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Ziming Zhu

Ziming Zhu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Bayesian Optimisation-Assisted Neural Network Training Technique for Radio Localisation

Radio signal-based (indoor) localisation technique is important for IoT applications such as smart factory and warehouse. Through machine learning, especially neural networks methods, more accurate mapping from signal features to target positions can be achieved. However, different radio protocols, such as WiFi, Bluetooth, etc., have different features in the transmitted signals that can be exploited for localisation purposes. Also, neural networks methods often rely on carefully configured models and extensive training processes to obtain satisfactory performance in individual localisation scenarios. The above poses a major challenge in the process of determining neural network model structure, or hyperparameters, as well as the selection of training features from the available data. This paper proposes a neural network model hyperparameter tuning and training method based on Bayesian optimisation. Adaptive selection of model hyperparameters and training features can be realised with minimal need for manual model training design. With the proposed technique, the training process is optimised in a more automatic and efficient way, enhancing the applicability of neural networks in localisation.

preprint2020arXiv

First-principles study on the bulk and two-dimensional structures of AMnBi(A =K, Rb, Cs)-family materials

Magnetic materials with high mobilities are intriguing subject of research from both fundamental and application perspectives. Based on first-principle calculations, we investigate the physical properties of the already synthesized AMnBi(A =K, Rb, Cs)-family materials. We show that these materials are antiferromagnetic (AFM), with Neel temperatures above 300 K. They contain AFM ordered Mn layers, while the interlayer coupling changes from ferromagnetic (FM) for KMnBi to AFM for RbMnBi and CsMnBi. We find that these materials are narrow gap semiconductors. Owing to the small effective mass, the electron carrier mobility can be very high, reaching up to 100,000 cm2/(Vs) for KMnBi. In contrast, the hole mobility is much suppressed, typically lower by two orders of magnitude. We further study their two-dimensional (2D) single layer structures, which are found be AFM with fairly high mobility (1000 cm2/(Vs)). Their Neel temperatures can still reach room temperature. Interesting, we find that the magnetic phase transition is also accompanied by a metal-insulator phase transition, with the paramagnetic metal phase possessing a pair of nonsymmorphic-symmetry-protected 2D spin-orbit Dirac points. Furthermore, the magnetism can be effectively controlled by the applied strain. When the magnetic ordering is turned into FM, the system can become a quantum anomalous Hall insulator with gapless chiral edge states.