiding operations requires scalable and disorder-free nanowire networks. Selective area growth of in-plane InAs and InSb nanowires, together with shadow-wall growth of superconductor structures, have demonstrated this scalability by achieving various network structures. However, the noticeable lattice mismatch at the nanowire-substrate interface, acting as a disorder source, imposes a serious obstacle along with this roadmap. Here, combining selective area and shadow-wall growth, we demonstrate the fabrication of PbTe-Pb hybrid nanowires - another potentially promising Majorana system - on a nearly perfectly lattice-matched substrate CdTe, all done in one molecular beam epitaxy chamber. Transmission electron microscopy shows the single-crystal nature of the PbTe nanowire and its atomically sharp and clean interfaces to the CdTe substrate and the Pb overlayer, without noticeable inter-diffusion or strain. The nearly ideal interface condition, together with the strong screening of charge impurities due to the large dielectric constant of PbTe, hold promise towards a clean nanowire system to study Majorana zero modes and topological quantum computing.

preprint2020arXiv

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.

preprint2013arXiv

Observation of Kondo Effect in a Quadruple Quantum Dots

We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number of peaks exceeds five. Alternatively, tuning the lower DQDs yielded regions of four peaks. In addition, a Kondo-effect switcher is demonstrated, using the lower DQDs as the controller.

preprint2013arXiv

Photon-assisted-tunneling in a coupled double quantum dot out of thermal equilibrium

We perform photon-assisted-tunneling (PAT) experiments on a GaAs double quantum dot device under high microwave excitation power. Photon-assisted absorption of up to 14 photons is observed, when electron temperature (>1K) are far above the lattice temperature. Signatures of Landau-Zener-Stückelberg (LZS) interference are found even in this non-equilibrium PAT spectrum. In addition, the charge state relaxation time T_1~8ns measured in this out of thermal equilibrium double quantum dot is in agreement with other previous reports.

preprint2011arXiv

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

In a single quantum dot (QD), the electrons were driven out of thermal equilibrium by the back-action from a nearby quantum point contact (QPC). We found the driving to energy excited states can be probed with the random telegraph signal (RTS) statistics, when the excited states relax slowly compared with RTS tunneling rate. We studied the last few electrons, and found back-action driven spin singlet-triplet (S-T) excitation for and only for all the even number of electrons. We developed a phenomenological model to quantitatively characterize the spin S-T excitation rate, which enabled us to evaluate the influence of back-action on spin S-T based qubit operations.

preprint2011arXiv

Back-action Induced Non-equilibrium Effect in Electron Charge Counting Statistics

We report our study of the real-time charge counting statistics measured by a quantum point contact (QPC) coupled to a single quantum dot (QD) under different back-action strength. By tuning the QD-QPC coupling or QPC bias, we controlled the QPC back-action which drives the QD electrons out of thermal equilibrium. The random telegraph signal (RTS) statistics showed strong and tunable non-thermal-equilibrium saturation effect, which can be quantitatively characterized as a back-action induced tunneling out rate. We found that the QD-QPC coupling and QPC bias voltage played different roles on the back-action strength and cut-off energy.

preprint2011arXiv

Electron Spin Excited States Spectroscopy in a Quantum Dot Probed by QPC Back-action

The quantum point contact (QPC) back-action has been found to cause non-thermal-equilibrium excitations to the electron spin states in a quantum dot (QD). Here we use back-action as an excitation source to probe the spin excited states spectroscopy for both the odd and even electron numbers under a varying parallel magnetic field. For a single electron, we observed the Zeeman splitting. For two electrons, we observed the splitting of the spin triplet states $|T^{+}>$ and $|T^{0}>$ and found that back-action drives the singlet state $|S>$ overwhelmingly to $|T^{+}>$ other than $|T^{0}>$. All these information were revealed through the real-time charge counting statistics.