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Zhiguo Liu

Zhiguo Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other physics.optics

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preprint2020arXiv

Quasi-parallel X-ray microbeam obtained using a parabolic monocapillary X-ray lens with an embedded square-shaped lead occluder

A parabolic monocapillary X-ray lens (PMXRL) is designed to effectively constrain a laboratory point X-ray source into a parallel beam. A square-shaped lead occluder (SSLO) is used to block direct X-rays in the PMXRL. To design the PMXRL, we use Python to simulate the conic parameter (p = 0.001 mm) of the lens and then use a drawing machine to draw a corresponding lens (p = 0.000939 mm) with a total length of 60.8 mm. We place the SSLO at the lens inlet for optical testing. The results show that the controlled outgoing beam has a divergence of less than 0.4 mrad in the range of 15-45 mm of the lens outlet, which achieves excellent optical performance in X-ray imaging methodology. The design details are reported in this paper.

preprint2010arXiv

Robust Dirac Point in Honeycomb Structure Nanoribbons with Zigzag Edges

The zigzag edge graphene nanoribbon, which is an antiferromagnetic insulator, is found from the density-function theory calculation to display a robust Dirac point after N and B doping at the zigzag edge. More interestingly, we found that the robust Dirac point is a common feature of the honeycomb structure nanoribbon with appropriate edge sites. The zigzag edge honeycomb nanoribbon is therefore expected to provide a very useful platform for material design and development.

preprint2009arXiv

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching behaviors in amorphous LaLuO3 make it suited for not only logic but memory applications using the conventional semiconductor or the emerging nano/CMOS architectures. The conduction transition between high- and low- resistance states is attributed to the change in the separation between oxygen vacancy sites in the light of the correlated barrier hopping theory. The mean migration distances of vacancies responsible for the resistive switching are demonstrated in nanoscale, which could account for the ultrafast programming speed of 6 ns. The origin of the distributions in switching parameters in oxides can be well understood according to the switching principle. Furthermore, an approach has also been developed to make the operation voltages predictable for the practical applications of resistive memories.