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Jiang Yin

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2014arXiv

Tunable Magnetic Semiconductor Behavior Driven by Half-Filled One Dimensional Band in Zigzag Phosphorene Nanoribbons

An antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from a comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them great potential for the applications in nanoelectronic devices.

preprint2010arXiv

Robust Dirac Point in Honeycomb Structure Nanoribbons with Zigzag Edges

The zigzag edge graphene nanoribbon, which is an antiferromagnetic insulator, is found from the density-function theory calculation to display a robust Dirac point after N and B doping at the zigzag edge. More interestingly, we found that the robust Dirac point is a common feature of the honeycomb structure nanoribbon with appropriate edge sites. The zigzag edge honeycomb nanoribbon is therefore expected to provide a very useful platform for material design and development.

preprint2009arXiv

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching behaviors in amorphous LaLuO3 make it suited for not only logic but memory applications using the conventional semiconductor or the emerging nano/CMOS architectures. The conduction transition between high- and low- resistance states is attributed to the change in the separation between oxygen vacancy sites in the light of the correlated barrier hopping theory. The mean migration distances of vacancies responsible for the resistive switching are demonstrated in nanoscale, which could account for the ultrafast programming speed of 6 ns. The origin of the distributions in switching parameters in oxides can be well understood according to the switching principle. Furthermore, an approach has also been developed to make the operation voltages predictable for the practical applications of resistive memories.